• Title/Summary/Keyword: Ultra-high-rise

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Electrolyzed water as an alternative for environmentally-benign semiconductor cleaning chemicals

  • Ryoo, Kunkul;Kang, Byeongdoo
    • Clean Technology
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    • v.7 no.3
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    • pp.215-223
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    • 2001
  • A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as electrolyzed water(EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed water was generated by an electrolysis system which consists of three anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH4Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF treated Si wafer surfaces were measured to be $65.9^{\circ}$, $66.5^{\circ}$ and $56.8^{\circ}$, respectively, which characterizes clearly the eletrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, ICP-MS was introduced. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, Tencor 6220 were introduced. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about $9{\ell}$ chemicals, while EW did only $400m{\ell}$ HCl electrolyte or $600m{\ell}$ NH4Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for promoting environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

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A Study on Si-wafer Cleaning by Electrolyzed Water (전리수를 이용한 실리콘 웨이퍼 세정)

  • Yun, Hyo-Seop;Ryu, Geun-Geol
    • Korean Journal of Materials Research
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    • v.11 no.4
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    • pp.251-257
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    • 2001
  • A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case $NH_4$Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

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A Study on Silicon Wafer Surfaces Treated with Electrolyzed Water (전리수를 이용한 Si 웨이퍼 표면 변화 연구)

  • 김우혁;류근걸
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.3 no.2
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    • pp.74-79
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    • 2002
  • In the a rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increases. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to the environmental issue. To resolve this matter, candidates of advanced cleaning processes has been studied. One of them is to apply the electrolyzed water. In this work, Compared with surface on Si wafer with electrolyzed water cleaning and various chemicals cleaning, and analyzed Si wafer surface condition treated with elecoolyzed water by cleaning temperature and cleaning time. Especially. concentrate upon the contact angle. finally, contact angle on surface treated with cathode water cleaning is 17.28, and anode water cleaning is 34.1.

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Modeling of a rockburst related to anomalously low friction effects in great depth

  • Zhan, J.W.;Jin, G.X.;Xu, C.S.;Yang, H.Q.;Liu, J.F.;Zhang, X.D.
    • Geomechanics and Engineering
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    • v.29 no.2
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    • pp.113-131
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    • 2022
  • A rockburst is a common disaster in deep-tunnel excavation engineering, especially for high-geostress areas. An anomalously low friction effect is one of the most important inducements of rockbursts. To elucidate the correlation between an anomalously low friction effect and a rockburst, we establish a two-dimensional prediction model that considers the discontinuous structure of a rock mass. The degree of freedom of the rotation angle is introduced, thus the motion equations of the blocks under the influence of a transient disturbing force are acquired according to the interactions of the blocks. Based on the two-dimensional discontinuous block model of deep rock mass, a rockburst prediction model is established, and the initiation process of ultra-low friction rockburst is analyzed. In addition, the intensity of a rockburst, including the location, depth, area, and velocity of ejection fragments, can be determined quantitatively using the proposed prediction model. Then, through a specific example, the effects of geomechanical parameters such as the different principal stress ratios, the material properties, a dip of principal stress on the occurrence form and range of rockburst are analyzed. The results indicate that under dynamic disturbance, stress variation on the structural surface in a deep rock mass may directly give rise to a rockburst. The formation of rockburst is characterized by three stages: the appearance of cracks that result from the tension or compression failure of the deformation block, the transformation of strain energy of rock blocks to kinetic energy, and the ejection of some of the free blocks from the surrounding rock mass. Finally, the two-dimensional rockburst prediction model is applied to the construction drainage tunnel project of Jinping II hydropower station. Through the comparison with the field measured rockburst data and UDEC simulation results, it shows that the model in this paper is in good agreement with the actual working conditions, which verifies the accuracy of the model in this paper.

