• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.13-26
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• 1999

This paper presents a metric that can guide to optimal circuit models for interconnects among various models, given interconnect parameters and operating environment. To get this goal, we categorize interconnects into RC~c1ass and RLC-c1ass model domains based on the quantitative modeling error analysis using total resistance, inductance and capacitance of interconnects as well as operating frequency. RC~c1ass circuit models, which include most on~chip interconnects, can be efficiently analyzed by using the model~order reduction techniques. RLC-c1ass circuit models are constructed using one of three candidates, ILC(Iterative Ladder Circuit) macromodels, MC(Method of Characteristics) macromodels, and state-based convolution method, the selection process of which is based upon the allowable modeling error and electrical parameters of interconnects. We propose the model domain diagram leading to optimal circuit models and the division of model domains has been achieved considering the simulation cost of macromodels under the environmental assumption of the general purpose circuit simulator such as SPICE. The macromodeling method presented in this paper keeps the passivity of the original interconnects and accordingly guarantees the unconditional stability of circuit models.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.54-62
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• 2004

In this paper, we discuss on the design of a current mode CMOS multiplier circuit over $GF(3^m)$. Using the standard basis, we show the variation of vector representation of multiplicand by multiplying primitive element α, which completes the multiplicative process. For the $GF(3^m)$ multiplicative circuit design, we design GF(3) adder and multiplier circuit using current mode CMOS technology and get the simulation results. Using the basic gates - GF(3) adder and multiplier, we build the $GF(3^m)$ multiplier circuit and show the examples for the case m=3. We also propose the assembly of the operation blocks for a complete $GF(3^m)$ multiplier. Therefore, the proposed circuit is easily extensible to other p and m values over $GF(p^m)$ and has advantages for VLSI implementation. We verify the validity of the proposed circuit by functional simulations and the results are provided.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.6A
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• pp.555-561
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• 2002

In this paper, a new designed circuit of highly parallel multiplier using standard basis over $GF(2^m)$ is presented. Prior to construct the multiplier circuit, we provide the Vector Code Generate Module(VCGM) that generate each vector codes for multiplication. Using these VCGMs, we can get all vector codes necessary for operation and modular sum up each independent corresponding basis, respectively. Following the equations in this paper, we can design generalized multiplier to m. For the proposed circuit in this parer, we show the example in $GF(2^4)$ using VCGMs. In this paper, we build a multiplier with VCGMs, AND blocks, and EX-OR blocks. Therefore the proposed circuit is easy to generalize for m and advantageous for VLSI. Also, it need no memory element and the latency not less fewer then other circuit. We verify the proposed circuit by functional simulation and show its result. Finally, we compare the circuit composition with other works and show its result with a table.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.13-22
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• 1998

In this paper, we propose a high-performance BICS(built-in current sensor) which is fabricated in 0.8${\mu}{\textrm}{m}$ single-poly two-metal process for IDDQ testing of CMOS VLSI circuit. The CUT(circuit under test) is 4-bit full adder with a bridging fault. Using two nMOSs that have different size, two bridging faults that have different resistance values are injected in the CUT. And controlling a gate node, we experimented various fault effects. The proposed BICS detects the faulty current at the end of the clock period, therefore it can test a CUT that has a much longer critical propagation delay time and larger area than conventional BICSs. As expected in the HSPICE simulation, experimental results of fabricated chip demonstrated that the proposed BICS can exactly detect bridging faults in the circuit.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.3
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• pp.26-34
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• 1999

A new silicon-based IC interconnect transmission line parameter extraction methodology is presented and experimentally examined. Unlike the PCB or MCM interconnects, a dominant energy propagation mode in the silicon-based IC interconnects is not quasi-TEM but slow wave mode(SWM). The transmission line parameters are extracted taking the silicon substrate effect (i.e., slow wave mode) into account. The capacitances are calculated considering silicon substrate surface as a ground. Whereas the inductances are calculated by using an effective dielectric constant. In order to verify the proposed method, test patterns were designed. Experimental data have agreement within 10%. Further, crosstalk noise simulation shows excellent agreements with the measurements which are performed with high-speed time domain measurement ( i.e., TDR/TDT measurements) for test pattern, while RC model or RLC model without silicon substrate effect show about 20~25% underestimation error.

