• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.238.2-238.2
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• 2015

Surface modification of vertically-aligned carbon nanotube (VACNT) is essential in order to meet specific demands for particular applications such as field emission displays, heat dissipation device and potential sun energy conversion due to their superior electrical and thermal conductivity and strong light absorption. In this study, we observe the effect of exposure to water vapor on a different lengths of the surfaces of VACNT. The study was conducted on three different lengths of the VACNT: short length around $200{\mu}m$, medium-length around $500{\mu}m$, and high length around 1 mm. Water exposure time ranges between 2-10 min and temperature of the water ranges from 60 to 120 oC. The result of water vapor exposure mainly show that increasing the exposure time and water temperature give rise to increase of the speed of change on the surface of the VACNT. Especially, the shorter VACNT change their surface morphology most rapidly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제22권11호
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• pp.999-1003
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• 2009

In this paper, CdS thin films well-known to window layer for solar cell were fabricated by means of vacuum evaporation method treated with different substrate heating. During film fabrication the substrates were heated at 50, 75 and $100^{\circ}C$, respectively. The thin films were then annealed at $200^{\circ}C$ in atmosphere, and the electrical and optical properties were investigated. By annealing, the hexagonal structure of films was changed into cubic structure. Their transmissivity was also increased and moved to longer wave band. It was shown that the film fabricated with the substrate heat-treated at $50^{\circ}C$ had the lowest resistivity.

• Journal of the Korean Vacuum Society
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• 제8권3B호
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• pp.340-345
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• 1999

In this paper, polyimide thin films are fabricated by vapor deposition polymerization method appling to the interlayer insulator of semiconductor device, and are investigated in detail. It is found that the packing density and uniformity of films deposited by thermal evaporation are increased according to curing temperature. The resistivity, breakdown strength, relative permitivity, and dielectric loss are $3.2\tomes10^{15}\Omega$cm, 4.61 MV/cm, 2.9(10kHz) at $25^{\circ}C$, respectively. This thin films can be endured at $230^{\circ}C$ for 20,000 hours. Finally, we conclude that the thin films having the characteristics similar to those of $SiO_2$ can be used as an insulation films between layers of semiconductor device.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.565-565
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• 2013

Free burning arcs where the work piece acts as an anode are frequently used for a number of applications. Our investigation is exclusively concerned with a simplified unified model of arcs and anode under steady state conditions at atmospheric pressure. The model is used to make predictions of arc and anode temperatures and arc voltage for a 200 A arc in argon. The computed temperatures along the axis between the cathode tip and the anode surface compare well the measured data. This knowledge of free burning arcfeatures can play a role in developing the atmospheric plasma systems, however, further investigation should include the modelling of Cu evaporation from anode and non-LTE situation near electrodes for more realistic calculations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.12-16
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• 1991

Cadmium sulphide films with thickness of 0.6∼1.2$\mu\textrm{m}$ were deposited onto corning 7059 glass substrate under a vacuum of 5${\times}$10$\^$-6/ Torr. Source and substrate temperature ranges used were 800∼1100$^{\circ}C$ and 100∼200$^{\circ}C$, respectively. The microstructures and semiconducting properties of the films were studied using X-ray diffraction, UV-VIS-IR spectrophotometer and Hall measurement unit. Electrical resistivity and optical transmission of the CdS films decrease with an increase in source temperature while they increase with an increase in substrate temperature. The resistivity of the film evaporated at 1100$^{\circ}C$ varied from 7${\times}$10$^3$ohm-cm at the substrate temperature of 100$^{\circ}C$ to 2${\times}$10$\_$6/ohm-cm at 190$^{\circ}C$. All the films had hexagonal structure and strong texture with c-axis of grains normal to the substrate glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.56-59
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• 1991

The polyervstalline $Cu_{0.28}Ag_{0.72}InSe_{4.4}S_{0.6}$ thin films are prepared by vacuum heat treatment of laver, which is deposited by direct resisting vacuum evaporation. From optical absorption spetra, the optical hand gap energy is determined to be 1.5[eV] at room temerature. From electrical method. hole concentration, resistivity and mobility are 9.3*$10^{18}$[$cm^{-3}$], 6*$10^{-2}$[$\Omega$$.$cm], 11.2[$\textrm{cm}^2$/V$.$sec] respectively at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.248-248
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• 2010

We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.184.1-184.1
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• 2014

Nanostructures on Graphene surface receive highly attraction for many applications ranging from sensing technologies to molecular electronics. Recently J. Jasuja et al. reported the electrical property tailoring and Raman enhancement by the implantation and growth of dendritic gold nanostructures on graphene derivatives [ACSNANO, 3, 2358, 2013] Here, we introduced Si vapor on the graphen to induce the nanostructure. The surface property change of graphene by controlling the amount of Si and the thickness of graphene were investigated using high resolution photoemission spectroscopy (HRPES), and atomic force microscopy (AFM). The Si nanostructures on graphene show the thickness dependency of graphene, and the size of Si nano-structure reached to 7 nm and 15 nm on the mono and the multilayered graphene after $30{\AA}$ Si evaporation.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.266.2-266.2
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• 2014

박막형 전기변색 소자의 특성파악을 위하여, 투명전극층으로 ITO를 이용하였으며, 가장 우수한 전기변색 특성을 나타내는 것으로 알려져 있는 $WO_3$를 DC magnetron sputtering방식을 이용하여 증착하였으며, 무기전해질층은 E-beam evaporation 방식으로 증착하고, 이온저장층을 제외한 박막형 전기변색 소자 구조를 제작하여 전기변색층의 증착조건에 따른 전기변색 소자 특성 연구를 수행하였다. 증착온도와 혼합gas의 분합비 등의 조건의 변화를 통한 박막 특성을 확인하였으며, XRD, SEM, TEM, Transmission Measurement 등을 이용하여 박막 분석을 하였다. ITO층의 저항에 따른 변색효율을 확인하였으며, $WO_3$층의 산소분합비에 따른 투과율변화를 분석하였다. 이온저장층을 제거한 상태에서의 박막형 전기변색 소자의 투과율변화가 가시광선 영역에서 45%의 변색효과를 확인하였다.