• Title/Summary/Keyword: Vacuum Glass

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Discharge Characteristics of Xe Plasma Flat Lamp for LCD Backlight According to Operating Voltage Pulse (LCD 백라이트용 Xe계 플라즈마 평판 램프의 구동 전압 Pulse의 조건에 따른 방전 특성 연구)

  • Kwon, Eun-Mi;Kim, Hyuk-Hwan;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.271-278
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    • 2003
  • Conventional backlight for liquid crystal display (LCD) uses mercury which leads to environmental pollution. In this study, characteristics of AC coplanar type mercury-free plasma flat lamp have been studied. Pollution-free Xe-He is adopted as a discharge gas system. Since the Xe gas has a lower efficiency in generating vacuum ultraviolet (VUV) than mercury, the improvement of luminance and luminous efficiency in the Xe gas system is very important. The electrode, dielectric, and phosphor layers constituting lamp are formed on the bottom glass by the screen printing method. The effects of pulse shape, on-time, and pulse frequency on the luminance and luminous efficiency have been examined. For Xe(5%)-He gas, the lamp exhibits higher efficiency with sharper pulse shape, higher peak voltage, and shorter pulse on-time (up to 2 $\mu\textrm{s}$). Higher efficiency and lower consumption of power were obtained at 30 kHz than at 60 kHz. The collision of ion to bottom electrodes is a dominant factor to raise the lamp temperature. Therefore the high voltage and low current discharge system is necessary for reduction of the lamp temperature as well as for enhancement of the luminous efficiency.

Effect of Rapid thermal treated CdS Films prepared by CBD (CBD법으로 성장된 CdS 박막의 급속 열처리 효과)

  • Park, Seung-Beom;Song, Woo-Chang;Lim, Dong-Gun;Yang, Kea-Joon;Shim, Nak-Soon;Lee, Sang-Kyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.227-227
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    • 2008
  • CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. The as-deposited films are annealed in Rapid Thermal Annealing (RTA) system in various atmosphere(Air, Vacuum and $N_2$) at $500^{\circ}C$. In this work, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) of chemical bath deposited (CBD) CdS films on glass is carried out. In case of the annealed CdS films in $N_2$, grain size was larger than as-annealed films.

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A 0.55" PDLC-LCoS Micro-display for Mobile Projectors

  • Do, Yun-Seon;Yang, Kee-Jeong;Sung, Shi-Joon;Kim, Jung-Ho;Lee, Gwang-Jun;Lee, Yong-Hwan;Chung, Hoon-Ju;Roh, Chang-Gu;Choi, Byeong-Dae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1527-1530
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    • 2009
  • A LCoS micro-display using polymer dispersed liquid crystals (PDLCs) for light switching layer was fabricated. The Si backplane of SVGA ($800{\times}600$) with a pixel size of $14{\times}14mm^2$ was prepared by a $0.35{\mu}m$ 18V CMOS process. PDLCs were filled in the gap between backplane and ITO glass by conventional vacuum filling method. The prepared panels were driven by a field sequential color (FSC) scheme at the frequency of 180Hz and were successful in modulating LED lights to show projection images. The preparation and performance of PDLC-LCoS are presented.

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Fabrication and Characterization of Red Emitting OLEDs using the Alg3:Rubrene-GDI4234 Phosphor System (Alg3:Rubrene-GDI4234 형광 시스템을 이용한 적색 OLED의 제작과 특성 평가)

  • Jang Ji-Geun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.5
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    • pp.437-441
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    • 2006
  • The red emitting OLEDs using $Alq_3$:Rubrene-GDI4234 phosphors have been fabricated and characterized . In the device fabrication, 2- TNATA [4,4',4' - tris (2- naphthylphenyl - phenylamino ) - tripheny lamine] as the hole injection material and NPB [N,N'-bis (1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as the hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum evaporation. And then, red color emissive layer was deposited using $Alq_3$ as the host material and Rubrene(5,6,11,12-tetraphenylnaphthacene)-GDI4234 as the dopants. finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:Rubrene-GDI4234/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Red OLEDs fabricated in our experiments showed the color coordinate of CIE(0.65, 0.35) and the maximum power efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

Preparation of$Ni_xFe_{3-x}O_4$ Films by the Ferrite Plating and Their Magnetic Properties (페라이트 도금법에 의한 $Ni_xFe_{3-x}O_4$ 박막의 제조와 자기적 성질)

  • 하태욱;이정식;김일원
    • Journal of the Korean Magnetics Society
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    • v.8 no.5
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    • pp.295-299
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    • 1998
  • The magnetic thin films can be prepared without vacuum process and under the low temperature(<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Ni_xFe_{3-x}O_4$ (x=0.162~0.138) films on cover glass at the substrate temperature 80 $^{\circ}C$ and pH range of the oxidizing solution, 7.1~8.8. the crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The deposition rate and the grain size of the film increased with the pH of oxidizing solution. The coercive force (H_C)$ decreased with the pH of oxidizing solution.