• The Journal of the Acoustical Society of Korea
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• v.14 no.5
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• pp.63-73
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• 1995

The conventional acoustic sounds can be synthesized by Frequency Modulation which includes the variation of frequency, amplitude, and modulation index. In this paper the number of variable synthesis parameters are limited to easily implement the existing two carrier FM algorithm by hardware. The DSP(Digital Signal Processor), which is able to carry out the modified algorithm and synthesize 16 sounds at a time, is designed with $0.8{\mu}m$ standard sells. The DSP which can synthesize 2 sounds at a time is implemented by ASIC emulator to examine the sound quality of the designed DSP. Through the objective and subjective estimation, it is confirmed that the sounds of many instruments from the implemented DSP are very closed to their real sound. Finally the designed DSP is layouted and simulated by VLSI desgn tool. According to the simulation, the designed DSP has the sufficiently fast speed for synthesizing 16 sounds at a time.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.29-38
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• 1998

In this paper, we have induced a model for the growth and dissolution of oxygen precipitates which is generated during arbitrary thermal treatments or VLSI processes in CZ-grown silicon. Based on diffusion-limited growth law and detailed balance equilibrium theory, growth and dissolution rates are induced and inserted into a set of chemical rate equations and a Fokker-Planck equation. Then this is solved by numerical analysis. And because phenomenon at the silicon surface must be considered differently in various annealing conditions, in particular in $O_2$ ambient we have considered the growth model of SiO$_2$ at the surface of silicon wafer and the enhancement of oxygen solubility. By this method, oxygen depth profile and density distribution of oxygen precipitates are calculated more accurately than the other simulation results.

• Journal of the Korea Society of Computer and Information
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• v.11 no.2 s.40
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• pp.159-167
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• 2006

Lipreading has been suggested as one of the methods to improve the performance of speech recognition in noisy environment. However, existing methods are developed and implemented only in software. This paper suggests a hardware design for real-time lipreading. For real-time processing and feasible implementation, we decompose the lipreading system into three parts; image acquisition module, feature vector extraction module, and recognition module. Image acquisition module capture input image by using CMOS image sensor. The feature vector extraction module extracts feature vector from the input image by using parallel block matching algorithm. The parallel block matching algorithm is coded and simulated for FPGA circuit. Recognition module uses HMM based recognition algorithm. The recognition algorithm is coded and simulated by using DSP chip. The simulation results show that a real-time lipreading system can be implemented in hardware.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.3
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• pp.191-200
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• 2002

In this paper, we present the method transforming the interval functions into the truncated difference functions for multi-variable multi-valued functions and implementing the truncated difference functions to the multiple valued logic circuits with uniform patterns using the current mirror circuits and the inhibit circuits by current-mode CMOS. Also, we apply the presented methods to the implementation of circuits for additive truth table of 2-variable 4-valued MOD(4) and multiplicative truth table of 2-variable 4-valued finite fields GF(4). These circuits are simulated under 2${\mu}{\textrm}{m}$ CMOS standard technology, 15$mutextrm{A}$ unit current, and 3.3V power supply voltage using PSpice. The simulation results have shown the satisfying current characteristics. Both implemented circuits using current-mode CMOS have the uniform Patterns and the regularity of interconnection. Also, it is expansible for the variables of multiple valued logic functions and are suitable for VLSI implementation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2509-2515
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• 2014

In this paper, the conventional vertical structure for VLSI circuits CMOS intend to improve the stress effects of active region and built-in threshold voltage. For these improvement, the proposed structure is shallow trench isolation of moat shape. We want to analysis the electron concentration distribution, gate bias vs energy band, thermal stress and dielectric enhanced field of thermal damage between vertical structure and proposed moat shape. Physically based models are the ambient and stress bias conditions of TCAD tool. As an analysis results, shallow trench structure were intended to be electric functions of passive as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.