• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.58.1-58.1
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• 2011

WC-Co and other similar cemented carbides have been widely used as hard materials in industrial cutting tools and as mould metals; and a number of techniques have been applied to improve its microstructural characteristics, hardness and ear resistance. Cobalt is used primarily to facilitate liquid phase sintering and acts as a matrix, i.e. a cementing phase between WC grains. A uniform distribution of metal phase in a ceramic is beneficial for improved mechanical properties of the composite. WC-Co, starting from initial powders, is vastly used for a variety of machining, cutting, drilling, and other applications because of its unique combination of high strength, high hardness, high toughness, and moderate modulus of elasticity, especially with fine grained WC and finely distributed cobalt. In this study, that started with two different compositions of initial powders, WC-7.5wt%Co and WC-12wt%Co with initial powder size being 1~3 ${\mu}m$, magnetic pulsed compaction followed by subsequent vacuum sintering were carried out to produce consolidated preforms. Magnetic Pulsed Compaction (MPC), a very short duration (~600 ${\mu}s$), high pressure (~4 Gpa), high-density preform molding method was used with varied pressure between 0.5 and 3.0 Gpa, in order to reach an initial high density that would help improve the sintering behavior. For both compositions and varied MPC pressure, before and after sintering, changes in microstructural behavior and mechanical properties were analyzed. With proper combination of MPC pressure and sintering, samples were obtained with better mechanical properties, densification and microstructural behavior, and considerably improved than other conventional processes.

• 한국재료학회지
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• 제30권4호
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년도 제30회 춘계학술대회논문집
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• pp.321-327
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• 2008

초음속 디퓨져를 사용하는 고도모사 장치에서 기존에 연구되었던 일정단면적 형태를 개선해 2차 목 형태 디퓨져의 효과를 고찰하였다. 기 수행 된 일정단면적 디퓨져 정상상태 해석 결과 및 공압시험 데이터를 바탕으로 본 연구의 해석방법을 검증하고, 2차목에 의한 효과를 정량화시키기 위해 노즐전압력과 2차목 면적에 따른 시동성능과 진공챔버압력 변화에 관하여 해석하였다. 일정단면적 디퓨져 내부 벽면 및 중심축을 따른 압력데이터 비교에서 일치하는 거동을 확인했으며, 2차목의 사용에 의해 시동을 위한 노즐 전압력이 현저히 낮아짐을 알 수 있었다. 저팽창비 노즐 사용으로 인하여 2차목에 의한 진공챔버 내 압력 변화는 거의 없음을 관찰하였다.

• 한국결정성장학회지
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• 제16권4호
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.

• 한국수소및신에너지학회논문집
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• 제7권2호
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• pp.157-164
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• 1996

The AB5-type metal hydride electrodes using $(LM)Ni_{4.49}Co_{0.1}Mn_{0.205}Al_{0.205}$(LM : Lanthaniumrich Mischmetal) alloy powders(${\leq}200$mesh) which were coated with 25wt% copper in an acidic bath were prepared with or without addition of 10wt% PTFE as a binder. Prior to electrochemical measurements, the electrodes were sintered at $40^{\circ}C$ for 1 and 2hrs in vacuum with Mm(mischmetal) and sponge type Ti getters. The properties such as maximum capacity, cycle life and mechanical strength of the negative electrode have been investigated. The surface analysis of the electrode was also obtained before and after charge-discharge cycling using scanning electron microscope(SEM). From the observations of electrochemical behavior, it was found that the sintered electrode shows a lower maximum discharge capacity compared with non-sintered electrode but it shows a better cycle life. For the both electrodes with or without addition of PTFE binder, the values of mechanical strength were obtained, and their values increased with increasing sintering time. However, there is little difference of discharge capacity for both electrodes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• 대한전자공학회논문지
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• 제21권4호
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• pp.52-57
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• 1984

InP표면에 화확적 방법으로 성장시킨 산화막을 금속과 n-InP사이에 삽입시켜 제작한 InP 턴넬 MIS(m etal-insulator-semiconductor)소자의 전기적 특성과 그 불안정성을 조사하였다. 성장된 박막은 In2O3와 P2O5가 혼합된 형태를 이루고 있었으며, 그 두께는 약 200A°으로 추정되었다. 이 MIS다이오em의 순방향전류와 역방향전류는 진공중에서의 약간의 열처리로도 증가하였으며, 다습한 분위기에서는 감소되는 현상이 관측 되었다. 이와 같은 전류-전압 특성곡선의 변화 및 그 불안정성은 수분의 흡수에 따른 산화박막의 물리 화학적 특성과 경계면 상태밀도의 변차에 기인되는 현상임을 논의하였다.

• 천문학회지
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• 제29권spc1호
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• pp.333-335
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• 1996

Here we report the results from spectroscopic observations of soloar active regions in the HeI 10830 ${\AA}$ line at the German Vacuum Tower Telescope(VTT) in Tenerife during the August 199:3 International EFR(Emerging Flux Region) Campaign. Four active regions in various stages of their evolution, i.e., NOAA7558, 7560, 7561, and 7562, were ovserved on 10 August 1993. From the observed HeI 10830 ${\AA}$ spectra in these active regions, spectroscopic quantities such as equivalent width(EW), doppler shift, doppler width, etc., were derived(see Figure l(a)) and the correlation between them were studied(see Figure l(b)). Our main results are as follows: (I)In NOAA7562, which is a young and evolving EFR, the EW is large, while it is small around a simple and roundish spot of NOAA7558. (2)In these active regions, redshift in the 10830 line is dominant when the EW is larger. (3)As the doppler width increases, the line tends to shift redward. (4)When the EW is smaller, it seems to exist another component which have dynamic characteristics different from the redshifting component. In NOAA7560 and NOAA7561, regions which have several small spots, the values of the EW are intermediate. Results (2) and (3) may suggest the possible existence of downflow above active regions, if the HeI 10830 ${\AA}$line is formed in the upper chromopshere, and it is consistent with the earlyer result from the SMM extreme-ultraviolet observation by Klimchuk(1987, Astrophys. J., 323, 368) (to be submitted. to Astronomy and Astrophysics; an extended abstract)