• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.467-471
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• 2001

DC accelerated aging characteristics of $Pr_{6}O_{11}$-based ZnO varistors, which are composed of $ZnO+Pr_{6}O_{11}+CoO+Cr_{2}O_{3}+Dy_{2}O_{3}$ ceramics were investigated with CoO content in the range of 0.5 - 5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and +288.79%, respectively, under DC accelerated aging stress, such as $(0.85V_{lmA}/115^{\circ}C/24h)+(0.90V_{lmA}120^{\circ}C/24h)+(0.95V_{lmA}/125^{\circ}C/24h)+(0.95V_{lmA}/150^{\circ}C/24h)$. Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.467-471
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• 2001

DC accelerated aging characteristics of Pr$_{6}$O$_{11}$-based ZnO varistors, which are composed of ZnO+Pr$_{6}$O$_{11}$+CoO+Cr$_2$O$_3$+Dy$_2$O$_3$ ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and 288.79%, respectively, under DC accelerated aging stress, such as (0.85 V$_{1mA}$/115$^{\circ}C$/24h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/24h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/24h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/24h). Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability,ity,ability,ity,

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Proceedings of the SAREK Conference
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• 2008.11a
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• pp.363-368
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• 2008

Nitrogen oxides (NO, $NO_2$ and $N_2O$) have been controlled effectively by the SCR catalysts coated on monolith or honeycomb in commercial sites with ammonia as reductant at high temperature range $300{\sim}400^{\circ}C$. However, the catalytic filter has much merit on the point of controlling the particles and nitrogen oxides simultaneously. It will be more advanced-system if the catalytic working temperature is reduced to the normal filtration temperature of under $200^{\circ}C$. This study has focus on the development of the catalytic filter working at the low temperature. So the additive effect of the components such as Pt and Mn (which are known the catalytic component of $V_2O_5/TiO_2$ was investigated. The $V_2O_5-WO_3$ catalytic filter exhibited high activity and selectivity at $250{\sim}320^{\circ}C$ showing more than 95% NO conversion for the treatment of 600 ppm NO at face velocity 2 cm/s. The Pt-$V_2O_5-WO_3$ catalytic filter shifted the optimum working temperature towards the lower temperature ($170{\sim}200^{\circ}C$). And NO conversion was 100% and higher than that of $V_2O_5-WO_3$ catalyst at $250{\sim}320^{\circ}C$. The $MnO_X-V_2O_5-WO_3$ catalytic filter showed the wide temperature range of $220{\sim}330^{\circ}C$ for more than 95% NO conversion. This is a remarkable advantage when considered the $MnO_X$ catalytic filter presents the maximum activity at $150{\sim}250^{\circ}C$ and $V_2O_5-WO_3$ catalytic filter shows the maximum activity at $250{\sim}320^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of the Korean institute of surface engineering
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• v.25 no.6
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• pp.293-298
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• 1992

Various vanadium-oxide thin films were deposited by e-beam and thermal evaporation of V2O5, V2O3, and VO2 powders. Films with thickness of $2000\AA$ were subjected to annealing at $300^{\circ}C$~$450^{\circ}C$ in N2 atmosphere for the crystallization and desification purposes. For the films deposited from V2O5 and VO2 sources, sources, Magneli (VnO2n-1$ 4\leq$ $n\leq$ 8) and VO2 phase appeared at $300^{\circ}C$, respectively, but VO2 phase also transformed into Magneli phase at $450^{\circ}C$ by severe reduction. On the contrary, VO2/VO mixed phases resulted from congruent evaporation of V2O3 unchanged after the same annealing treatment due to the balanced reduction and oxidation of VO2 and VO whcih have different equilibrium O2 pressures. It is suggested that the annealing in the controlled oxidation atmosphere or the deposition using mixed oxide sources are necessary to get the film containing VO2 phase.

• Journal of Korean Society for Atmospheric Environment
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• v.6 no.1
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• pp.31-42
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• 1990

In order to suggest an efficient catalyst systems for NOx reduction of flue gases from industrial boilers, $TiO_2$ supported $WO_3-V_2O_5, V_2O_5$ and $WS_2$ catalysts were tested for the performances of NOx reduction at high reactin temperature range (250-500$^\circ$C) using a simulated flue gas system. It was found that while the proposed $WO_3/TiO_2$ and $WO_3-V_2O_5/TiO_2$ catalysts showed a significant high NOx reduction efficiency at about 350-400$^\circ$C, the conventional commercial catalyst of $V_2O_5/TiO_2$ showed a significant drop in NOx reduction efficiency due to the excessive $NH_3$ oxidation. From the measurement of surface acidities of those catalysts, it was found that the acidity are well correlated with the activities of NOx reduction. The reason of high activity of $WO_3$ series catalysts at high reaction temperature seems due to the low value of surface excess oxygen compared with that of $V_2O_5/TiO_2$ seems equivalent to the acid site of that catalyst.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.