• 제목/요약/키워드: V/S Ratio

검색결과 1,373건 처리시간 0.035초

Negative Bias Stress Effect with Offset Structure in Poly-Si TFT's (Offset 구조 Poly-Si TFT의 Negative Bias Stress 효과)

  • 이제혁;변문기;임동규;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.141-144
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    • 1998
  • The electrical characteristics of poly-Si TFT's with offset structure by negative bias stress are systematically investigated as a function of offset length. The changes of electrical characteristics, V$\_$th/, off-current, on/off ratio, in the offset structured poly-Si TFT's are smaller than that of the conventional structured poly-Si TFT's under the stress condition (V$\_$ds/=20V, V$\_$gs/=-20V). It is found that the hot carrier effect by negative bias stress is suppressed by the offset structured poly-Si TFT's because the local electric field near the drain region is decreased by offset region.

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Structural and optical properties of $CuInS_2$ thin films fabricated by electron-beam evaporation (전자빔 증착으로 제조한 $CuInS_2$ 박막의 구조적 및 광학적 특성)

  • Park, Gye-Choon;Jeong, Woon-Jo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.193-196
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    • 2001
  • Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

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Structural and optical properties of $CuInS_2$ thin films fabricated by electron-beam evaporation (전자빔 층착으로 제조한 $CuInS_2$ 박막의 구조적 및 광학적 특성)

  • 박계춘;정운조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.193-196
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    • 2001
  • Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

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Optical proper of S solute CuInSe$_2$ thin film (S를 고용한 CuInSe$_2$ 박막의 광학 특성)

  • 김규호;이재춘;김민호;배인호
    • Journal of Surface Science and Engineering
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    • 제30권2호
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    • pp.136-143
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    • 1997
  • The photvoltaic power system has received considerable attention as the petroleumalterative energies to the environmental problems in the wored scale. $CuLnSe_2$is one ofthe most promising materials for the fabrication of large-area modules and low cost photovoltaic devices. Sulfur solute CuInSe2 thin films were prepared by RF sputtering using powder targer which were previously compacted by powder of $Cu_2Se, \;In_2Se_3, \;Cu_2S, \;and\;In_2S_3$ in various ratios. The results induicated that the sulfur ratio, the(112) texture, and the energy band gap were increased by the increase of the S/(S+Se) that was controlled by stoichiometric compound. The energy band gap can be shifted from 1.04eV to 1.50eV by abjusting the S/(S+Se) ratio, which maich it possible to obtain perfect match to the solar spectrum.

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Design of Low Power LTPS AMOLED Panel and Pixel Compensation Circuit with High Aperture Ratio (고 개구율 화소보상회로를 갖는 저전력 LTPS AMOLED 패널 설계)

  • Kang, Hong-Seok;Woo, Doo-Hyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • 제47권10호
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    • pp.34-41
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    • 2010
  • We proposed the new pixel compensation circuit with high aperture ratio and the driving method for the large-area, low-power AMOLED applications in this study. We designed with the low-temperature poly-silicon(LTPS) thin film transistors(TFTs) that has poor uniformity but good mobility and stability. To lower the error rate of the pixel circuit and to improve the aperture ratio for bottom emission method, we simplified the pixel compensation circuit. Because the proposed pixel compensation circuit with high aperture ratio has very low contrast ratio for conventional driving methods, we proposed the new driving method and circuit for high contrast ratio. Black data insertion was introduced to improve the characteristics for moving images. The pixel circuit was designed for 19.6" WXGA bottom-emission AMOLED panel, and the average aperture ratio of the pixel circuit is improved from 33.0% to 41.9%. For the TFT's $V_{TH}$ variation of ${\pm}0.2\;V$, the non-uniformity and contrast ratio of the designed panel was estimated under 6% and over 100000:1 respectively.

