• Journal of radiological science and technology
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• 제33권3호
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• pp.253-260
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• 2010

The primary focus of this study was to explore the variation in dose distributions of electron beams between different types of construction structure of cut-out blocks embodied in electron cones, given that the structure is considered one of the causes of multiple scattered radiation from electrons which may affect dose distributions. For evaluation, two types of cut-out blocks, divergency and straight, manufactured for this study, were compared in terms of area of interval in distribution of dose, and flatness and symmetric state of surface being radiated. The results showed that divergency cut-out blocks reduced the lateral scattering effects on the thickness of cut-out blocks more substantially than straight ones, leading to more uniform dose distribution at baseline depth. Notably in divergency cut-out blocks, the high dose area decreased more significantly, and more uniform dose distribution was observed at the edge of the irradiated field. This points to a need to consider the characteristics of dose distribution of electron beams when setting up radiotherapy planing at the venues. Therefore, this study is significant as an exploratory work for ensuring high accuracy in dose delivery for patients.

• Proceedings of the KIEE Conference
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.56-59
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• 1988

The main purpose of Set-up control of hot strip mill plant is to obtain the most regular thickness. Then the learning or adaptive computer control in hot strip rolling mill has been developed. But it is very difficult to keep the inter-stands load distribution ratio uniform; so that the deviation of strip flatness is not avoidable. This leads to the degradation of quality of the products. In this report, an improved method base on the steepest descent method including the computation of optimum step size. This method is applied to the off-line simulation. In consequence, the better balances of inter-stands load distribution is achieved in addition to improvements of output thickness of hot strip mill in POSCO.

• Proceedings of the KSME Conference
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• 대한기계학회 2003년도 춘계학술대회
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제18권6호
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• pp.521-526
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• 2005

Within wafer non-uniformity(WIWNU) improves as the stiffness of pad decrease. We designed the pad groove to study of pad stiffness on WIWNU in Chemical mechanical polishing(CMP) and measured the pad stiffness according to groove width. The groove influences effective pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. An Increase of the apparent contact area of pad by groove width results in decrease of effective pad stiffness. WIWNU and profile of removal tate improved as effective pad stiffness decreased. Because grooving the pad reduce its effective stiffness and it makes slurry distribution to be uniform. Futhermore, it ensures that pad conforms to wafer-scale flatness variability. By grooving the top pad, it is possible to reduce its stiffness and hence reduce WIWNU and edge effect.

• Journal of the Semiconductor & Display Technology
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• 제13권3호
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• pp.21-25
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• 2014

The texturing is one of the most important processes for high efficiency crystalline silicon solar cells. The rear side flatness of silicon solar cell is very important for increasing the light reflectance and forming uniform back surface field(BSF) region in manufacturing high efficiency crystalline silicon solar cells. We investigated texturing difference between front and rear side of wafer by texturing of two adhered wafers. As a result, the flatter rear side was obtained by forming less pyramid size compared to the front side and improved reflectance of long wavelength and back surface field(BSF) region were also achieved. Therefore, the texturing of two adhered wafers can be expected to improve the efficiency of silicon solar cells due to increased short circuit current(Isc).

• Proceedings of the KIEE Conference
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• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
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• pp.259-262
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• 2009

Several universities in Korea are beginning studies related to soft stamping processes but since the studies are done with manual works thus systematic tests can't be performed due to difficulties in producing reproducible and repeatable fine patterns. Therefore, the phenomenon of destruction of the pattern forms of elastic polymers occurred during working because of inconsistent printing pressures and pinting time and there have been difficulties in maintaining flatness or producing uniform and fault-free fine structures in pinting large areas and also, there have been difficulties in multi-layered processes as patterns were changed by contacts in registering and errors in alignments. The purpose of development of this technology is to improve the process of soft lithography so that contacts between PDMS stamps and metal coated substrates in order to develop a stamp printing device that can not only shorten but also optimize processes, secure reproducibility and repeatability and is advantageous in printing large areas. Also, using this technology, this author is to develop equipment technologies and applied technologies for nano grade pattern printing processes with new concepts based on fine contact printing processes in order to apply them to diverse nano pattering processes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제22권12호
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• pp.1097-1106
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• 2011

In this paper, we present design method of wideband single-sideband mixer(SSM) with excellent sideband suppression and carrier suppression. We proposed SSM with 4-band split structure for uniform output flatness. From circuit simulation of this structure using Microwave OfficeTM, we got satisfactory results. We realized a SSM based on this results, then we experimented. The measured results show excellent agreements with the simulated results. We compared with two SSM's(target SSM(M Co. SM0218LC1CDC SSM) and our SSM) as well. The presented SSM is 3.35 times bigger, but sideband suppression is 3 dBc better and carrier suppression is 8 dBc better than those of comparative SSM, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.2-72.2
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• 2010

