• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.298-305
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• 2013

Uniform silica nanobeads were synthesized by St$\ddot{o}$ber method and assembled in the form of monolayer on glass substrate using sonication method. Before the assembly of silica nanobeads, glass substrates were treated with molecular linkers, such as CP-TMS and PEI, and nanobeads were dispersed in toluene. In attachment test, SO (sonication without stacking) method and SS (sonnication with stacking) method was used and sonication time was controled. After the experiment, microbalance was use to measure deviation between before and after the attachment experiment then calculate percent of coverage. Minutely observe with SEM (Scanning Electron Microscopy) then select the most close-packed and monolayer assembled cover glass and calculate DOC (Degree of Coverage). In SO method, DOC increased very sharply and reach over 140 percent point, also got lots of multi-layer region. On the other hand, in SS method DOC increased slower than SO method but more close-packed and monolayer assembled.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.569-569
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• 2013

대부분의 태양전지 공정은 퍼니스와 레이저 도핑 공정이 중요한 공정 중 하나다. 퍼니스 도핑공정의 경우 저농도 도핑영역에 선택적으로 고농도 도핑영역을 형성하기가 일반적으로 어렵다. 레이저를 사용한 선택적 도핑의 경우 고가의 레이저 장비가 요구되어지며, 레이저 도핑 후 고온의 에너지로 인한 웨이퍼의 구조적 손상 문제를 야기한다. 본 연구는 저가이면서 새로운 구조의 대기압 플라즈마 제트를 개발하였고, 이를 통한 선택적 도핑에 관한 연구를 하였다. 대기압 플라즈마 제트는 Ar 가스를 주입하여 저주파(1~100 kHz) 전원을 인가하여 플라즈마를 발생시키는 구조로 제작하였다. 웨이퍼는 P-type shallow 도핑 된(120 Ohm/square) PSG (Phosphorus Silicate Glass)가 제거되지 않은 웨이퍼를 사용하였다. 대기압 플라즈마 도핑 공정 처리시간은 15 s, 30 s, 플라즈마 발생 전류는 40 mA, 70 mA로 처리하였다. 웨이퍼의 도핑프로파일은 SIMS (Secondary Ion Mass Spectroscopy)측정을 하여 분석을 진행하였으며, 도핑 후 도핑프로파일을 통하여 면저항등 전기적 특성을 파악하였다. 도펀트인 PSG (Phosphorus Silicate Glass)에 대기압 플라즈마 제트로 도핑공정을 처리한 결과 전류가 상승함에 따라, 도핑 처리시간이 길어짐에 따라서 도핑깊이가 깊어지고, 면저항이 낮아짐을 확인하였다. 대기압 플라즈마 도핑 후 웨이퍼의 구조적 손상파악을 위한 SEM (Secondary Emission Microscopy) 측정결과 도핑 전과 후 웨이퍼의 표면구조는 차이가 없음을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.354-359
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• 2006

Recently, the interest in lithography without photo exposure has been increased compare to the conventional photolithography in nano meter and micrometer size patterning area. We studied a self aligned dipping of Ag solution through micro contact printing (${\mu}-CP$) with octadecyltrichlorosilane (OTS) treated polydimethylsiloxane (PDMS) soft mold. The OTS monolayer on the patterned PDMS was formed by dipping it into OTS solution. We transferred the OTS monolayer from PDMS mold to the glass. The OTS monolayer changed the surface energy from hydrophilic surface to hydrophobic surface, And then we made self aligned Ag solution patterns just after dipping the substrate, using adhesion difference of Ag solution between OTS treated hydrophobic area and non-OTS treated hydrophilic area. We finally get the Ag patterns through only dip-coating after the ${\mu}-CP$ process. And we observed surface energies on the glass substrate through the contact angle measurements as time goes on.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.55-61
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• 2012

We fabricated a-Si:H thin-film solar cell using the two-dimensional (2D) periodic patterned glass substrate. The use of a 3D periodic texture rather than a randomly texture at surface of TCO can result in higher short circuit current densities ($J_{sc}$). In order to analyze the optical effect of patterning glasses, ray-tracing simulations were performed. Also, p-i-n cells were deposited on patterned glasses as substrate by PECVD. UV-Vis spectroscopy, light I-V measurement were carried out for the optoelectronic characterization. The anti-reflective and light-trapping performance of patterning glass substrate was investigated by a comparison of experimental results with numerical simulations.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.231-231
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• 2010