Quality Changes during Storage of Low Salt Fermented Anchovy treated with High Hydrostatic Pressure (초고압 처리한 멸치젓의 저장 중 품질 변화)

  • Lim, Sang-Bin;Jwa, Mi-Kyung;Mok, Chul-Kyoon;Woo, Gun-Jo
    • Korean Journal of Food Science and Technology
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    • v.32 no.2
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    • pp.373-379
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    • 2000
  • Low salt fermented anchovy was stored at $25^{\circ}C$ for a period of 20 days from the time of ultra-high pressure treatment under different operating conditions, such as magnitude of pressure($(200{\sim}500\;MPa)$, temperature$(20{\sim}50^{\circ}C)$ and treatment time$(5{\sim}20\;min)$ with viable cell count(VCC) and quality assessments conducted at regular intervals. VCC decreased logarithmically during storage. Lower values of VCC in the treated samples were observed compared to the untreated. A gradual increase in peroxide value was noticed during storage, compared to those of the untreated which showed a sudden rise. Thiobarbituric acid value decreased initially and remained at that level before rising almost exponentially between 12 and 20 days. Volatile basic nitrogen increased gradually during storage. Amino nitrogen remained almost constant up to 20 days, regardless of any conditions investigated. High pressure treatment maintained better quality during storage at $25^{\circ}C$ by reducing the viable cell count in low salt fermented anchovy.

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The study on the effect of fracture zone and its orientation on the behavior of shield TBM cable tunnel (단층파쇄대 규모 및 조우 조건에 따른 전력구 쉴드 TBM 터널의 거동 특성 분석)

  • Cho, Won-Sub;Song, Ki-Il;Kim, Kyoung-Yul
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.16 no.4
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    • pp.403-415
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    • 2014
  • Recently, the temperature rise in the summer due to climate change, power usage is increasing rapidly. As a result, power generation facilities have been newly completed and the need for ultra-high-voltage transmission line for power transmission of electricity to the urban area has increased. The mechanized tunnelling method using a shield TBM have an advantage that it can minimize vibrations transmitted to the ground and ground subsidence as compared with the conventional tunnelling method. Despite the popularity of shield TBM for cable tunnel construction, study on the mechanical behavior of cable tunnel driven by shield TBM is insufficient. Thus, in this study, the effect of fractured zone ahead of tunnel face on the mechanical behavior of the shield TBM cable tunnel is investigated. In addition, it is intended to compare the behavior characteristics of the fractured zone with continuous model and applying the interface elements. Tunnelling with shield TBM is simulated using 3D FEM. According to the change of the direction and magnitude of the fractured zone, Sectional forces such as axial force, shear force and bending moment are monitored and vertical displacement at the ground surface is measured. Based on the stability analysis with the results obtained from the numerical analysis, it is possible to predict fractured zone ahead of the shield TBM and ensure the stability of the tunnel structure.

Analysis of production performance and sensory evaluation for shucking oyster using pressure (압력으로 박신한 굴 생산성능과 관능평가 분석)

  • Ok-sam KIM;Eun-Bi MIN;Doo-jin HWANG;Geum-Bum YOO
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.59 no.1
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    • pp.35-43
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    • 2023
  • Sensory evaluation of shucking pressure, pressure holding time, seeding method, difference in full shucking rate in the aquaculture area and shucking oyster was performed using an ultra-high pressure oyster shucking machine. The reaching time for each target pressure is 2.2-2.4 MPa/sec in the range of 180 MPa to 240 MPa. had a rate of pressure rise. There was a difference of 0.5-1.7℃ in the range of 24-27℃ in the seawater temperature before and after the pressure treatment inside the pressure vessel, but there was no specific increase or decrease in seawater temperature. When only the shucking pressure is increased without the pressure holding time, the critical shucking pressure at which the oyster shell is opened and the flesh is peeled in the range of 200 to 220 MPa. When the critical shucking pressure is reached, the oyster sample in the closed vessel is expected to be shucked by about 40%. If there is no pressure holding time when judged only by full shucking, an increase in pressure of about 1.5 MPa is required to further shuck 3% of the oyster population. The oyster samples cultivated in the south coast of Korea were subject to full shucking under the conditions of 220 MPa shucking pressure and two minutes (120 seconds) of pressure holding time, and the difference in the pressure of the oysters according to the oyster seeding method and the farming area was minute. Finally, the condition of 220 MPa of shucking pressure and three minutes of pressure holding time was the best at 1.52 when the result of the sensory evaluation performed manually was set to 1.0. Next was 1.4 under the conditions of 220 MPa of shucking pressure and one minute of pressure holding time (60 seconds), and 1.3 under the condition of 220 MPa and two minutes of pressure holding time (120 seconds). Therefore, it is considered that the most desirable shucking conditions, considering the efficiency and sensory evaluation results, are the conditions of 220 MPa shucking pressure and two to three minutes of pressure holding time.