• Title/Summary/Keyword: Undercutting

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A Study on the Minimum Tooth Number of Profile Shifted Elliptical Gears to Avoid Undercutting (언더컷을 고려한 전위 타원계엽형기어의 최소잇수에 관한 연구)

  • 최상훈;이두영
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.04a
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    • pp.572-577
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    • 1997
  • This present paper describes a mathematical model of profile elliptical gears, and this model is based on the concepts of envelop theory and conjugate geometry between the blank and the straight-sided rack cutter. The geometric model of the rack cutter includes working regions generating involute curves andd fillets for trocoidal curves, and furthermore the addendum modified coeff,is considered for avoiding undercutting. The addendum modified coeff, is changed linearly along with pitch curves and must be the must be the same absolute value at both major semi-axis and minor semi-axis. If undercutting is at all pronounced, the undercut tooth not only are weakened in strength, but lose a small portion of the involute adjacent to the base circle, then this loss of involute may ncause a serios reduction in the length of contact. A very effective method of avoiding undercutting is to use the so-called profile shifted gearing. Non-undercutting conditon is examined with the change of eccentricity and addendum modefied coeff. in elliptical gears and then the minimum number of tooth is proposed not to gernerate undercutting phenomenon.

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Minimum Tooth Number of Elliptical Gears with Involute-Trocoidal Profile (인벌류우트-트로코이드 치형을 갖는 타원계 엽형기어의 최소잇수에 관한 연구)

  • 최상훈
    • Journal of the Korean Society for Precision Engineering
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    • v.15 no.5
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    • pp.85-92
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    • 1998
  • This present paper describes a mathematical model of profile shifted elliptical gears, and this model is based on the concepts of envelope theory and conjugate geometry between the blank and the straight-sided rack cutter. The geometric model of the rack cutter includes working regions generating involute curves and fillets for trocoidal curves, and furthermore the addendum modified coeff. is considered for avoiding undercutting. The addendum modified coeff. is changed linearly along with pitch curves and must be the same absolute value at both major semi-axis and minor semi-axis. If undercutting is at all pronounced, the undercut tooth not only are weakened in strength, but lose a small portion of the involute adjacent to the base circle, then this loss of involute may cause a serious reduction in the length of contact. A very effective method of avoiding undercutting is to use the so-called profile shifted gearing. Non-undercutting condition is examined with the change of eccentricity and addendum modified coeff. in elliptical gears and then the minimum number of tooth is proposed not to gernerate undercutting phenomenon.

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Fundamental Study on Rock Cutting by an Actuated Undercutting Disc (구동형 언더커팅 디스크에 의한 암석절삭에 관한 기초연구)

  • Jeong, Hoyoung;Wicaksana, Yudhidya;Kim, Sehun;Jeon, Seokwon
    • Tunnel and Underground Space
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    • v.30 no.6
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    • pp.591-602
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    • 2020
  • Several alternative rock-cutting concepts, which are modified from the conventional ones, have been developed lately. Of the concepts, undercutting is one of the latest technologies. In this study, as a fundamental study on the undercutting technique, the rock-cutting mechanism and important parameters of the undercutting were introduced. This study built up cutting test system for evaluating the cutting performance of an actuated undercutting disc cutter (ADC), and carried out a series of cutting tests under different cutting parameters of ADC. The characteristics of cutter forces obtained from ADC rock-cutting tests were analyzed. The both average and peak values of the three directional cutter forces were linearly increased with the increases of linear velocity, penetration depth in vertical direction and eccentricity of ADC.

Assessment of rock cutting efficiency of an actuated undercutting disc (구동형 언더커팅 디스크의 절삭효율 평가)

  • Jeong, Hoyoung;Wicaksana, Yudhidya;Kim, Sehun;Jeon, Seokwon
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.23 no.3
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    • pp.199-209
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    • 2021
  • Alternative methods of rock cutting have been introduced to substitute and to improve the traditional mechanical rock excavation methods (e.g., TBM and roadheader). Undercutting methods have been recently studied in some countries. In undercutting, several additional cutting parameters are involved in its cutting process compared to the traditional rock-cutting. As a fundamental study, this paper introduces the concept of undercutting method with actuated disc, lab-scaled testing system, and testing procedures of undercutting by the system. Also, we present the calculation methods of cutter forces and specific energy, and discuss the results of undercutting tests compared to those of traditional rock-cutting methods.

