• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.1
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• pp.143-152
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• 2013

Given weighted graph G=(V,E), n=|V|, m=|E|, the minimum cut problem is classified with source s and sink t or without s and t. Given undirected weighted graph without s and t, Stoer-Wagner algorithm is most popular. This algorithm fixes arbitrary vertex, and arranges maximum adjacency (MA)-ordering. In the last, the sum of weights of the incident edges for last ordered vertex is computed by cut value, and the last 2 vertices are merged. Therefore, this algorithm runs $\frac{n(n-1)}{2}$ times. Given graph with s and t, Ford-Fulkerson algorithm determines the bottleneck edges in the arbitrary augmenting path from s to t. If the augmenting path is no more exist, we determine the minimum cut value by combine the all of the bottleneck edges. This paper suggests minimum cut algorithm for undirected weighted graph with s and t. This algorithm suggests MA-merging and computes cut value simultaneously. This algorithm runs n-1 times and successfully divides V into disjoint S and V sets on the basis of minimum cut, but the Stoer-Wagner is fails sometimes. The proposed algorithm runs more than Ford-Fulkerson algorithm, but finds the minimum cut value within n-1 processing times.

• Journal of the Optical Society of Korea
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• v.2 no.2
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• pp.74-79
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• 1998

The use of a fiber Fabry-Perot interferometer (FFPI) as an optical current transducer is demonstrated. A conventional inductive pickup coil converts the time-varying current I(t) being measured to a voltage waveform V(t) applied across a piezeolectric strip to which the FFPI is bonded. The strip experiences a longitudinal expansion and contraction, resulting in an optical phase shift ${\phi}(t)$ in the fiber proportional to V(t). This phase shift is measured using a frequency-modulated semiconductor light source, photodiodes to monitor the reflected light from the FFPI and the laser power, and a digital signal processor. Calibration routines compute V(t) and I(t) from the measured phase shift at a l KHz rate. Response to 60 Hz ac over the design range 0-1300A rms is characterized Transient response of the FFPI transducer is also measured.

• Bulletin of the Korean Mathematical Society
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• v.53 no.4
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• pp.1157-1169
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• 2016

We find the distributional solutions of the Wilson's functional equations $$u{\circ}T+u{\circ}T^{\sigma}-2u{\otimes}v=0,\\u{\circ}T+u{\circ}T^{\sigma}-2v{\otimes}u=0,$$ where $u,v{\in}{\mathcal{D}}^{\prime}({\mathbb{R}}^n)$, the space of Schwartz distributions, T(x, y) = x + y, $T^{\sigma}(x,y)=x+{\sigma}y$, $x,y{\in}{\mathbb{R}}^n$, ${\sigma}$ an involution, and ${\circ}$, ${\otimes}$ are pullback and tensor product of distributions, respectively. As a consequence, we solve the $Erd{\ddot{o}}s$' problem for the Wilson's functional equations in the class of locally integrable functions. We also consider the Ulam-Hyers stability of the classical Wilson's functional equations $$f(x+y)+f(x+{\sigma}y)=2f(x)g(y),\\f(x+y)+f(x+{\sigma}y)=2g(x)f(y)$$ in the class of Lebesgue measurable functions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.37-50
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• 2009

Evaluation results about area scaling capabilities of various SRAM margin-assist techniques for random $V_T$ variability issues are described. Various efforts to address these issues by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltage-supply for the cell terminal biasing and timing sequence controls of read and write are comprehensively compared in light of an impact on the required area overhead for each design solution given by ever increasing $V_T$ variation (${\sigma}_{VT}$). Two different scenarios which hinge upon the EOT (Effective Oxide Thickness) scaling trend of being pessimistic and optimistic, are assumed to compare the area scaling trends among various SRAM solutions for 32 nm process node and beyond. As a result, it has been shown that 6T SRAM will be allowed long reign even in 15 nm node if ${\sigma}_{VT}$ can be suppressed to < 70 mV thanks to EOT scaling for LSTP (Low Standby Power) process.

• Bulletin of the Korean Mathematical Society
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• v.56 no.5
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• pp.1117-1127
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• 2019

Let ${\mathcal{L}}_2=(-{\Delta})^2+V^2$ be the $Schr{\ddot{o}}dinger$ type operator, where nonnegative potential V belongs to the reverse $H{\ddot{o}}lder$ class $RH_s$, s > n/2. In this paper, we consider the operator $T_{{\alpha},{\beta}}=V^{2{\alpha}}{\mathcal{L}}^{-{\beta}}_2$ and its conjugate $T^*_{{\alpha},{\beta}}$, where $0<{\alpha}{\leq}{\beta}{\leq}1$. We establish the $(L^p,\;L^q)$-boundedness of operator $T_{{\alpha},{\beta}}$ and $T^*_{{\alpha},{\beta}}$, respectively, we also show that $T_{{\alpha},{\beta}}$ is bounded from Hardy type space $H^1_{L_2}({\mathbb{R}}^n)$ into $L^{p_2}({\mathbb{R}}^n)$ and $T^*_{{\alpha},{\beta}}$ is bounded from $L^{p_1}({\mathbb{R}}^n)$ into BMO type space $BMO_{{\mathcal{L}}1}({\mathbb{R}}^n)$, where $p_1={\frac{n}{4({\beta}-{\alpha})}}$, $p_2={\frac{n}{n-4({\beta}-{\alpha})}}$.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.9
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• pp.397-404
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• 2019

When developing a weapon system, a T&E(Test and Evaluation) can be performed using M&S for the test items that cannot be evaluated in the real world. In this case, the VV&A activities are required to prove the credibility of M&S for the T&E. Recently, the use of M&S has been increasing as the R&D trends of weapon systems are becoming more advanced. Therefore, the VV&A activities are also increasing. The VV&A activities aim to verify, validate, and accredit that the simulation can represent a real system and ensure credibility regarding its purpose and intention of use. VV&A activities are divided into V&V and Accreditation. When performing VV&A in the ADD (Agency for Defense Development), the V&V activities are performed by a separate department of the ADD and the accreditation activities are performed in the DTAQ (Defense Agency for Technology and Quality). This paper proposes a V&V process for a T&E of M&S that has been performed in ADD. The process is used to verify and validate the documents and data generated during the development process according to the accreditation criteria, and provides objective data that can be used to judge whether the accreditation decision and acceptance criteria are met.

• Korean Journal of Agricultural Science
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• v.11 no.1
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• pp.160-175
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• 1984

This study was carried out to analyze the effects of the revolution and forwarding speed of the rotary blade and the edge curves which were $30^{\circ}$ and $40^{\circ}$, on the power requirement of rotary tillage. In this study, the revolutions of the rotary blade considered were 204, 243, 285, 360 rpm, and the forwarding speeds of the rotary system considered were 29.40cm/sec, 46.93em/sec. The power requirements of rotary blade were measured by a dynamic strain gage systems at the soil bin which was filled with artificial soil. The results of the study were summarized as follows: 1. The response surface analysis showed that the revolution and forwarding speed of the rotary shaft had an interacting influence on the torque requirement of the rotary blade. The mathematical model developed by the above was repersented as follow. $$T=a_0+a_1V+a_2R +a_3VR+a_4VR^2$$ where, $a_0=constant$ $a_1,\;a_2,\;a_3,\;a_4=coefficients$ V=forwarding speed of the rotary system. (em/sec) R=revolution of the rotary shaft. (rpm) T=tilling torque requirement. (kg-m) 2. When the maximum tilling torque requirement was analyzed, ${\partial}T/{\partial}R$ was decreased with the increasing revolution of rotary shaft, while ${\partial}T/{\partial}V$ was increased, which was minimum at 200~220 rpm. When the forwarding speeds were increased, ${\partial}T/{\partial}R$ was decreased with increasing rate. 3. When the mean tilling torque requirement was analyzed, ${\partial}T/{\partial}V$ was constant at 320~360 rpm and ${\partial}T/{\partial}R$ was decreased with increasing rate along with the increasing revolution of rotary shaft. 4. When the mean tilling torgue requirement per unit volume of soil was analyzed, ${\partial}T/{\partial}V$ was minimum at 270~300 rpm. ${\partial}T/{\partial}R$ for the forwarding speeds of 29.40cm/sec and 46.93cm/sec was same as that for 280~290 rpm. 5. Increasing the edge curves of the rotary blades, the tilling torque requirement was increased. But other studies showed that the smaller the edge curve, the more straw could be wrapped on blades which resulted in increasing torque requirements. Therefore, the edge curve of rotary blade should be considered for the future study.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.222-223
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• 2011

본 논문은 인천지역 345kV 계통고장전류 저감을 위한 한류리액터 설치에 따른 362kV 50kA 차단기의 과도회복 전압 정격 초과 여부를 EMTP을 활용하여 검토하였다. 과도회복전압(TRV : Transient Recovery Voltage)은 크게 두가지, 최대전압(Vp)과 초기과도회복전압상승율(RRRV:Rate of Rise of Recovery Voltage)로 구분하며, 리액턴스 성분이 증가하며 RRRV가 상승하여 차단기가 고장전류을 차단시 절연파괴(열파괴)로 이어질 수 있다. IEC 62271-100 규정에는 RRRV를 정격차단전류의 100% 크기(T100%) 차단시 2kV/us이내로 규정하고 있으며 이 보다 작은 전류의 T90, T75 차단시의 규정치는 계산식에 의해 정해진다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.157-157
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• 2003

수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.