Nowadays, the crystalline Si Solar cell are expected for economical renewable energy source. The cost of the crystalline Si solar cell are decreasing by improvement of its efficiency and decrease of the cost of the raw Si wafers for Solar cells. This Si wafer based crystalline Si solar cell is the verified technology from several decade of its history. Now, I will introduce one method that can be upgrade the efficiency by using simple and economical method. The name of this method is Rear Side Etching(RSE). The purpose of rear side etching is the elimination of n+ layer of rear side and increase of the flatness. The effects of rear side etching are the improvement of Voc and increase of efficiency by reducement series resistance and forming of uniform BSF. The experimental procedure for rear side etching is very simple. After anti-reflection coating on solar cell wafer, Solar cell wafer is etched by the etching chemical that react with only rear side not front side. This special chemical is no harmful to anti-reflection coating layer. It can only etched rear side of solar cell wafer. We can use etching image by optical microscope, minority carrier life time by WCT 120, SiNx thickness and refractive index by ellipsometer, cell efficiency for the RSE effect measurement. The key point of rear side etching is development of etching process condition that react with only rear side. If we can control this factor, we can achieve increase of solar cell efficiency very economically without new device.

• The Journal of Korean Society for Radiation Therapy
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• 제18권2호
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• pp.81-87
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• 2006

Purpose: Few researches have been peformed on the dose distribution of the moving organ for radiotherapy so far. In order to simulate the organ motion caused by respiratory function, multipurpose phantom and moving device was used and dosimetric measurements for dose distribution of the moving organs were conducted in this study. The purpose of our study was to evaluate how dose distributions are changed due to respiratory motion. Materials and Methods: A multipurpose phantom and a moving device were developed for the measurement of the dose distribution of the moving organ due to respiratory function. Acryl chosen design of the phantom was considered the most obvious choice for phantom material. For construction of the phantom, we used acryl and cork with density of $1.14g/cm^3,\;0.32g/cm^3$ respectively. Acryl and cork slab in the phantom were used to simulate the normal organ and lung respectively. The moving phantom system was composed of moving device, moving control system, and acryl and cork phantom. Gafchromic film and EDR2 film were used to measure dose ditrbutions. The moving device system may be driven by two directional step motors and able to perform 2 dimensional movements (x, z axis), but only 1 dimensional movement(z axis) was used for this study. Results: Larger penumbra was shown in the cork phantom than in the acryl phantom. The dose profile and isodose curve of Gafchromic EBT film were not uniform since the film has small optical density responding to the dose. As the organ motion was increased, the blurrings in penumbra, flatness, and symmetry were increased. Most of measurements of dose distrbutions, Gafchromic EBT film has poor flatness and symmetry than EDR2 film, but both penumbra distributions were more or less comparable. Conclusion: The Gafchromic EBT film is more useful as it does not need development and more radiation dose could be exposed than EDR2 film without losing film characteristics. But as response of the optical density of Gafchromic EBT film to dose is low, beam profiles have more fluctuation at Gafchromic EBT. If the multipurpose phantom and moving device are used for treatment Q.A, and its corrections are made, treatment quality should be improved for the moving organs.

• Journal of radiological science and technology
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• 제39권1호
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• pp.99-105
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• 2016

The noise power spectrum (NPS) is one of the most general methods for measuring the noise amplitude and the quality of an image acquired from a uniform radiation field. The purpose of this study was to compare different NPS methodologies by using megavoltage X-ray energies. The NPS evaluation methods in diagnostic radiation were applied to therapy using the International Electro-technical Commission standard (IEC 62220-1). Various radiation therapy (RT) devices such as TrueBeam$^{TM}$(Varian), BEAMVIEW$^{PLUS}$(Siemens), iViewGT(Elekta) and Clinac$^R$ iX (Varian) were used. In order to measure the region of interest (ROI) of the NPS, we used the following four factors: the overlapping impact, the non-overlapping impact, the flatness and penumbra. As for NPS results, iViewGT(Elekta) had the higher amplitude of noise, compared to BEAMVIEW$^{PLUS}$ (Siemens), TrueBeam$^{TM}$(Varian) flattening filter, Clinac$^{R}$iXaS1000(Varian) and TrueBeam$^{TM}$(Varian) flattening filter free. The present study revealed that various factors could be employed to produce megavoltage imaging (MVI) of the NPS and as a baseline standard for NPS methodologies control in MVI.