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Assessment of Fuzzy Measure Possibility for the Electromagnetic Field according to Voltage fluctuation of the Jechon Area (제천지역 전압변동에 따른 전자계에 대한 퍼지척도 가능성 평가)

  • Kim, Sang-Chul
    • Journal of the Korean Society of Safety
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    • v.20 no.2 s.70
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    • pp.50-55
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    • 2005
  • This Paper Presents assessment of fuzzy measure Possibility far the electromagnetic field according to voltage fluctuation of the Jechon Area. To cope with substantial electromagnetic analysis, the safety assessment were analyzed the double 154kV T/L, 345kV T/L, Jechon-Ichon Jechon-Youngju, respectively. As the results of case study, in case of 345kV T/L, the electric field value was 11.4927kV/m, magnetic field value was 0.4622G at the Point about 7m away from the line in severest case. Tn assessment of fuzzy measure Possibility for the electromagnetic field, this paper use probability of fuzzy and measure of fuzziness technique.

Removal of Total Phosphate by Bipolar Packed Bed Electrolytic Cell (충전복극전해조에 의한 총 인 제거)

  • Kim, Eun-Hee;Park, Seung-Cho
    • Applied Chemistry for Engineering
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    • v.19 no.4
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    • pp.366-369
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    • 2008
  • To evaluate the performance of a bipolar packed bed cell (BPBC) filled with granular aluminium, the experiments were carried out in two groups as batch and continuous processes. In a batch process, removal efficiency of total phosphate (T-P) was 88% in case of electrolytic treatment of phosphate solution, T-P 10 mg/L at 6 V during 3 h by BPBC filled with granular aluminium. In a continuous process, residual T-P concentration was about 2 mg/L in case of electrolytic treatment of phosphate solution, 10 mg/L at 6 V, HRT 3 h by BPBC filled with granular aluminium. Break-through point was observed after running for 120 h at hydraulic retention time (HRT) of 3 h.

EXISTENCE OF SOLUTIONS FOR FRACTIONAL p&q-KIRCHHOFF SYSTEM IN UNBOUNDED DOMAIN

  • Bao, Jinfeng;Chen, Caisheng
    • Bulletin of the Korean Mathematical Society
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    • v.55 no.5
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    • pp.1441-1462
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    • 2018
  • In this paper, we investigate the fractional p&q-Kirchhoff type system $$\{M_1([u]^p_{s,p})(-{\Delta})^s_pu+V_1(x){\mid}u{\mid}^{p-2}u\\{\hfill{10}}={\ell}k^{-1}F_u(x,\;u,\;v)+{\lambda}{\alpha}(x){\mid}u{\mid}^{m-2}u,\;x{\in}{\Omega}\\M_2([u]^q_{s,q})(-{\Delta})^s_qv+V_2(x){\mid}v{\mid}^{q-2}v\\{\hfill{10}}={\ell}k^{-1}F_v(x,u,v)+{\mu}{\alpha}(x){\mid}v{\mid}^{m-2}v,\;x{\in}{\Omega},\\u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}{\subset}{\mathbb{R}}^N$ is an unbounded domain with smooth boundary ${\partial}{\Omega}$, and $0<s<1<p{\leq}q$ and sq < N, ${\lambda},{\mu}>0$, $1<m{\leq}k<p^*_s$, ${\ell}{\in}R$, while $[u]^t_{s,t}$ denotes the Gagliardo semi-norm given in (1.2) below. $V_1(x)$, $V_2(x)$, $a(x):{\mathbb{R}}^N{\rightarrow}(0,\;{\infty})$ are three positive weights, $M_1$, $M_2$ are continuous and positive functions in ${\mathbb{R}}^+$. Using variational methods, we prove existence of infinitely many high-energy solutions for the above system.