Current Status of Rock Cutting Technique Using Undercutting Concept (언더커팅 개념을 적용한 암반절삭기술의 현황 분석)

  • Jeong, Hoyoung;Choi, Seungbeom;Jeon, Seokwon
    • Tunnel and Underground Space
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    • v.29 no.3
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    • pp.148-156
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    • 2019
  • In urban area, the use of mechanical excavators (e.g., TBM and roadheader) has been increasing in construction of tunnelling and underground space. The undercutting technology, which is modified from the conventional rock-cutting concept, has been developed by advanced countries. Therefore, research on the latest technology of mechanical excavation is required, and keeping carrying out research on conventional mechanical tunneling methods at the same time. In this study, as a fundamental study of the undercutting technique, the principle and concept of the undercutting were introduced, as well as the current status of the research of advanced countries. The undercutting is applicable as a full-face excavation method for the tunnels and underground spaces, as well as an auxiliary(partial-face excavation) method for extension of the existing tunnels.

Evaluation of rock cutting efficiency of the actuated undercutting mechanism

  • Jeong, Hoyoung;Wicaksana, Yudhidya;Kim, Sehun;Jeon, Seokwon
    • Geomechanics and Engineering
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    • v.29 no.3
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    • pp.359-368
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    • 2022
  • Undercutting using an actuated disc cutter (ADC) involves more complex cutting mechanism than traditional rock cutting does, requiring the application of various new cutting parameters, such as eccentricity, cutter inclination angle, and axis rotational speed. This study presents cutting-edge laboratory-scale testing equipment that allows performing ADC tests. ADC tests were carried out on a concrete block with a specified strength of 20 MPa, using a variety of cutting settings that included penetration depth (p), eccentricity (e), and linear velocity (v). ADC, unlike pick and disc cutting, has a non-linear cutting path with a dynamic cutting direction, requiring the development of a new method for predicting cutting force and specific energy. The influence of cutting parameters to the cutter forces were discussed. The ratio of eccentricity to the penetration depth (e/p) was proposed to evaluate the optimal cutting condition. Specific energy varies with e/p ratio, and exhibits optimum values in particular cases. In general, actuated undercutting may potentially give a more efficient cutting than conventional pick and disc cutting by demonstrating reasonably lower specific energy in a comparable cutting environment.

Selective Etching of Silicon in TMAH:IPA:Pyrazine Solutions (TMAH:IPA:Pyrazine 용액에서 실리콘의 선택식각)

  • Chung, Gwiy-Sang;Lee, Chae-Bong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.112-116
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    • 2000
  • This paper presents anisotropic ethcing characteristics of single-crystal silicon in tetramethylammonium hydroxide(TMAH):isopropyl alcohol(IPA) solutions containing pyrazine. With the addition of IPA to TMAH solutions, etching characteristics are exhibited that indicate an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of $0.8\;{\mu}m/min$, which is faster by 13 % than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH:0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased if more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front were not observed and the undercutting ratio was reduced by 30 ~ 50 %.

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The formation of Si V-groove for optical fiber alignment in optoelectronic devices (광전소자 패키징에서 광섬유 정렬을 위한 Si V-groove 형성)

  • 유영석;김영호
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.3
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    • pp.65-71
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    • 1999
  • The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

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The Effect of Pyrazine on TMAH:IPA Single-crystal Silicon Anisotropic Etching Properties

  • Gwiy-Sang Chung;Tae-Song Kim
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.2
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    • pp.21-25
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    • 2001
  • This paper presents the effect of pyrazine on tetramethylammonium hydroxide (TMAH):isopropyl alcohol (IPA) single-crystal silicon anisotropic etching properties. With the addition of IPA to TMAH solutions, etching characteristics are exhibited an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of 0.8 ${\mu}{\textrm}{m}$/min, which is faster by 13% than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH: 0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased when more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front are not observed and the undercutting ratio is reduced by 30~50%. These results indicate that anisotropic etching technology using TMAH:IPA:pyrazine solutions provides a powerful and versatile method for realizing of microelectromechanical systems.

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Si Anisotropic Etching Characteristics of TMAH/IPA (TMAH/IPA의 실리콘 이방성 식각특성)

  • 정귀상;박진성;최영규
    • Electrical & Electronic Materials
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    • v.10 no.5
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    • pp.481-486
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    • 1997
  • This paper describes the anisotropic etching characteristics of Si in acqueous TMAH/IPA solutions. The etch rates of (100) oriented Si crystal planes decrease with increasing TMAH concentration and IPA concentration. Etchant concentration and etch temperature have a large effect on hillock density. Hillock density strongly increase with lower TMAH concentration and higher etch temperature. The etched (100) planes are covered by pyramidal-shaped hillocks below TMAH 15 wt.%, but very smooth surface is obtained TMAH 25 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes. Undercutting ratio of pure TMAH solution is much higher than KOH. But, addition of IPA to TMAh the underrcutting ratio reduces by a factor of 3∼4. Therefore, acqueous TMAH/IPA solution is able to use as anisotropic etchant of Si because of full compability with IC fabrication process.

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