• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.636-639
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• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Journal of Information Display
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• v.7 no.4
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• pp.13-16
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• 2006

II-$III_{2}-(S,Se)_{4}$ structured of phosphor have been used at various fields because they have high luminescent efficiency and broad emission band. Among these phosphors, europium doped $BaGa_{2}S_{4}$ was prepared by solid-state method. We investigated the possibility of applying [ ] due to emissive property of UV region. Also, general sulfide phosphors were synthesized by using injurious $H_{2}S$ $CS_{2}$ gas. However, this study prepared $BaGa_{2}S_{4}:Eu^{2+}$ phosphor is addition to excess sulfur under 5% $H_{2}$/95% $N_{2}$ reduction atmosphere. So, this process could involved large scale synthesis because of non-harmfulness and simple process. The photo-luminescence efficiency of the prepared $BaGa_{2}S_{4}:Eu^{2+}$ phosphor increased by 20% compared with commercial $BaGa_{2}S_{4}:Eu^{2+}$ phosphor. From this, we could conclude that the prepared $BaGa_{2}S_{4}:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.168.2-168.2
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• 2014

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 반응성 high power impulse magnetron sputtering (HIPIMS) 장비를 활용하여, 높은 공정 압력(High-pressure)에서 펄스폭(Pulse width)을 조절하여 $SiO_2$ 반사방지막 코팅층을 형성하였다. 또한, 기공이 더 많은 박막을 제작하기 위해 빗각증착(Oblique-angle deposition)을 적용하여 더 좋은 광학 특성을 갖는 반사방지막 코팅층을 형성하였다. UV-Vis spectrometer를 이용하여, 380~800 nm 파장에서 투과율(Transmittance)을 측정하여 비교, 분석하였다. Ellipsometer를 이용하여 $SiO_2$ 박막층의 굴절률(Refractive index)을 측정한 결과, 반사방지막 코팅층 내부 기공에 따라 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, 코팅층 내부 기공의 형상을 확인하기 위해 SEM(Secondary electron microscopy)을 활용하여 코팅층 단면(Cross section)을 측정하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 $SiO_2$ 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.231-231
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• 2013

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 Reactive magnetron sputtering 장비를 활용하여, 50~100 mTorr의 높은 공정 압력(High pressure)에서 Ar：O2 유량비를 변화시키며 증착하여 SiO2 반사방지막 코팅층을 형성하였다. Ellipsometer를 이용하여 SiO2 박막층의 굴절률(Refractive index)을 측정한 결과, 공정 압력과 Ar：O2 유량비에 따라 SiO2 박막이 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, UV-Vis spectrometer를 이용하여, 190~1,100 nm 파장에서의 반사율(Reflectance)과 투과율(Transmittance)을 측정하여 비교, 분석하였다. 나아가 증착된 SiO2 반사방지막을 비정질 실리콘 박막 태양전지에 적용하여 효율 향상 효과를 실험하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 SiO2 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.301-306
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• 2017

The discovery of new luminescent materials for use in light-emitting diodes(LEDs) has been of great interest, since LED-based solid state lighting applications are attracting a lot of attention in the energy saving and environmental fields. Recent research trends have centered on the discovery of new luminescent materials rather than on fine changes in well-known luminescent materials. In a sense, the novelty of our study beyond simple modification or improvement of existing phosphors. A good strategy for the discovery of new fluorescent materials is to introduce activators that are appropriate for conventional inorganic compounds, that have well-defined structures in the crystal structure database, but have not been considered as phosphor hosts. Another strategy is to discover new host compounds with structures that cannot be found in any existing databases. We have pursued these two strategies at the same time using composite search technology with particle swarm optimization(PSO). In this study, using PSO, we have tracked down a search space composed of Sr-Al-Si-O-N and have discovered a new phosphor structure with yellow luminescence; this material is a potential candidate for UV-LED applications.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.623-627
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• 2008

For possible applications as luminescent materials for white-light emission using UV-LEDs, $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphors were prepared by a solid state reaction. The photoluminescence properties of the phosphor were investigated under ultraviolet ray (UV) excitation. The prepared phosphor powders were characterized to from a single phase of a monoclinic crystalline structure by a powder X-ray diffraction analysis. In the photoluminescence spectra, the $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphor showed an intense emission band centered at the 584 nm wavelength due to the f-d transition of the $Eu^{2+}$ activator. The optimum concentration of $Eu^{2+}$ activator in the $Ba_2Mg(PO_4)_2$ host, indicating the maximum emission intensity under the excitation of a 395 nm wavelength, was 5 at%. In addition, it was confirmed that the $Eu^{2+}$ ions are substituted at both $Ba^{2+}$ sites in the $Ba_2Mg(PO_4)_2$ crystal. On the other hand, the critical distance of energy transfer between $Eu^{2+}$ ions in the $Ba_2Mg(PO_4)_2$ host was evaluated to be approximately 19.3 A. With increasing temperature, the emission intensity of the $Ba_2Mg(PO_4)_2$:Eu phosphor was considerably decreased and the central wavelength of the emission peak was shifted toward a short wavelength.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.350-350
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• 2011

ZnO는 II-VI족 화합물 반도체로서 3.37 ev의 band gap energy와 60 mv의 exciton binding energy를 가지며 차세대 소자로 다양한 분야에서 연구되어지고 있다. ZnO 박막과는 다르게 ZnO nano structure는 효율성과 특성 향상의 이점으로 태양전지와 투명전극 소자에 많은 연구가 되고 있으며 UV 레이저, 가스센서, LED, 압전소자, Field Emitting Transistor (FET) 등 다양한 응용분야에서 연구되고 있다. 본 연구에서는 유리 기판 위에 RF Magnetron sputtering법을 이용해 ZnO buffer layer를 다양한 두께(~1,000${\AA}$)로 증착한 뒤, Zn powder (99.99%)를 지름 2inch 석영관 안에 넣어 Thermal furnace장비를 이용하여 Thermal Evaporation법으로 약 500$^{\circ}C$에서 30분 동안 촉매 없이 성장 하였다. 수직성장된 ZnO 나노 구조체의 특성을 전계방출주사전자현미경(SEM), X-선 회절패턴(XRD), UV-spectra를 이용하여 분석하였다. SEM 분석을 통하여 ZnO buffer layer위에 성장된 ZnO 나노 구조체는 직경이 약 ~50 nm, 길이가 ~2 um까지 성장을 보였으며, XRD 측정결과, ZnO 우선 성장 방향(002)을 확인하였다. 두 가지 측정을 통하여 ZnO buffer layer의 유무에 따라 성장 특성이 향상되었음을 확인하였으며, 이는 buffer layer가 seed 역할을 한 것으로 사료된다. UV-spectra 측정을 통하여 가시광 영역(400~780 nm)에서 60%대의 투과도를 보여 가시광 영역에서 투명성을 요구하는 전자 소자 및 광소자 등에 적용 가능성을 확인하였다. 이 연구를 통하여 우수한 투과도를 가지며 유리 기판위에 수직성장된 ZnO 나노구조체는 태양전지와 플렉서블 디스플레이 등 다양한 활용 분야를 제시할 수 있다.