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Uniaxial Magnetic Anistotropy of a NiO-Spin Valve Device

  • Lee, Won-Hyung;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of Magnetics
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    • v.14 no.1
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    • pp.18-22
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    • 2009
  • The shape anisotropy effect of a giant magnetoresistance-spin valves (GMR-SV) device with a glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe layered structure for use in the detection of magnetic property of molecules within a cell was investigated. The patterned device was given uniaxial anisotropy during the sputtering deposition and vacuum post-annealing, which was performed at $200^{\circ}C$ under a 300 Oe magnetic field. The pattern size of the device, which was prepared through the photolithography process, was $2{\times}15\;{\mu}m^2$. The experimental results confirmed that the best design for a GMR-SV device to be used as a biosensor is to have both the axis sensing current and the easy axis of the pinned NiO/NiFe/CoFe triple layer oriented in the direction of the device's width, while the easy axis of the free CoFe/NiFe bilayer should be pointed along the long axis of the device.

Magnetic Properties and the Order-disorder Phase Transformation of (Fe1-XCoX) Pt Magnetic Thin Films

  • Na, K.H.;Park, C.H.;Na, J.G.;Jang, P.W.;Kim, C.S.;Lee, S.R.
    • Journal of Magnetics
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    • v.4 no.4
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    • pp.119-122
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    • 1999
  • Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

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Characterization of Al Doped ZnO Thin Films Prepared by RF Magnetron Sputtering Under Various Substrate Temperatures

  • Kim, Deok Kyu;Kim, Hong Bae
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.279-283
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    • 2014
  • Al doped ZnO thin films have been deposited by a RF magnetron sputtering technique from a ZnO (2 wt.% $Al_2O_3$) target onto glass substrates heated at temperature ranging from RT to $400^{\circ}C$. X-ray diffraction analysis shows that the deposits have a preferential growth along the c-axis of a hexagonal structure. The full with at half maximum decreases from 0.45 to $0.43^{\circ}$ in the studied temperature range. The root main square surface roughness increases with substrate temperature from 1.89 to 2.67 nm. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is red-shifted with substrate temperature from RT to $400^{\circ}C$. The sheet resistance increases from 92 ohm/sq to 419 ohm/sq when the deposition temperature increases from RT to $400^{\circ}C$. The increment of sheet resistance is caused by lowered carrier concentration resulting from an increase in surface roughness.

Preparation of BaTiO3/Poly(vinylidene fluoride) 0-3 Composite Films for Dielectric Applications

  • Hwang, Kyu-Seog;Kang, Jong-Min;Lee, June-Ho;Hwangbo, Seung
    • Journal of Electrical Engineering and Technology
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    • v.13 no.4
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    • pp.1692-1696
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    • 2018
  • Ferroelectric $BaTiO_3$/poly(vinylidene fluoride) (PVDF) nanocomposite films were successfully prepared by mixing $BaTiO_3$ nano-particles into PVDF solution dissolved in dimethylformamide under ultrasonification. The mixture was casted onto glass petri dish and then annealed at $100^{\circ}C$ for 12 h in vacuum dry oven. Crystal structure and surface morphology of the samples were analyzed by using an X-ray diffraction analysis and a field emission-scanning electron microscope, respectively. The relative dielectric permittivity and loss tangent were determined in the frequency range of 50 Hz to 1 MHz. For the $BaTiO_3/PVDF$ nanocomposites, the entire diffraction peaks match those indicated by standard $BaTiO_3$ perovskite structure. The FE-SEM image reveals the homogeneity of the $BaTiO_3$ nanopowder distribution and also predominant 0-3 connectivity. All results show that the dielectric properties of the nanocomposite films are desirable and the fabrication technique for preparing the $BaTiO_3/PVDF$ nanocomposites has a potential in the electronic applications.

Preparation of Bucky Paper using Single-walled Carbon Nanotubes Purified through Surface Functionalization and Investigation of Their Field Emission Characteristics (기능화에 의한 단일벽 탄소나노튜브 정제 및 페이퍼 제조와 전계방출 특성 연구)

  • Goak, Jeung-Choon;Lee, Seung-Hwan;Lee, Han-Sung;Lee, Nae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.402-410
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    • 2008
  • Single-walled carbon nanotubes (SWCNTs) were currently produced together with some contaminants such as a metallic catalyst, amorphous carbon, and graphitic nanoparticles, which should be sometimes purified for their applications. This study aimed to develop efficient, scalable purification processes but less harmful to SWCNTs. We designed three-step purification processes: acidic treatment, surface functionalization and soxhlet extraction, and heat treatment. During the soxhlet extraction using tetrahydrofuran, specifically, carbon impurities could be easily expelled through a glass thimble filter without any significant loss of CNTs. Finally, SWCNTs were left as a bulky paper on the filter through membrane filtration. Vertically aligned SWCNTs on one side of bulky paper were well developed in a speparation from the filter paper, which were formed by being sucked through the filter pores during the pressurized filtration. The bucky paper showed a very high peak current density of field emission up to $200\;mA/cm^2$ and uniform field emission images on phosphor, which seems very promising to be applied to vacuum microelectronics such as microwave power amplifiers and x-ray sources.