• Title/Summary/Keyword: VUV SE

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Dielectric Function Analysis of Cubic CdSe Using Parametric Semiconductor Model (변수화 반도체 모델을 이용한 Cubic Zinc-blonde CdSe의 유전함수 분석)

  • Jung, Y.W.;Ghong, T.H.;Lee, S.Y.;Kim, Y.D.
    • Journal of the Korean Vacuum Society
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    • v.16 no.1
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    • pp.40-45
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    • 2007
  • ZnCdSe alloy semiconductor was widely used for the optoelectronic device. And CdSe is the end-point in this material. In this work, we measured the dielectric function spectrum of cubic CdSe with Vacuum Ultra Violet spectroscopic ellipsometry and analysed this data with parametric model. As a result, we observed some of transition energy point over 6 eV and obtained the database for dielectric function spectrum, which could be used for temperature or alloy composition dependence study on optical property of CdSe.

Synthesis and VUV Photoluminescence Characterization of a Tb-activated LiGd$(PO_3)_4$

  • Tae, Se-Won;Choi, Sung-Ho;Hur, Nam-Hoe;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1283-1286
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    • 2009
  • The structural and optical properties on $Tb^{3+}$ addition into LiGd$(PO_3)_4$ compound were investigated by X-ray powder diffraction and photoluminescence spectroscopy. The emission spectrum shows the strongest peak corresponding to the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ at 546 nm under 147 nm and 173 nm excitation. 85 mol% concentration of $Tb^{3+}$ for LiGd$(PO_3)_4$ is much higher than other Tb-doped phosphors.

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