Seismic base isolation of precast wall system using high damping rubber bearing

  • Tiong, Patrick L.Y.;Adnan, Azlan;Rahman, Ahmad B.A.;Mirasa, Abdul K.
    • Earthquakes and Structures
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    • 제7권6호
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    • pp.1141-1169
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    • 2014
  • This study is aimed to investigate the seismic performance of low-rise precast wall system with base isolation. Three types of High Damping Rubber Bearing (HDRB) were designed to provide effective isolation period of 2.5 s for three different kinds of structure in terms of vertical loading. The real size HDRB was manufactured and tested to obtain the characteristic stiffness as well as damping ratio. In the vertical stiffness test, it was revealed that the HDRB was not an ideal selection to be used in isolating lightweight structure. Time history analysis using 33 real earthquake records classified with respective peak ground acceleration-to-velocity (a/v) ratio was performed for the remaining two types of HDRB with relatively higher vertical loading. HDRB was observed to show significant reduction in terms of base shear and floor acceleration demand in ground excitations having a/v ratio above $0.5g/ms^{-1}$, very much lower than the current classification of $0.8g/ms^{-1}$. In addition, this study also revealed that increasing the damping ratio of base isolation system did not guarantee better seismic performance particularly in isolation of lightweight structure or when the ground excitation was having lower a/v ratio.

Effect on the Growth of Pllioblastus pygmaed and Soil Characteristics as Affected by Difference of Soil Thickness and Soil Mixture Ratio in the Shallow-Extensive Green Roof Module System (저관리 옥상녹화 모듈에서 토심, 배합비의 차이가 토양의 특성 및 흰줄무늬사사의 생육에 미치는 영향)

  • Park, Je-Hea;Ju, Jin-Hee;Yoon, Yong-Han
    • Journal of Environmental Science International
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    • 제19권7호
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    • pp.871-877
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    • 2010
  • The objectives of this study were to compare growth of Pllioblastus pygmaed and soil characteristics as affected by difference of soil thickness and mixture ratio in shallow-extensive green roof module system, and to identify the level of soil thickness and mixture as suitable growing condition to achieve the desired plants in green roof. Different soil thickness levels were achieved under 15cm and 25cm of shallow-extensive green roof module system that was made by woody materials for $500{\times}500{\times}300mm$. Soil mixture ratio were three types for perlit: peatmoss: leafmold=6:2:2(v/v/v, $P_6P_2L_2$), perlit: peatmoss: leafmold=5:3:2(v/v/v, $P_5P_3L_2$) and perlit: peatmoss: leafmold=4:4:2(v/v/v, $P_4P_4L_2$). On June 2006, Pllioblastus pygmaed were planted directly in a green roof module system in rows. All treatment were arranged in a randomized complete block design with three replication. The results are summarized below. In term of soil characteristics, Soil acidity and electric conductivity was measured in pH 6.0~6.6 and 0.12dS/m~0.19dS/m, respectively. Organic matter and exchangeable cations desorption fell in the order: $P_4P_4L_2$ > $P_5P_3L_2$ > $P_6P_2L_2$. $P_6P_2L_2$ had higher levels of the total solid phase and liquid phase, and $P_4P_4L_2$ had gas phase for three phases of soil in the 15cm and 25cm soil thickness. Although Pllioblastus pygmaed was possibled soil thickness 15cm, there was a trend towards increased soil thickness with increased leaf length, number of leaves and chlorophyll contents in 25cm. The growth response of Pllioblastus pygmaed had fine and sustain condition in order to $P_6P_2L_2$ = $P_5P_3L_2$ > $P_4P_4L_2$. However, The results of this study suggested that plants grown under $P_4P_4L_2$ appear a higher density ground covering than plants grown under $P_6P_2L_2$. Collectively, our data emphasize that soil thickness for growth of Pllioblastus pygmaed were greater than soil mixture ratio in shallow-extensive green roof module system.

