• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.314-322
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• 1997

The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.