• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3290-3294
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• 2011

The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.7-12
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• 2003

When the wind turbine is used in cold regions, the mechanical properties and dimension stability of the blade will be changed. The proposal of this paper is to test the durability of the blade for wind turbine. It is necessary to select the most comfortable materials and fabrication processes for more stable wind turbine blade in cold regions. To select the most comfortable materials and processes, the static strength has to know through the tensile static tests at the severe condition as cold regions. First, the tensile static specimens made by RIM (Resin injection molding) process & vacuum bagging process with reinforcement materials and resin. Tensile static tests were carried out on three laminate lay-ups (carbon prepreg, carbon fiber dry fabric and glass fiber dry fabric) at different test temperature($24^{\circ}$, $-30^{\circ}$), determining properties such as the mechanical strength, stiffness and strain to failure. At different test temperature, in order to test the tensile strengths of these specimens used the low temperature chamber. Next, the results of this test were compared with each other. Finally, the most comfortable materials and fabrication processes can select based on these results. The results show the changes in the static behavior of three laminate lay-ups at different test temperatures. At low temperatures, the static strengths are higher than the ones at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.168-168
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• 1999

Recently, Fe/Si multilayered films (MLF) have been a focus of interest due to the strong antiferromagnetic (AF) coupling observed in such kind of MLF originates from the same nature as in the metal/metal MLF. In particular, a question of whether the spacer layer in the Fe/Si MLF is metallic or semiconducting is of interest. In spite of various experimental techniques envolved in the study, the chemical composition and the properties of the interfacial regions in the MLF exhibiting the AF coupling is still questionable. The nature of the AF coupling and the interfacial properties of Fe/Si MLF are investigated in this study. A series of Fe/Si MLF with a fixed nominal thickness of Fe(3nm) and a variable thickness of Sk(1.0-2.2nm) were deposited by RF-sputtering onto glass substrates at room temperature. The atomic structures and the actual sublayer thicknesses of the Fe/Si MLF are investigated by using x-ray diffraction. The magnetic-field dependence of the equatorial Kerr effect clearly shows an appearance of the AF coupling between Fe sublayers at tsi = 1.5 - 1.8 nm. the drastic discrepancies between the experimental magnetooptical (MO) and optical properties, and based on the assumption of sharp interfaces between Fe and Si sublayers leads to a conclusion that pure si is absent in the AF-coupled Fe/Si MLF. Introducing in the model nonmagnetic semiconducting FeSi alloy layers between Fe and Si sublayers or as spacer between pure Fe sublayers only slightly improves the agreement between model and experiment. A reasonable agreement between experimental and simulated MO spectra was reached with using the fitted optical properties for the spacer with a typical metallic type of behavior. The results of the magnetic properties measured by vibrating sample magnetometer and magnetic circular dichroism are also analyzed in connection with the MO and optical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.228-228
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• 2010

pin-형 비정질 실리콘 태양전지에서 p-층은 창물질로서 전기 전도도가 크고, 빛 흡수가 작어야 한다. p층의 두께가 얇으면 i층에서 충분한 내부전위를 얻을 수 없어 개방전압이 작아진다. 반대로 p-층 두께가 두꺼워지면 p-층 자체에서 빛 흡수가 증가하고, 높은 불순물 농도(> $10^{20}/cm^3$)에 의한 표면재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 만들면 짧은 파장의 입사광이 직접 i-층을 비추므로 단락전류와 곡선인자를 증가시킬 수 있다. 본 실험에서는 비정질 실리콘 증착과 박막 특성 분석을 위하여, $5cm{\times}5cm$ 크기의 eagle 2000 glass(유리)와 p형 실리콘 wafer가 사용되었다. 투과도, 흡수도, Raman, 암전도도 와 광전도도 특성 측정에 유리 기판에 증착된 박막을, 두께 측정, FTIR 측정에는 실리콘 기판에 증착된 박막이 각각 사용되었다. p형 비정질 실리콘 증착에는 $SiH_4$, $H_2$, $B_2H_6$ 가스를 사용하였고, 플라즈마 형성에는 13.56MHz의 RF 소스가 사용하였다.p층은 $SiH_4$ 가스와 $H_2$ 가스비가 1:5인 조건에서 $B_2H_6$을 도핑하여 형성하였다. $B_2H_6$가스량을 변화시키며 형성하였으며, $B_2H_6$가스량이 증가함에 따라 암전도도가 증가하였으나, 광학적 밴드갭이 감소하였다. $H_2/SiH_4$ 가스 비가 0.001일 때 밴드갭은 1.76으로 i층보다 높게 형성되었으며, 암전도도는 $10^{-7}$이었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.347.1-347.1
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• 2014