Optimization of Batch Production of Chiral Phenyl Oxirane by Response Surface Analysis (반응표면분석법을 이용한 광학활성 phenyl oxirane의 회분식생산 최적화)

  • 김희숙;박성훈;이은열
    • Journal of Life Science
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    • 제13권6호
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    • pp.794-798
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    • 2003
  • Batch production of (S)-phenyl oxirane was investigated using epoxide hydrolase activity of Rhodosporidium toruloides SJ-4. Effect of reaction condition of asymmetric biohydrolysis of racemic phenyl oxirane was analyzed and optimized by response surface methodology. The optimal conditions of pH, temperature and DMSO cosolvent ratio were 7.4, $34^P\circ}C$, and 2.3%(v/v), respectively. The final yield was enhanced up to 67%, and reaction times required to reach 99% ee (enatiomeric excess) decreased down to 50% by response surface methodology Enantiopure (S)-phenyl oxirane with 100% enantiopurity and 24% yield (theoretical yield = 50%) was obtained from racemic substrate.

The Effect of Environmental Factor on the Survival of Marine Vibrio vulnificus (해양 Vibrio vulnificus의 생존에 미치는 환경적 요인의 영향)

  • 이봉헌;박흥재
    • Journal of Environmental Science International
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    • 제5권2호
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    • pp.179-185
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    • 1996
  • This study was conducted to investigate the effects of environmental factors such as temperature, salinity, pH, and UV light on-the survival of life-threatening Vibrio vulnificus. In the temperature range of 15 to $25^{\circ}C$, the numbers of V. vulnificus incieased during the 6-day incubation, but outside this range, the survival of V. vulnificus was poor. Incubation between 1 and $10^{\circ}C$ showed that V. vulnifcts survived poorly below $10^{\circ}C$. At sal:nities between 5 and 25ppt, the numbers of V. vulnificus increased or remained unchanged for 6-day. At salinities above this range, the numbers of V. vulnificus decreased. The optimal pH range was 6.5 to 8.0 and outside this range, the survival ratio of V. vulnificus was small. At 15-and $25^{\circ}C$, UV radiation was bactericidal for cultures of V, vulnificus. The counts of V. vulnificus were reduced approximately 10, 000-fold after 2h of UV light treatment at both temperatures. Above results mowed 1ha't environmental factors were effective on the survival of V. vulniucus in the environment.

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The Analysis of Dental Hospital Patients with Trigeminal Neuralgia (치과병원에 내원한 삼차신경통환자의 치험예 (34예 분석))

  • Kim, In-Jung;Choi, Jong-Hoon;Kim, Chong-Youl
    • Journal of Oral Medicine and Pain
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    • 제25권2호
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    • pp.235-240
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    • 2000
  • This study was carried out among 34 patients who visited Yonsei Dental Hospital from 1996. 1. to 1999. 5 for trigeminal neuralgia. By studying the patient's treatment prior to visiting our hospital, features of trigeminal neuralgia, treatment process of trigeminal neuralgia, prognosis of treatment, consultation with other professions and involvement of surgery, etc., the results are as follows: 1. 67.7% of onset age range from 40s to 60s, and average age is 50.2. 2. Ratio of right to left involvement is 1:2.1, male to female ratio is 1:1.9. 3. Occurrence rate of each branch is V3(44.1%), V2(11.8%), V1+V2+V3(11.8), V1+V2(8.8%). 4. Treatments prior to admission to our hospital are extraction(5.9%), endodontic treatment(5.9%), medication(11.8%), Oriental Medicine treatment(5.9%). 5. Routes of admittance to our hospital are by their preference(55.9%), local clinic referral(32.4%), E.N.T referral(5.9%), Neurology referral(5.9%). 6. 70.6% of patients treated at our hospital who were relieved of symptoms, were referred to Neurology(66.7%) and Pain Clinic(33.3%) for the reason of relapse, side effects of the drug itself, incomplete relief of pain. 7. 2 patients who were referred to medical part showed brain vessels contacting trigeminal nerve root on Brain MRangiography. But pain is being controlled by medication and no specific surgical procedure was carried out. The results show that 17.7% of patients admitted received inappropriate early treatment. In order to relieve tooth loss and patient's psychologic stress due to inappropriate treatment, precise differential diagnosis must be made among local teeth disease and idiopathic facial pain. Medication may show side effects of the drug itself, incomplete relief of pain or relapse of symptoms. Therefore, to treat trigeminal neuralgia appropriately by drug injection, surgery or radiation therapy, consultations among dentists, neurologists and anesthesiologists are required.

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