• Proceedings of the KAIS Fall Conference
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• 2007.11a
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• pp.78-80
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• 2007

According to the development of VLSI integration technology and getting bigger the circuit size, it is a significant problem to verify systemized circuit. The faster and more accurate verification has very significant meaning in the field of electronic industry because it can yield the product comparably faster and reduce the trial and errors. In spite of the presence of various kind of Integrated Circuits it's not always easy to get the right part. Besides, it is hard to find a vendor for a small quantity consumers like who develop prototype applications. In this study, we've tried to get the logical signals from the PC based device we've developed that correspondents with the real ICs. It can emulate decoder ICs, multiplexers, demultiplexers and basic logic gates.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.17-22
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• 2019

As CMOS technology scales down, reliability is becoming an important concern for VLSI designers. This paper analyzes gate-oxide breakdowns (i.e., the time-dependent dielectric-breakdown (TDDB) aging effect) as a reliability issue for combinational circuits with 45-nm technology. This paper shows simulation results for the noise margin, delay, and power using a single inverter-chain circuit, as well as the International Symposium on Circuits and Systems (ISCAS)'85 benchmark circuits. The delay and power variations in the presence of TDDB are also discussed in the paper. Finally, we propose a novel method to compensate for the logic failure due to dielectric breakdowns: We used a higher supply voltage and a negative ground voltage for the circuit. The proposed method was verified using the ISCAS'85 benchmark circuits.

• ETRI Journal
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• v.44 no.3
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• pp.491-503
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• 2022

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are continuously scaling down in the nanoscale region to improve the functionality of integrated circuits. The scaling down of MOSFET devices causes short-channel effects in the nanoscale region. In nanoscale region, leakage current components are increasing, resulting in substantial power dissipation. Very large-scale integration designers are constantly exploring different effective methods of mitigating the power dissipation. In this study, a transistor-level input-controlled stacking (ICS) approach is proposed for minimizing significant power dissipation. A low-power ICS approach is extensively discussed to verify its importance in low-power applications. Circuit reliability is monitored for process and voltage and temperature variations. The ICS approach is designed and simulated using Cadence's tools and compared with existing low-power and high-speed techniques at a 22-nm technology node. The ICS approach decreases power dissipation by 84.95% at a cost of 5.89 times increase in propagation delay, and improves energy dissipation reliability by 82.54% compared with conventional circuit for a ring oscillator comprising 5-inverters.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.11
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.47-56
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• 1999

As the density of logic gates of VLSI chips has rapidly increased, more number of I/O pins has been required. This results in bigger package size and higher packager cost. The package cost is higher than the cost of bare chips for high I/O count VLSI chips. As the density of logic gates increases, the reduction method of the number of I/O pins for a given complexity of logic gates is required. In this paper, we propose the novel I/O interface circuit using CTR (Constant-Transition-Rate) code to reduce 50% of the number of I/O pins. The rising and falling edges of the symbol pulse of CTR codes contain 2-bit digital data, respectively. Since each symbol of the proposed CTR codes contains 4-bit digital data, the symbol rate can be reduced by the factor of 2 compared with the conventional I/O interface circuit. Also, the simultaneous switching noise(SSN) can be reduced because the transition rate is constant and the transition point of the symbols is widely distributed. The channel encoder is implemented only logic circuits and the circuit of the channel decoder is designed using the over-sampling method. The proper operation of the designed I/O interface circuit was verified using. HSPICE simulation with 0.6 m CMOS SPICE parameters. The simulation results indicate that the data transmission rate of the proposed circuit using 0.6 m CMOS technology is more than 200 Mbps/pin. We implemented the proposed circuit using Altera's FPGA and confimed the operation with the data transfer rate of 22.5 Mbps/pin.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.465-469
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• 2000