GaN는 상온에서 3.4 eV의 넓은 밴드갭을 갖는 직접천이형 반도체로 우수한 전기적/광학적 특성 및 화학적 안정성으로 발광 다이오드 및 레이저 다이오드 등과 같은 광전소자 응용을 위한 소재로 많은 연구가 진행되어왔다. 특히, GaN 나노구조의 경우 낮은 결함밀도, 빠른 구동 및 고집적 특성 등을 가지기 때문에 효과적으로 소자의 광학적/전기적 특성을 향상시킬 수 있어 나노구조 성장을 위한 연구가 활발히 진행되고 있다. 최근에는 Metal organic vapor deposition (MOCVD), hot filament chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) 등 다양한 방법을 통해 성장된 GaN 나노구조가 보고되고 있다. 하지만 고가 장비 사용 및 높은 공정 온도, 복잡한 공정과정이 요구되며 크기조절, 조성비, 도핑 등과 같은 해결되어야 할 문제가 여전히 남아있다. 본 연구에서는 나노구조를 형성하기 위하여 보다 간단한 방법인 전기화학증착법을 이용하여 GaN 나노구조를 ITO 및 FTO가 증착된 전도성 glass 기판 위에 성장하였고 성장 메커니즘 및 그 특성을 분석하였다. GaN 나노구조는 gallium nitrate와 ammonium nitrate가 혼합된 전해질 용액에 Pt mesh 구조 및 전도성 glass 기판을 1cm의 거리를 유지하도록 담가두고 일정한 전압을 인가하여 성장시켰다. Pt mesh 구조 및 전도성 glass 기판은 각각 상대전극 (counter electrode) 및 작업전극 (working electrode)으로 사용되었고 전해질 용액의 농도, 인가전압, 성장시간 등의 다양한 조건을 통하여 GaN 나노구조를 성장하고 분석하였다. 성장된 GaN 나노구조 및 형태는 field emission scanning electron microscopy (FE-SEM)를 이용하여 분석하였고, energy dispersive X-ray (EDX) 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 성장된 GaN 나노구조의 결정성을 조사하기 위해 X-ray diffraction (XRD)을 측정 및 분석하였다. 또한, photoluminescence (PL) 분석으로부터 GaN 나노구조의 광학적 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.285-285
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• 2010

$Cu(In,Ga)Se_2$ (CIGS) 박막 태양전지 제조에는 동시증발법 (co-evaporation)으로 Cu, In, Ga, Se 각 원소의 증발을 세 단계로 제어하여 CIGS 박막을 증착하는 3-stage 방법이 널리 이용된다[1]. 3-stage 중 1st-stage에서는 In, Ga, Se 원소 만을 증발시켜 $(In,Ga)_2Se_3$ 전구체 (precursor) 박막을 성장시킨다. 고효율의 CIGS 태양전지를 위해서는 $(In,Ga)_2Se_3$ 전구체 증착의 공정 변수와 이에 따른 박막 특성의 이해가 중요하다. 본 연구에서는 Mo 박막이 증착된 소다석회유리 (soda lime glass) 기판에 동시증발장비를 이용하여 280 380 의 기판 온도에서 In, Ga, Se 물질을 증발시켜 $(In,Ga)_2Se_3$/Mo/glass 시료를 제작하였으며 XRD, SEM, EDS 등의 방법을 이용하여 특성을 분석하였다. XRD 분석 결과 기판 온도 $280{\sim}330^{\circ}C$에서는 $(In,Ga)_2Se_3$ 박막의 (006), (300) 피크가 관찰되었으며, 기판 온도가 증가할수록 (006) 피크 세기는 감소하였고 (300) 피크 세기는 증가하였다. $380^{\circ}C$에서는 (110)을 포함한 다수의 피크가 관찰되었다. 그레인 (grain) 크기는 기판 온도가 증가할수록 커지며 Ga/(In+Ga) 조성비는 기판 온도에 따라 일정함을 각각 SEM과 EDS 측정을 통해 알 수 있었다. $(In,Ga)_2Se_3$ 전구체의 (300) 배향은 CIGS 박막의 (220/204) 배향을 촉진하고[2], 이것은 높은 광전변환효율에 기여하는 것으로 알려져 있다. 때문에 $(In,Ga)_2Se_3$의 (300) 피크의 세기가 가장 큰 조건인 $330^{\circ}C$를 1st-stage 증착 온도로 하여 3-stage CIGS 태양전지 공정을 수행하였으며, $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 구조의 셀에서 광전변환효율 16.96%를 얻었다.