• Korean Journal of Clinical Laboratory Science
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• v.50 no.3
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• pp.267-274
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• 2018

Posterior canal benign paroxysmal positional vertigo (PCBPPV) is the most common disease among patients who visited the st. Carollo hospital dizziness center with the head suddenly feeling rolling or rotational dizziness caused by head and body movements. Most patients showed improvements in symptoms after a single treatment. On the other hand, there are more causes requiring multiple treatments. This study examined the factors affecting the canalithiasis repositioning maneuver for symptom recovery of dizziness, which is posterior BPPV. Dizziness patients who visited the dizziness center of PCBPPV were classified. From March 2008 to November 2010, the cure rate of 165 posterior BPPVs patients was investigated. The success rate after the first, second, third, and further treatments was 57.6%, 17.6%, 10.3%, and 14.5%, respectively. The factors affecting treatment of PCBPPVs included traumatic, medical disease, cerebral infarction, small vessel disease, vestbro basilar artery insufficiency (VBI), cerebrovascular disease, brain disease, and vestibuloplasty (P<0.05). Vomiting, nausea, and syncope can be treated easily by considering the factors affecting these treatments. If the related diseases are combined with the treatment of the canalithiasis repositioning maneuver for symptom recovery of dizziness, the results will show an improvement in daily life that is free from painful dizziness.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.136-142
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• 1997

An/n-GaAs(100) Schottky barrier diode has been investigated by using electoreflectance(ER). From the observed Franz-Keldysh oscillatins(FKO), the internal electric field(Ei) of the sample is $5.76\times 10^{4}$V/cm at 300 K. As the modulation voltage($V_{ac}$) IS changed, the line shape of ER signal does not change but its amplitude various linerly. For increasing forward and reverse dc bias boltage($V_{bias}$), the amplitude of ER signal decreases. The internal electric field decreased from $19.3\times 10^4\sim4.39\times10^4$V/cm as $V_{bias}$ INCREASES FROM -5.0 V TO 0.6 V. For Au/n-GaAs the valve of built-in voltage($V_{bi}$) determined from the plot of $V_{bias}$ versus $E_i^2$ is 0.70 V. This value agrees with that observed in the plot of $V_{bias}$ versus amplitude of FKO peak. In addition, the carrier concentraion(N) and potential barrier($\Phi$) of the sample at 300 K are found to be about $2.4\times 10^{16}\textrm{cm}^{-3}$ and 0.78 eV, respectively.