This paper describes a single-chip full-custom implementation of pipelined adaptive decision-feedback equalizer (PADFE) using a 0.25-${\mu}{\textrm}{m}$ CMOS technology for wide-band wireless digital communication systems. To enhance the throughput rate of ADFE, two pipeline stage are inserted into the critical path of the ADFE by using delayed least-mean-square (DLMS) algorithm Redundant binary (RB) arithmetic is applied to all the data processing of the PADFE including filter taps and coefficient update blocks. When compared with conventional methods based on two's complement arithmetic, the proposed approach reduces arithmetic complexity, as well as results in a very simple complex-valued filter structure, thus suitable for VLSI implementation. The design parameters including pipeline stage, filter tap, coefficient and internal bit-width and equalization performance such as bit error rate (BER) and convergence speed are analyzed by algorithm-level simulation using COSSAP. The singl-chip PADFE contains about 205,000 transistors on an area of about 1.96$\times$1.35-$\textrm{mm}^2$. Simulation results show that it can safely operate with 200-MHz clock frequency at 2.5-V supply, and its estimated power dissipation is about 890-mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.60-69
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• 2000

This paper describes a single-chip full-custom implementation of pipelined adaptive decision-feedback equalizer(PADFE) using a 0.25-${\mu}m$ CMOS technology for wide-band wireless digital communication systems. To enhance the throughput rate of ADFE, two pipeline stages are inserted into the critical path of the ADFE by using delayed least-mean-square(DLMS) algorithm. Redundant binary (RB) arithmetic is applied to all the data processing of the PADFE including filter taps and coefficient update blocks. When compared with conventional methods based on two's complement arithmetic, the proposed approach reduces arithmetic complexity, as well as results in a very simple complex-valued filter structure, thus suitable for VLSI implementation. The design parameters including pipeline stage, filter tap, coefficient and internal bit-width, and equalization performance such as bit error rate (BER) and convergence speed are analyzed by algorithm-level simulation using COSSAP. The single-chip PADFE contains about 205,000 transistors on an area of about $1.96\times1.35-mm^2$. Simulation results show that it can safely operate with 200-MHz clock frequency at 2.5-V supply, and its estimated power dissipation is about 890-mW. Test results show that the fabricated chip works functionally well.

• The Transactions of the Korea Information Processing Society
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• v.4 no.2
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• pp.628-638
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• 1997

This paper describes an implementation of fault simulator that can switch level fault models such as transistor stuck-open and stuck-closed faults as well as stuck-at faults. It overcomes the limitation when only stuck-at faults are used in VLSI circuits. Signal flow of a transistor switch is bidirectional in its nature, but most of signal flows in a switch level circuits, about 95%, are in one direction. This fault simulator focuses on the way which changes a switch level circuit into a graph model with two directed edges. Two paths from Vdd to ground and from ground to directions. Logic simulation is performed along dominant signal flows. The switch level fault simulation estimates the dominant path by injecting switch-level fualts, and pattern vectors are used for faults simulation. Experimental results are shown to demonstrate correctness of the fault simulator.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1750-1752
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• 1999

An active-matrix liquid crystal display (LCD) using thin film transistors (TFTs) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the sate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed. The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.99-105
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• 2004

A shared-capacitor charge-sharing ROM (SCCS-ROM) using dummy bit lines is proposed. The SCCS-ROM reduces the bit line swing voltage using the charge-sharing technique of the conventional charge-sharing ROM (CS-ROM). Although the CS-ROM needs three small capacitors per output bit, the proposed SCCS-ROM shares the capacitors so that it needs only three capacitors. The SCCS-ROM implements the capacitors using dummy bit lines. This not only increases noise immunity but also reduces power. A SCCS-ROM with 8K${\times}$15bits implemented in a 0.35${\mu}{\textrm}{m}$ CMOS process. The SCCS-ROM consumes 8.63㎽ at 100MHz with 3.3V The simulation results show that the SCCS-ROM reduces 8.4% power compared to the CS-ROM.