• 대한조선학회논문집
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• 제50권1호
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• pp.1-7
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• 2013

The high-skewed and/or composite propellers of current interests to reduce the ship vibration and to increase the acoustic performance are likely to be exposed to the unexpected structural problems. One typical example is that the added mass effect on the propellers working in the non-uniform wake field reduces the natural frequency of the propeller leading to the resonance with the low-frequency excitation of the external forces. To avoid this resonance problem during the design stage, the technique of fluid-structure interaction has been developed, but the higher-order effect of the blade geometry deformation is not yet considered in evaluating the added mass effects. In this paper the fluid boundary-value problem is formulated by the potential-based panel method in the inviscid fluid region with the velocity inflow due to the body deformation, and the structural response of the solid body under the hydrodynamic loading is solved by applying the finite element method which implements the 20-node iso-parametric element model. The fluid-structure problem is solved iteratively. A basic fluid-sturcture interaction study is performed with the simple rectangular plates of thin thickness with various planform submerged in the water of infinite extent. The computations show good correlation with the experimental results of Linholm, et al. (1965).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 한국재료학회지
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• 제10권3호
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• pp.204-211
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• 2000

초음파 분무법으로 $(Y,Gd)BO_3:Eu$의 PDP 적색 형광체를 제조하여 147nm VUV 여기에 따른 발광 특성을 분석하였다. 초음파 분무에 사용된 전구체 용액은 Y, Gd, Eu의 아세트산염과 $H_3BO_3$를 증류수에 용해하여 1.7MHz의 초음파 분무기로 고온의 반응관내로 분무하였다. 분무된 액적은 반응관내에서 통과시 불충분한 반응으로 C-C와 C-H를 함유한 비정질 상이었으나, $1100^{\circ}C$에서 추가 열처리 한 시편은 고상반응법으로 제조한 형광체와 동일한 결정구조와 성분을 보였다. 고상반응법으로 제조한 형광체의 분말 크기는 $3{\mu\textrm{m}}$으로 조대하고 불균일한 분포를 보인 반면, $500^{\circ}C$에서 분무한 후 $900^{\circ}C$에서 열처리하여 제조한 $(Y_{0.7}Gd_{0.3})_{0.95}BO_3:Eu_{0.05}\;^{3+}$ 형광체의 모양은 비교적 구형이었으며 평균 입자크기는 $0.7{\mu\textrm{m}}$로 미세하고 균일한 분포를 하고 있었다. 147nm VUV 여기시 초음파 분무로 제조한 $(Y_{0.7}Gd_{0.3})_{0.95}BO_3:Eu_{0.05}\;^{3+}$ 형광체의 적색 발광강도는 고상반응법으로 제조한 시편이나 상용품인 $(Y,Gd)BO_3:Eu$ 형광체에 비해 그 휘도가 증가되었다.