• Title/Summary/Keyword: VCSEL

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Optical Design of an Integrated Two-Channel Optical Transmitter for an HDMI interface (광 HDMI 인터페이스용 2채널 광송신기 광학 설계)

  • Yoon, Hyun-Jae;Kang, Hyun-Seo
    • Korean Journal of Optics and Photonics
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    • v.26 no.5
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    • pp.269-274
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    • 2015
  • In this paper we design the optical system for an integrated two-channel TO-type optical transmitter to apply the HDMI interface using the code V simulator. The proposed integrated two-channel optical transmitter has two VCSELs attached in parallel on an 8-pin TO-CAN package, on top of which is a lens filter block ($1mm{\times}2mm{\times}4mm$) composed of hemispherical lenses and WDM filters. Considering two-channel transmitters manufactured with wavelength combinations of 1060nm/1270nm and 1330nm/1550nm, we obtain the optimum value of the diameter of the hemispherical lens as 0.6 mm for both combinations, and the distances L between the lens filter block and ball lens as 1.7 mm and 2.0 mm for the 1060nm/1270nm and 1330nm/1550nm wavelength combinations, respectively. At this time, the focal length f0 of the lens filter blocks for wavelengths of 1060, 1270, 1330, and 1550 nm are 0.351, 0.354, 0.355, and 0.359 mm, respectively, and the focal lengths F of light passing through the lens filter block and ball lens are 0.62 mm for 1060nm/1270nm and 0.60-0.66 mm for 1330nm/1550nm wavelength combinations.

Optical Transceiver Module for Next-generation Automotive Optical Network, MOST1000 (차세대 자동차 광네트워크 MOST1000 용 광트랜시버 모듈)

  • Kim, Gye Won;Hwang, Sung Hwan;Lee, Woo-Jin;Kim, Myoung Jin;Jung, Eun Joo;An, Jong Bea;Kim, Jin Hyeok;Moon, Jong Ha;Rho, Byung Sup
    • Korean Journal of Optics and Photonics
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    • v.24 no.4
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    • pp.196-200
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    • 2013
  • Heretofore, it was enough that most of optical transceiver modules for automotive networks have the performance of data rate from 10 Mbps to 150 Mbps. As the required data rate in automotive infotainment systems has recently been increasing, the development of a new optical transceiver having high speed data rate over 1Gbps is now required. Therefore, we suggested a next-generation bi-directional optical transceiver module using vertical cavity surface emitting laser technology and plastic clad fiber technology, for the next-generation automotive optical network, MOST1000. We fabricated the high-speed and compact optical transceiver having 1 Gbps data rate and -22 dBm sensitivity satisfying bit error rate $10^{-12}$.

Propagation Characteristics and Tolerance Analysis of Optical Wires in Flexible Optical PCB by Ray Tracing (연성 광 PCB용 광 배선의 손실특성 및 제작 공차 분석)

  • Yeom, Jun-Cheol;Park, Dae-Seo;Kim, Young-Seok;Kim, Dae-Chan;Park, Se-Geun;O, Beom-Hoan;Lee, El-Hang;Lee, Seung-Gol;Jeon, Keum-Soo
    • Korean Journal of Optics and Photonics
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    • v.19 no.4
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    • pp.255-261
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    • 2008
  • In this study, the propagation characteristics and the fabrication tolerance of an optical wire in a flexible optical PCB were analyzed by using a ray-tracing method. It is found from the analysis that the sidewall angle of a core should be controlled within $1^{\circ}$ in order to maintain the propagation loss to less than -1 dB/mm, and that the bending radius of the optical wire should be larger than 5 mm in order to suppress the bending loss below -1 dB. In addition, it is confirmed that the lateral misalignment of ${\pm}15\;{\mu}m$, and the angular tilting of VCSEL of $6^{\circ}$ are allowable for the coupling loss of -1 dB.

Spatially-resolved Photoluminescence Studies on Intermixing Effect of InGaAs Quantum Dot Structures Formed by AlAs Wet Oxidation and Thermal Annealing (AlAs 습식산화와 열처리로 인한 InGaAs 양자점 레이저 구조의 Intermixing효과에 관한 공간 분해 광학적 특성)

  • Hwang J.S.;Kwon B.J.;Kwack H.S.;Choi J.W.;Choi Y.H.;Cho N.K.;Cheon H.S.;Cho W.C.;Song J.D.;Choi W.J.;Lee J.I.
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.201-208
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    • 2006
  • Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.