Fiber Fabry-Perot type Optical Current Transducer with Frequency Ramped Signal Processing Scheme

  • Park, Youn-Gil;Seo, Wan-Seok;Lee, Chung-E.;Taylor, Henry-F.
    • Journal of the Optical Society of Korea
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    • v.2 no.2
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    • pp.74-79
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    • 1998
  • The use of a fiber Fabry-Perot interferometer (FFPI) as an optical current transducer is demonstrated. A conventional inductive pickup coil converts the time-varying current I(t) being measured to a voltage waveform V(t) applied across a piezeolectric strip to which the FFPI is bonded. The strip experiences a longitudinal expansion and contraction, resulting in an optical phase shift ${\phi}(t)$ in the fiber proportional to V(t). This phase shift is measured using a frequency-modulated semiconductor light source, photodiodes to monitor the reflected light from the FFPI and the laser power, and a digital signal processor. Calibration routines compute V(t) and I(t) from the measured phase shift at a l KHz rate. Response to 60 Hz ac over the design range 0-1300A rms is characterized Transient response of the FFPI transducer is also measured.

Iron Core Design of 3-Phase 40MVA HTS Power Transformer Considering Voltages per Turn

  • Lee, Chan-joo;Seok, Bok-yeol
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.4B no.2
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    • pp.54-58
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    • 2004
  • This paper presents the iron core design method of a high temperature superconducting (HTS) transformer considering voltages per turn (V/T). In this research, solenoid type HTS coils were selected for low voltage (LV) winding and double pancake coils for high voltage (HV) winding, just as in conventional large power transformers. V/T is one of the most fundamental elements used in designing transformers, as it decides the core cross sectional area and the number of primary and secondary winding turns. By controlling the V/T, the core dimension and core loss can be changed diversely. The leakage flux is another serious consideration in core design. The magnetic field perpendicular to the HTS wire causes its critical current to fall rapidly as the magnitude of the field increases slowly. Therefore in the design of iron core as well as superconducting windings, contemplation of leakage flux should be preceded. In this paper, the relationship between the V/T and core loss was observed and also, through computational calculations, the leakage magnetic fields perpendicular to the windings were found and their critical current decrement effects were considered in relation to the core design. The % impedance was calculated by way of the numerical method. Finally, various models were suggested.

Growth and effect of thermal annealing for $AgGaSe_2$ single crystal thin film by hot wall epitaxy (Hot wall epitaxy(HWE)법에 의한 $AgGaSe_2$ 단결정 박막 성장과 열처리 효과)

  • Baek, Seung-Nam;Hong, Kwang-Joon;Kim, Jang-Bok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.5
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    • pp.189-197
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    • 2006
  • A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

Interactive Effect of Nitrogen and Sulphur on Yield and Quality of Groundnut (Arachis hypogea L.)

  • Jamal Arshad;Fazli Inayat Saleem;Ahmad Saif;Abdin Malik Zainul
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.51 no.6
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    • pp.519-522
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    • 2006
  • Randomized field experiments were conducted to study the interactive effect of sulphur (S) and nitrogen (N) on seed, oil and protein yield of two cultivars of groundnut {Arachis hypogea: cv Amber $(V_{1})$: cv Kaushal, $(V_{2})$.} Two dosage levels of sulphur ($0\;and\;20kg\;ha^{-1}$) and two dosage levels of N ($23.5\;and\;43.5kg\;ha^{-1}$) in various combinations were tested as micronutrient treatments, $T_{1},\;T_{2},\;and\;T_{3}$. Results indicated significant enhancement of the yield components namely seed and oil yield as well as seed protein. Maximum response was observed with treatment $T_{3}$(having 20kg S and 43.5kg N $ha^{-1})$. Increase in seed and oil yields of 90% and 103% in $V_{1}$, and 79 and 90% in $V_{2}$, respectively were recorded as compared to the control treatment $T_{1}$(having 0kg S and 23.5kg N $ha^{-1}$). Effect of S and N interaction was observed on protein, N and S content in seeds. The results obtained by these experiments clearly suggest that judicious balanced application of N and S could improve the yield.

