• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.6
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• pp.219-224
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• 2022

CaF₂ single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF₂ belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF₂ single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF₂ single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF₂ crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.277-284
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• 2015

The humans are under attack involving the hazardous environment and pathogen/biotoxin aerosol that is realistic concerned. A portable, fast, reliable, and cheap Pathogen and Biotoxin Aerosol threat Detection(PBAD) trigger is an important technology for detect-to-protect and detect-to-treat system because the man-made biological terror is a fast and lethal infection. The ultraviolet C(UVC) wavelengths light source is key issue for PBAD that is sensitive because of strong fluorescence cross section from fluorescent amino acids in proteins such as tryptophan and tyrosine. The UVC-light emitting diode(LED) is emerging light source technology as alternative to laser or lamps as they offer several advantages. This paper discussed about the design consideration of UVC-LED for the PBAD system. The UVC-LED and PBAD technology, currently available or in development, are also discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2737-2740
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• 2013

The layered $KTiNbO_5$ was successfully synthesized with titanium(IV) isopropoxide and niobium oxalate by a novel polymerized complex (PC) method. The morphology and structure of the as-prepared sample was characterized by means of High-Resolution Transmission Electron Microscope, powder X-ray diffraction, and Laser Raman Spectroscopy. The spectral response characteristic was recorded by using UV-vis Diffuse Reflectance Spectroscopy. Results show that $KTiNbO_5$ as-prepared by PC method presents an uniform morphology of nano-particles, the mean particle sizes is ca. 28 nm corresponding to the (002), and the crystal structure can be well indexed to the orthorhombic phase. The sample as-prepared by PC method has higher band gap energy than that of the sample prepared by a solid-state reaction method due to the quantum size effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.95-97
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• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• Food Science and Biotechnology
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• v.18 no.4
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• pp.823-832
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• 2009

In recent years, special concerns have been raised about the safety assessment of foods and food ingredients derived from genetically modified organisms (GMOs). A growing number of countries establish regulations and laws for GMOs in order to allow consumers an informed choice. In this case, a lot of methods have been developed for the detection of GMOs. However, the reproducibility among methods and laboratories is still a problem. Consequently, it is still in great demand for more effective methods. In comparison with the gel electrophoresis, the capillary electrophoresis (CE) technology has some unique advantages, such as high resolution efficiency and less time consumption. Therefore, some CE-based methods have been developed for the detection of GMOs in recent years. All kinds of CE detection methods, such as ultraviolet (UV), laser induced fluorescence (LIF), and chemiluminescence (CL) detection, have been used for GMOs detection. Microchip capillary electrophoresis (MCE) methods have also been used for GMOs detection and they have shown some unique advantages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.140-142
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• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.273-277
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• 2015

We investigated secondary electron emission characteristics of ZnO thin films prepared by pulsed laser deposition method with respect to the ambient oxygen pressure and the substrate temperature during the deposition. X-ray diffraction, UV-Vis spectrometry, atomic force microscopy, and ${\gamma}$-FIB were used to examine the structural, optical transmission, surface morphology, and secondary electron emission properties of the films, respectively. The secondary electron emission coefficient of the ZnO films increases as the O/Zn ratio of the films increases which was thought to result from either the ambient oxygen pressure increase or the substrate temperature decrease and as the grain size of the films decreases. It was confirmed that ZnO has better secondary electron emission characteristics than those of MgO, which is currently widely used as a material for PDP protecting layers.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.154-159
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• 2005

The next generation of optical storage systems requires higher numerical aperture (NA) objective lenses and shorter wavelength laser in order to improve the unit areal density. A blu-ray technology satisfies a miniaturization and a high capacity which are the requirements of the portable device. In this paper, we analyze the optical performance of hybrid micro lens and do active alignment. The hybrid micro lens is manufactured by using a wafer based fabrication technology. Optical components of hybrid micro lens are evaluated. The measurement of the optical power, the spot size and the wavefront error awe performed to evaluate the hybrid micro lens with NA 0.85. Using the measured data, we estimate if the performance of hybrid micro lens corresponds to the designed performance. After the performance of hybrid micro lens is evaluated, the integrated optical pickup and the hybrid micro lens are assembled by active alignment using UV curing and the optical performance of SFFOP is satisfied with BD specifications.