• Title/Summary/Keyword: Ultra-thin Pd layer

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The effect of initial Pd catalyst oxidation stale on CH$_4$sensitivity of SnO$_2$thin film sensor (Pd 촉매의 부분 산화 조절을 이용한 SnO$_2$박막 센서의 CH$_4$감도 변화 연구)

  • Choi, W. K.;Cho, J.;Cho, J. S.;Song, J. H.;Jung, H. J.;Koh, S. K.
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.45-49
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    • 1999

  • A flammable gas sensor based on the $SnO_2$thin film deposited by the reactive ion assisted deposition was fabricated and ultra-thin Pd layer as catalyst was adsorbed at surface by ion beam sputtering. The initial oxidation states of Pd catalyst were controlled to investigate the role of Pd in the sensing process of inflammale gas sensor through annealing in air and vacuum respectively. The Pd catalyst existing in pure metallic state showed the sensitivity higher than that of PdO. The result might be closely related to the fact that PdO as a surface acceptor would receive electrons via Pd sub-channel from $SnO_2$, and thus which reduces the sensitivity and delay the response time.

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High Performance InAIAs/InGaAs Metal-Semiconductor-Metal Photodetectors Grown by Gas Source Molecular Beam Epitaxy

  • Zhang, Y.G.;Chen, J.X.;Li, A.Z.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.75-78
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    • 1995

  • Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

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