ON ALMOST PSEUDO-VALUATION DOMAINS, II

  • Chang, Gyu Whan
    • Korean Journal of Mathematics
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    • v.19 no.4
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    • pp.343-349
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    • 2011
  • Let D be an integral domain, $D^w$ be the $w$-integral closure of D, X be an indeterminate over D, and $N_v=\{f{\in}D[X]{\mid}c(f)_v=D\}$. In this paper, we introduce the concept of $t$-locally APVD. We show that D is a $t$-locally APVD and a UMT-domain if and only if D is a $t$-locally APVD and $D^w$ is a $PvMD$, if and only if D[X] is a $t$-locally APVD, if and only if $D[X]_{N_v}$ is a locally APVD.

Evaluation of Parameters of Gas Exchange During Partial Liquid Ventilation in Normal Rabbit Lung (토끼의 정상 폐 모델에서 부분액체환기 시 가스교환에 영향을 주는 인자들에 대한 연구)

  • An, Chang-Hyeok;Koh, Young-Min;Park, Chong-Wung;Suh, Gee-Young;Koh, Won-Jung;Lim, Sung-Yong;Kim, Cheol-Hong;Ahn, Young-Mee;Chung, Man-Pyo;Kim, Ho-Joong;Kwon, O-Jung
    • Tuberculosis and Respiratory Diseases
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    • v.52 no.1
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    • pp.14-23
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    • 2002
  • Background: The opitmal ventilator setting during partial liquid ventilation(PLV) is controversial. This study investigated the effects of various gas exchange parameters during PLV in normal rabbit lungs in order to aid in the development of an optimal ventilator setting during PLV. Methods: Seven New-Zealand white rabbits were ventilated in pressure-controlled mode with the following settings; tidal volume($V_T$) 8 mL/kg, positive end-expiratory pressure(PEEP) 4 $cmH_2O$, inspiratory-to-expiratory ratio(I:E ratio) 1:2, fraction of inspired oxygen($F_TO_2$) 1.0. The respiration rate(RR) was adjusted to keep $PaCO_2$ between 35~45 mmHg. The ventilator settings were changed every 30 min in the following sequence : (1) Baseline, as the basal ventilator setting, (2) Inverse ratio, I:E ratio 2:1, (3) high PEEP, adjust PEEP to achieve the same mean inspiratory pressure (MIP) as in the inverse ratio, (4) High $V_T$, $V_T$ 15 mL/kg, (5) high RR, the same minute ventilation (MV) as in the High $V_T$. Subsequently, the same protocol was repeated after instilling 18 mL/kg of perfluorodecalin for PLV. The parameters of gas exchange, lung mechanics, and hemodynamics were examined. Results: (1) The gas ventilation(GV) group showed no significant changes in the $PaO_2$ at all phases. The $PaCO_2$ was lower and the pH was higher at the high $V_T$ and high RR phases(p<0.05). No significant changes in the lung mechanics and hemodynamics parameters were observed. (2) The baseline $PaO_2$ for the PLV was $312{\pm}$ mmHg. This was significantly lower when decreased compared to the baseline $PaO_2$ for GV which was $504{\pm}81$ mmHg(p=0.001). During PLV, the $PaO_2$, was significantly higher at the high PEEP($452{\pm}38$ mmHg) and high $V_T$ ($461{\pm}53$ mmHg) phases compared with the baseline phase. However, it did not change significantly during the inverse I:E ratio or the high RR phases. (3) The $PaCO_2$ was significantly lower at high $V_T$ and RR phases for both the GV and PLV. During the PLV, $PaCO_2$ were significantly higher compared to the GV (p<0.05). (4) There were no important or significant changes in of baseline and high RR phases lung mechanics and hemodynamics parameters during the PLV. Conclusion: During PLV in the normal lung, adequate $V_T$ and PEEP are important for optimal oxygenation.

Growth and effect of thermal annealing for $AgGaS_2$ single crystal thin film by hot wall epitaxy (Hot wall epitaxy(HWE)법에 의한 $AgGaS_2$ 단결정 박막 성장과 열처리 효과)

  • Moon Jongdae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.1
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    • pp.1-9
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    • 2005
  • A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.