• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.8
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• pp.8-21
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• 1997

In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in MOS FETs included in typical memory cell of VLSI SRAM and analyze behavior of memory by using PSPICE simulation. Using conventional fault models and this behavioral analysis, we propose linear testing algorithm of complexity O(N) which can be applied to both functional testing and IDDQ (quiescent power supply current) testing simultaneously to improve functionality and reliability of memory. Finally, we implement BIST (built-in self tsst) circuit and BICS(built-in current sensor), which are embedded on memory chip, to carry out functional testing efficiently and to detect various defects at high-speed respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.102-106
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• 2003

This paper describes novel low-power high-speed flip-flop called dual edge-triggered NAND keeper flip-flop (DETNKFF). The flip-flop achieves substantial power reduction by incorporating dual edge-triggered operation and by eliminating redundant transitions. It also minimizes the data-to-output latency by reducing the height of transistor stack on the critical path. Moreover, DETNKFF allows negative setup time to provide useful attribute of soft clock edge by incorporating the pulse-triggered operation. The proposed flip-flop was designed using a $0.35{\;}\mutextrm{m}$ CMOS technology. The simulation results indicate that, for the typical input switching activity of 0.3, DETNKFF reduces power consumption by as much as 21 %. Latency is also improved by about 6 % as compared to the conventional flip-flop. The improvement of power-delay product is also as much as 25 %.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.260-266
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• 2007

Analytical compact form models for the signal transients and crosstalk noise of inductive-effect-prominent multi-coupled RLC lines are developed. Capacitive and inductive coupling effects are investigated and formulated in terms of the equivalent transmission line model and transmission line parameters for fundamental modes. The signal transients and crosstalk noise expressions of two coupled lines are derived by using a waveform approximation technique. It is shown that the models have excellent agreement with SPICE simulation.

• Journal of information and communication convergence engineering
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• v.8 no.6
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• pp.716-720
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• 2010

This paper proposes an effective fingerprint identification system with hardware block for thinning stage processing of a verification algorithm based on minutiae with 39% occupation of 32-bit RISC microprocessor cycle. Each step of a fingerprint algorithm is analyzed based on FPGA and ARMulator. This paper designs an effective hardware scheme for thinning stage processing using the Verilog-HDL in $160{\times}192$ pixel array. The ZS algorithm is applied for a thinning stage. The logic is also synthesized in $0.35{\mu}m$ 4-metal CMOS process. The layout is performed based on an auto placement-routing and post-simulation is performed in logic level. The result is compared with a conventional one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.40-45
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• 1994

The TCAD(Technology Computer Aided Design) software tool is a popular name to be able to simulate the semiconductor process and device circuit. We have developed a two-dimensional TCAD software tool included an editor, parser, each process unit, and 2D, 3D graphic routine that is Integrated Environment. The initial grid for numerical analysis is automatically generated with the geometric series that use the user default(given) line and position separated with grid interval and the nodes corresponding to each mesh point stoic the all the possible attribute. Also, we made a data structure called PIF for input or output. Methods of ion implantation in this paper arc Monte Carlo, Gaussian Pearson and Dual-Pearson. Analytical model such as Gaussian, Pearson and Dual-Pearson were considered the multilayer structure and two-dimensional tilted implantation. We simuttaneously calculated the continuity equation of impurity and point defect in diffusion simulation. Oxidation process was simulated by analytical ERFC(Complementary Error Function) model for local oxidation.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.30-30
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• 2000

In the three axis control of satellite by using reaction wheel and gyro, a Gyro carries out measuring of the attitude angie and the attitude angular velocity. The Gyro is operated by the electronic part and the mechanic actuator. The digital part of the electronic part is consisted of the FPGA (Field Programmable Gate Array), which is one of the methods for designing VLSI (Very Large Scale Integrated Circuit), and the mechanic actuator processes the input/output data by the dynamic model. In the research of the mixed mode of Gyro, the simulation is accomplished by SABER of the mixed mode simulator and the results for the practical implementation of the satellite ACS (Attitude Control System) interfaced with the data processing are proposed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.12A
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• pp.1133-1137
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• 2008

Sphere decoding is considered as one of the most promising methods for multiple-input multiple-output (MIMO) detection. This paper proposes a novel 2-level-search sphere decoding algorithm. In the proposed algorithm, symbol detection is concurrently performed on two levels of the tree search, which helps avoid discarding good candidates at early stages. Simulation results demonstrate the good performance of the proposed algorithm in terms of bit-error-rate (BER).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.1-4
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• 1996

EEPROM technology has been used for storing analog weights as charge in a nitride layer between gate and channel of a field effect transistor. In the view of integrity and fabrication process, it is essentially required that SONOSFET is capable of performing synapse function as a basic element in an artificial neural networks. This work has introduced the VLSI implementation for synapses including current study and also investigated physical characteristics to implement synapse circuit using SONOSFET memories. Simulation results are shown in this work. It is proposed that multiplication of synapse element using SONOSFET memories will be developed more compact implementation under Present fabrication processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.7-12
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• 2004

New modular Lateral Information Propagation Networks(LIPN) has been designed. The LIPN has shown to be useful for interpolation of information[3]. The problem is the fact that only the small number of nodes can be implemented in a IC chip with the circuit VLSI technology. The proposed modular architecture is for enlarging the neural network through inter module connections. For such inter module connections, the host(computer or logic) mediates the exchange of information among modules. Also border nodes in each module have capacitors for temporarily retaining the information from outer modules. Simulation of interpolation with the designed LIPN has been done through various experiments.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.271-274
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• 2003

This paper presents a Built-in Current Sensor that detect defects in CMOS integrated circuits using the current testing technique. This scheme employs a cross-coupled connected PMOS transistors, it is used as a current comparator. Our proposed scheme is a negligible impart on the performance of the circuit undo. test (CUT). In addition, in the normal mode of the CUT not dissipation extra power, high speed detection time and applicable deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The entire area of the test chip is $116{\times}65{\mu}m^2$. The BICS occupies only $41{\times}17{\mu}m^2$ of area in the test chip. The area overhead of a BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS technology.