• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Resources Recycling
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• v.5 no.3
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• pp.56-64
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• 1996

C,H,OH system is widely used for producing synthetic beverages and pharmaceuticals. Calcium hydroxide suspension was used to callhol the morphology of calcium carbonate, and the charactenstics of the formahan and crystsllizatian of calcium cilrbonate by adding ethylenc glycol were determined A reaclor was made with attaching a ceramic bubble plate, and lhe eleclrical conductivity was continously monitored during the rcaction with CO, gas. A part of the suspension was separated and powdered at the transition point. XRD and electron microscopic observation showed that the intermedmte and final products were vilterite, ;~r;lganite and calcite. In this study, the volumc of the ethylene glycol added to CH,OH was fixed a1 10 vol\ulcornerh. The valumc of the suspension was 500 ml, and the changes oi characteristics were shdied along with variims cnntents(l0-50 g) of calcium hydroxide. Except m the case of 10 g of calcium hydroxide at the crystallization stagc, all of products showed gelation. Tne marc the calcium hydroxide the shorter the formation time. Alsa. the farmalion of spherical valcrile ivas obsemcd when 30 g Ca(OH), was added. Tne vaterite(a compound material) can bc synthesised under alnbienl pressure and lempcmhre m a C,H,OH system by morphology control. Even though the vateritc was meta-stable phasc and could bc changed to calcitc easily, the stable and spherical vateritc was observed by using G5 glass fillers and vacuum dricrs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.1-5
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• 2003

The multi-layered OELDs(organic electroluminescent devices) were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The $Alq_3$ (tris-(8-hydroxyquinoline)aluminum) low molecule compound was used as the light emission layer. TPD(triphenyl-diamine) and $\alpha-NPD$ were used as the hole transport layer. CuPc (Copper phthalocyanine) was also used as the hole injection layers. In addition, QD2 (quinacridone2) organic material with $10\AA$ thickness was deposited in the $Alq_3$ emission layer to improve the luminance efficiency. The threshold voltage was about 7V for all devices. The luminance and efficiency of devices was improved by substitution the $\alpha-NPD$ for TPD as the hole as the hole transport layer. The luminance efficiency of the OELD sample with QD2 thin film in the $Alq_3$ emission layer was found to be 1.55 lm/W, which is about 8 times larger value compared to the sample without QD2 thin layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.27-32
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• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.12
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• pp.1591-1597
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• 2012

Adherend samples were made from unsaturated polyester and woven and mat glass fibers by the hand layup and vacuum methods. The mechanical properties of the adhesive, composite adherends, and terminal-joint and secondary-joint specimens were determined experimentally. Combinations of the experiment results and the bonding theory were used in this study. The maximum and average shear stresses were calculated based on the maximum tensile force and geometry parameters of the joint specimens. The results of the maximum and average shear stresses were compared and evaluated for six joints. The results showed that the grinding and grind/acetone joint had the highest strength among three types of terminal-joints. Similarly, the mat-mat and mat-woven joints had the highest strength among three types of secondary-joints with the same value. Conversely, no treatment and woven-woven bonding had very low strength. In each case, failure occurred always at two ends and then moved toward the middle area of the overlap length.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.71-75
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• 2006

The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm.