• Journal of applied mathematics & informatics
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• v.31 no.5_6
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• pp.695-709
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• 2013

Calcium is well known role for signal transduction in a neuron cell. Various processes and parameters modulate the intracellular calcium signaling process. A number of experimental and theoretical attempts are reported in the literature for study of calcium signaling in neuron cells. But still the role of various processes, components and parameters involved in calcium signaling is still not well understood. In this paper an attempt has been made to develop two dimensional finite element model to study calcium diffusion in neuron cells. The JRyR, JSERCA and JLeak, the exogenous buffers like EGTA and BAPTA, and diffusion coefficients have been incorporated in the model. Appropriate boundary conditions have been framed. Triangular ring elements have been employed to discretized the region. The effect of these parameters on calcium diffusion has been studied with the help of numerical results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.713-719
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.720-725
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.3
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• pp.106-114
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• 2003

The pressure ripple in the delivery port is caused by flow ripple, which is induced by variation of pumping chamber volume. The other reason is the reverse flow from the outlet volume produced by pressure difference between pumping chamber and outlet volume, when the pumping chamber is connected with the outlet volume. In this study, a mathematical model is presented for analyzing discharge pressure ripple, which includes vane detachment, cam ring movement , and fluid inertia effects in V-groove in the side plate. From the analysis and experiment, it was found that V-groove on the side plate, coefficient of spring supporting the cam ring, and average discharge pressure are the main factors of discharge pressure ripple in variable displacement vane pump. The theoretical results, provided in this study, were well agreed with experimental results. The analytical model to estimate the magnitude of pressure ripple in this study is expected to be used f3r the optimal design of the variable displacement vane pump.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1680-1682
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• 2007

The integrated circuits such as inverters, ring oscillators, NAND and NOR gates, and rectifiers were fabricated on PEN substrate by using pentacene TFTs. The OTFTs used bottom contact structure and produced the average mobility of $0.26\;cm^2/V.sec$ and on/off current ratio of $10^5$. All circuits worked successfully like the simulation results. Especially, the rectifier was able to operate up to 1 MHz input signals, and ring oscillator exhibited oscillation frequency of 1MHz at-40V.

• ETRI Journal
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• v.34 no.4
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• pp.518-526
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• 2012

This paper proposes LC voltage-controlled oscillator (VCO) phase-locked loop (PLL) and ring-VCO PLL topologies with low-phase noise. Differential control loops are used for the PLL locking through a symmetrical transformer-resonator or bilaterally controlled varactor pair. A differential compensation mechanism suppresses out-band spurious tones. The prototypes of the proposed PLL are implemented in a CMOS 65-nm or 45-nm process. The measured results of the LC-VCO PLL show operation frequencies of 3.5 GHz to 5.6 GHz, a phase noise of -118 dBc/Hz at a 1 MHz offset, and a spur rejection of 66 dBc, while dissipating 3.2 mA at a 1 V supply. The ring-VCO PLL shows a phase noise of -95 dBc/Hz at a 1 MHz offset, operation frequencies of 1.2 GHz to 2.04 GHz, and a spur rejection of 59 dBc, while dissipating 5.4 mA at a 1.1 V supply.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.131-138
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• 1993

The Project of a superconducting asymmetric multipole wiggler in the 1.5GeV electron storage ring DELTA is in progress. In this work, the influences of nonlinear effects due to the this insertion device are investigated. The standard lattice is tolerable on the beam dynamics problems for all errors which are considered in our work.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.359-359
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• 2011

Many research applications in basic sciences and biology such as protein crystallography require hard x-rays in the range of 3-20 keV with high brightness. A medium energy storage ring as PLS-II with a beam energy of 3 GeV can meet such high photon energies. In-vacuum undulators (IVU) with a period length of 20 mm and a peak field of 0.97 T are used in the PLS-II ring to produce such X-rays in the fundamental or higher harmonics. Due to the many poles and high fields, insertion devices like wigglers and undulators have a significant impact on the stability of the electron beam with potential degradation of beam quality and life time. Therefore, nonlinear fields must be determined by measurement and evaluated as to their impact on beam stability. Specifically, transverse field roll-off can be a serious detriment to injection in top-up mode and must be corrected. We use magnetic field measurement data to evaluated beam stability by tracking particles using an explicit symplectic integrator in both, transverse and longitudinal planes.

• Honam Mathematical Journal
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• v.42 no.3
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• pp.591-600
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• 2020

A module M is called ss-semilocal if every submodule U of M has a weak supplement V in M such that U∩V is semisimple. In this paper, we provide the basic properties of ss-semilocal modules. In particular, it is proved that, for a ring R, _RR is ss-semilocal if and only if every left R-module is ss-semilocal if and only if R is semilocal and Rad(R) ⊆ Soc(RR). We define projective ss-covers and prove the rings with the property that every (simple) module has a projective ss-cover are ss-semilocal.

• Communications of the Korean Mathematical Society
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• v.38 no.1
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• pp.1-9
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• 2023

An le-module M over a commutative ring R is a complete lattice ordered additive monoid (M, ⩽, +) having the greatest element e together with a module like action of R. This article characterizes the le-modules _RM such that the pseudo-prime spectrum X_M endowed with the Zariski topology is a Noetherian topological space. If the ring R is Noetherian and the pseudo-prime radical of every submodule elements of _RM coincides with its Zariski radical, then X_M is a Noetherian topological space. Also we prove that if R is Noetherian and for every submodule element n of M there is an ideal I of R such that V (n) = V (Ie), then the topological space X_M is spectral.