최근, 박막 트랜지스터는 빠른 동작 속도, 낮은 공정비용 그리고 저온공정 등의 특성을 필요로 하고 있다. 그 중 indium-zinc oxide (InZnO)는 높은 전기적 특성, 높은 광 투과도 그리고 우수한 안정성 때문에 기존의 반도체를 대체할 수 있을 것으로 기대된다. InZnO의 경우 indium과 zinc의 조성비에 따라 특성 변화의 차이가 크기 때문에 다양한 조성비에 대한 연구가 보고되고 있는데, 기존의 InZnO 박막을 증착하는 방법의 경우에 조성비의 변화 과정에 많은 공정상의 어려움이 있다. 이 같은 문제점 때문에 조성비의 변화를 용이하게 할 수 있는 용액공정을 이용한 연구가 진행되고 있다. 또한 용액공정은 높은 균일성, 공정 시간 및 비용 감소 그리고 대면적화가 가능한 장점을 가지고 있다. 한편, 용액공정을 기반으로 한 InZnO의 경우에 용액 상태에서 고체 상태의 순수한 금속 산화물 상태로 바꾸기 위해 post-treatment 가 필요하다. 일반적으로 furnace 열처리 방법을 사용하는데, 이 경우 낮은 열효율 및 고비용 등의 문제점을 가지고 있다. 특히 glass 또는 flexible 기판의 경우 열처리 온도에 대한 제약이 있다. 이러한 문제를 해결하기 위한 방법으로 최근에 microwave irradiation를 이용한 저온 post-treatment 방법이 보고되고 있다. Microwave irradiation는 짧은 공정시간 및 열 균일성 등의 장점이 있다. 따라서 본 연구에서는 다양한 indium과 zinc의 조성비를 갖는 용액을 제작한 후 spin coating을 이용하여 증착한 InZnO 기반의 박막 트랜지스터를 제작하였다. Furnace와 microwave 방식으로 post-treatment 하여 비교 평가한 결과 microwave irradiation 한 경우 furnace 열처리 한 경우 보다 더 안정된 동작 전압을 가지는 것으로 나타났다. 따라서 저온공정이 가능한 microwave irradiation 방법으로 post-treatment 한다면 차세대 산화물 반도체로서의 적용이 가능할 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.279.1-279.1
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• 2014

글래스(glass), 폴리머 또는 쿼츠와 같은 투명기판은 렌즈, 디스플레이, 광검출기, 광센서, 발광다이오드 및 태양전지와 같은 광 및 광전소자 분야에서 널리 사용되고 있다. 이러한 소자들의 경우, 광추출 또는 광흡수 효율을 향상시키는 것이 매우 중요하다. 그러나 투명기판의 경우, 약 1.5의 굴절율로 인해 표면에서 4% 반사가 발생되는데, 이러한 광학적 손실은 소자의 성능을 저하시키는 원인이 된다. 따라서, 글래스와 공기 경계면에서 발생되는 광손실을 줄이기 위한 효율적인 무반사 코팅이 필요하다. 최근, 우수한 내구성 뿐만 아니라, 광대역 파장 및 다방향성에서 무반사 특성을 보이는 서브파장 주기를 갖는 나노구조(subwavelength structures)의 형성 및 제작 공정에 관한 연구가 보고되고 있다. 이러한 나노구조는 경사 굴절율 분포를 가지는 유효 매질을 형성하기 때문에 투명기판 표면에서의 Fresnel 반사로 인한 광손실을 줄일 수 있다. 또한, 무반사 서브파장구조를 형성하기 위한 패터닝 방법으로, 간단/저렴하고 대면적 제작이 용이한 열적 응집 공정을 이용한 자가정렬된 금속 나노입자 형성 기술이 널리 사용되고 있다. 따라서 본 실험에서는 열적 응집현상에 의해 형성된 비주기적 금 나노입자 식각 마스크 패턴 및 유도결합 플라즈마 장비를 이용하여 글래스 기판 위에 무반사 서브파장 나노구조를 제작하였다. 금 나노패턴 및 제작된 글래스 서브파장 나노구조의 식각 프로파일은 주사전자현미경을 사용하여 관찰하였으며, UV-Vis-NIR 스펙트로미터를 사용하여 빛의 투과율을 측정하였다. 또한, 제작된 샘플들에 대해서, 표면 접촉각 측정 장비를 이용하여 표면 wettability를 조사하였다.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.316-316
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• 2010

Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.