• Journal of Powder Materials
• /
• v.13 no.3 s.56
• /
• pp.211-216
• /
• 2006

In an attempt to reduce processing cost and to improve resolution of PDPs, micro mold transfer processing route for barrier ribs of plasma display panel was attempted. In this study, the parameters that may cause defects during the process were identified, which include the shrinkage during UV curing process, stress due to evaporation of organic components, and sintering shrinkage. Considering such parameters, UV curable paste was developed and barrier ribs of PDPs were successfully processed via the process. This work demonstrated the possibility of build-up route in manufacturing barrier ribs of PDP.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.571-574
• /
• 2004

Symmetric closed-cell type barrier ribs of PDP were formed by capillary molding process using molds prepared by inclined UV lithography process. The effects of inclining angle of barrier ribs on the sintering shrinkage and luminance of panel were examined. The results indicate that the barrier ribs of inclined morphology affect the sintering shrinkage and luminance efficiency significantly.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.917-920
• /
• 2006

In an attempt to reduce processing cost and to improve resolution of PDPs, micro mold transfer processing route for barrier ribs of plasma display panel was developed. In this study, the parameters that may cause defects during the process were identified, which include the shrinkage during UV curing process, stress due to evaporation of organic components, and sintering shrinkage. Considering such parameters, UV curable paste was developed and barrier ribs of PDPs were successfully processed via the process. In addition, the process was successfully applied for the processing of barrier ribs with embedded counter electrodes.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.20-23
• /
• 2001

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper, Stripes of grooves of which width 48${\mu}{\textrm}{m}$, depth 124$\mu\textrm{m}$ , pitch 274$\mu\textrm{m}$ was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6nm Ra in grooving Si. Barrier ribs were formed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waveness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

• Journal of Sensor Science and Technology
• /
• v.17 no.5
• /
• pp.346-349
• /
• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.394-394
• /
• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.214.2-214.2
• /
• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.21 no.2
• /
• pp.67-74
• /
• 2003

Barrier ribs for PDP(plasma display panel) are commonly utilized to have uniform height and width and to prevent opical crosstalk between adjacent cells. The requirements for such barrier ribs are uniform height and shape, low outgassing rate and low porosity, high aspect ratio, and fine resolution. In this study, we are studied about that to make efficiency of material and high quality barrier ribs for PDP. As a result, could got high barrier ribs of $140{\mu}m$ evenly in 1th phenomenon using watersoluble UV curing resin and know that flatness of upper part is also very good.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.910-912
• /
• 2006

Barrier ribs in plasma display panels (PDPs) function to maintain the discharge space between the glass plates as well as to prevent optical cross-talking. The barrier ribs currently employed are typically $300{\mu}m$ pitch, $110{\sim}120{\mu}m$ in height, with upper and lower widths of $50{\mu}m$ and $80{\mu}m$, respectively. It has been reported that barrier ribs can be fabricated by screen-printing, sand blasting, etching and photolithographic processes. In this study, photosensitive barrier rib pastes were formulated and systematically evaluated in terms of photolithographic process variables such as printing, drying, UV exposure, development and sintering. It was found that the use of UV absorbent, polymerization inhibitor and surfactant were very effective in controlling the width uniformity of barrier ribs in the photolithographic method of barrier rib patterning.

• Applied Science and Convergence Technology
• /
• v.25 no.6
• /
• pp.138-144
• /
• 2016

The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.