• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.4 s.310
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• pp.53-59
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• 2006

This paper describes the new design technique of full wave rectifier (FWR) for precise measurement instrument and the chip implementation of this FWR circuit with measurement results. Conventional circuits have some problems of complex design and limited output range( $VDD/2{\sim}VLIIV1IT+$). Proposed FWR circuit was simply designed with two 2x1 MUXs, one high speed comparator, and one differential difference amplifier(DDA). One rail-to-rail differential difference amplifier(DDA) performs the DC level shifting to VSS and 2X amplification simultaneously, and enables the full range ($Vss{\sim}VDD$) operation. The proposed FWR circuits shows more than 50% reduction of chip area and power consumption compared to conventional one. Proposed circuit was implemented with 0.35um 1-poly 2-metal CMOS process. Core size is $150um{\times}450um$ and power dissipation is 840uW with 3.3V single supply.

• Proceedings of the KTCVS Conference
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• 1984.10a
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• pp.61-62
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• 1984

• Journal of Information Display
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• v.9 no.2
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• pp.9-13
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• 2008

A novel push-pull voltage converter structure, using a switched capacitor type voltage doubler, is proposed. The circuit is constructed with a two-stage push-pull voltage doubler that has a stable operation with small output ripple. The two-stage voltage doubler creates the output voltage 4Vdd. The high clock signal is cross-coupled to the input of the second stage with the opposite phase to reduce two switching transistors and capacitors. Simulation results verify that even with a reduced number of transistor and capacitor, there is no circuit performance loss. Adding one capacitor and two switching transistors the circuit can be changed to eight times of Vdd maker.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.283-287
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• 2002

To remedy both the degradation and saturation of the output voltages in the modified Dickson pump. a new multi-stage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94 even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.6
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• pp.17-25
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• 2004

In this paper, we propose a new small swing domino logic for low-power consumption. To reduce the power consumption, both the precharge node and the output node swing the range from 0 to $V_{REF}$- $V_{THN}$, where $V_{REF}$=VDD-n $V_{THN}$ (n=1, 2, and 3). This can be done by adding the inverter structure on domino logic that allows a full swing or a small swing on its input terminal without leakage current. Compared to previous works, the proposed structure can save the power consumption of more than 30% for n=0, 1, 2, and 3 in the equation of $V_{REF}$=VDD-n $V_{THN}$. A multiplier applying the proposed domino logic has been designed and fabricated using a 0.35-${\mu}{\textrm}{m}$ n-well CMOS process under 3.3-V supply voltage. Compared with other previous works, it shows a 30% power reduction and a better feature in power-delay product.lay product.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.486-495
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• 2006

In this paper, a low-power 1Kb synchronous EEPROM is designed with flash cells for passive UHF RFID tag chips. To make a low-power EEPROM, four techniques are newly proposed. Firstly, dual power supply voltages VDD(1.5V) and VDDP(2.5V), are used. Secondly, CKE signal is used to remove switching current due to clocking of synchronous circuits. Thirdly, a low-speed but low-power sensing scheme using clocked inverters is used instead of the conventional current sensing method. Lastly, the low-voltage, VDD for the reference voltage generator is supplied by using the Voltage-up converter in write cycle. An EEPROM is fabricated with the $0.25{\mu}m$ EEPROM process. Simulation results show that power dissipations are $4.25{\mu}W$ in the read cycle and $25{\mu}W$ in the write cycle, respectively. The layout area is $646.3\times657.68{\mu}m^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.517-526
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• 2008

A one-chip DC-DC converter circuit for OLED(Organic Light-Emitting Diode) display module of automotive clusters is newly proposed. OLED panel driving voltage circuit, which is a charge-pump type, has improved characteristics in miniaturization, low cost and EMI(Electro-Magnetic Interference) compared with DC-DC converter of PWM(Pulse Width Modulator) type. By using bulk-potential biasing circuit, charge loss due to parasitic PNP BJT formed in charge pumping, is prevented. In addition, the current dissipation in start-up circuit of band-gap reference voltage generator is reduced by 42% and the layout area of ring oscillator is reduced by using a logic voltage VLP in ring oscillator circuit using VDD supply voltage. The driving current of VDD, OLED driving voltage, is over 40mA, which is required in OLED panels. The test chip is being manufactured using $0.25{\mu}m$ high-voltage process and the layout area is $477{\mu}m{\times}653{\mu}m$.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.369-372
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• 2002

To remedy both the degradation and saturation of the output voltages in the modified Dickson pump, a new multistage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94V even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.785-788
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• 2007

The newly proposed badgap reference voltage generator is insensible to PVT(process, voltage, temperature) variation and has a lower minimum supply voltage, which is required for stable operation. The simulation result is that the bandgap reference voltage generator starts operation at 1.0V of supply voltage. The layout of the bandgap reference voltage generator is designed using Magnachip $0.18{\mu}m$ DDI process, and the size is $409.36{\mu}m$ ${\times}$ $435.46{\mu}m$.

• Journal of IKEEE
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• v.17 no.3
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• pp.378-384
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• 2013

We have investigated the electrical characteristics of SCR(Silicon Controlled Rectifier)-based ESD power clamp circuit with high holding voltage and dual-directional ESD protection cells for a whole-chip ESD protection. The measurement results indicate that the dimension of n/p-well and p-drift has a great effect on holding voltage (2V-5V). Also A dual-directional ESD protection circuit is designed for I/O ESD protection application. The trigger voltage and the holding voltage are measured to 5V and 3V respectively. In comparison with typical ESD protection schemes for whole-chip ESD protection, this ESD protection device can provide an effective protection for ICs against ESD pulses in the two opposite directions, so this design scheme for whole-chip ESD protection can be discharged in ESD-stress mode (PD, ND, PS, NS) as well as VDD-VSS mode. Finally, a whole-chip ESD protection can be applied to 2.5~3.3V VDD applications. The robustness of the novel ESD protection cells are measured to HBM 8kV and MM 400V.