• Title/Summary/Keyword: UV/Vis spectrophotometer

Search Result 314, Processing Time 0.031 seconds

A Study on the Kinetics of Copper Ions Reduction and Deposition Morphology with the Rotating Disk Electrode (RDE를 이용한 구리이온의 환원속도 및 전착형태에 관한 고찰)

  • Nam, Sang Cheol;Um, Sung Hyun;Lee, Choong Young;Tak, Yongsug;Nam, Chong Woo
    • Applied Chemistry for Engineering
    • /
    • v.8 no.4
    • /
    • pp.645-652
    • /
    • 1997
  • Electrochemical characteristics and kinetic parameters of copper ion reduction were investigated with a platinum rotating disk electrode (RDE) in a diffusion controlled region. Reduction of Cu(II) in sulfate had one-step two-xelectron process, while the reduction of Cu(II) in chloride solution was involved two one-electron processes. The transfer coefficient of Cu(II) in sulfate solution was lowest, and the transfer coefficient of Cu(I) in halide solutions had the value of nearly one. In chloride solutions, electrodeposition rate of Cu(II) was about one hundred times faster than Cu(I). Diffusion coefficient increased in the order of Cu(II) in chloride solution, Cu(I) in the iodide, bromide, chloride solution, Cu(II) in sulfate solution. The calculated ionic radii and activation energy for diffusion decreased in the same order as above. Morphological study on the copper electrodeposition indicated that the electrode surface became rougher as both concentration and reduction potential increases, and the roughness of the surface was analyzed with UV/VIS spectrophotometer.

  • PDF

Hexagonal Boron Nitride Monolayer Growth without Aminoborane Nanoparticles by Chemical Vapor Deposition

  • Han, Jaehyu;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.409-409
    • /
    • 2014
  • Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

  • PDF

Thermodynamics of the Micellization of Cetylpyridinium Bromide in Some Aqueous Alcohol Solutions (몇 가지 알코올-수용액에서 Cetylpyridinium Bromide의 미셀화의 열역학적 성질)

  • Chung Jong-Jae;Lee Sang-Wook;Choi Joon-Ho
    • Journal of the Korean Chemical Society
    • /
    • v.37 no.1
    • /
    • pp.49-54
    • /
    • 1993
  • The effects of added alcohols on the critical micelle concentration(CMC) of cetylpyridinium bromide(CPB) were investigated by the UV-Vis spectrophotometer at the temperature range of 8∼45$^{\circ}C$. The CMC of CPB was increased with the addition of methanol in the whole temperature region studied, while decreased with the addition of ethanol and propanol. The increase of CMC with the addition of methanol may be attributable to the increasing solvent power of the methanol-water mixture, because methanol was scarcely solubilized into the palisade layer of the micelle of CPB. The decrease of CMC with the inclusion of ethanol and propanol may be derived from the solubilization of alcohols into the micelles. On the other hand, the CMC was decreased with the temperature rise in the low-temperature region below about 25$^{\circ}C$, and the CMC was increased in the high-temperature region above that. The thermodynamic parameters (${\Delta}G_M^{\circ},\;{\Delta}H_M^{\circ},\;and\;{\Delta}S_M^{\circ}$) of the micellization of CPB were obtained in some aqueous alcohol solutions. In the whole temperature region (8∼45$^{\circ}C$), the values of ${\Delta}G_M^{\circ}$ were negative, while those of ${\Delta}S_M^{\circ}$ were positive. And in the temperature region below about 25$^{\circ}C$ the ${\Delta}H_M^{\circ}$ values were positive, while in the temperature region above that the values were negative.

  • PDF

The Effect of Mg Precursors on Optical and Structural Characteristics of Sol-Gel Processed Mg0.3Zn0.7O Thin Films (졸-겔법으로 성장시킨 Mg0.3Zn0.7O 박막의 Mg 전구체의 종류에 따른 광학적·구조적 특성에 관한 연구)

  • Yeom, Ahram;Kim, Hong Seung;Jang, Nak Won;Yun, Young;Ahn, Hyung Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.33 no.3
    • /
    • pp.214-218
    • /
    • 2020
  • In this study, MgxZn1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg0.3Zn0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg2+/Zn2+. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg0.3Zn0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

Scientific Analysis and Conservation Treatment on the Buddhist Scriptures of Paper Relics Excavated from Sum Tolgoi, Mongolia (몽골 숨 톨고이 출토 지류 유물의 과학적 분석 및 보존처리)

  • Bae, Su Bin;Yang, Min Jeong;Kwon, Yun Mi;Yoo, Ji Hyun;Jeong, Hee Won
    • Journal of Conservation Science
    • /
    • v.37 no.6
    • /
    • pp.723-737
    • /
    • 2021
  • This study analyzed the composition and structure of materials with Buddhist paper scriptures excavated from architectural sites in 'Sum Tolgoi' of the 17th century and carried out conservation treatment base on the result of the analysis. The scriptures were covered in dust and foreign sub stances, and were so crumpled that it was impossible to identify the form. The damage, loss, and discoloration have been identified. Buddhist scriptures written in Tibetan used indigo and ink sticks on paper as a result of UV-Vis analysis, and ink sticks as black character materials from scriptures written ancient Mongolian. SEM-EDS and Micro-XRF analyses revealed that the outlines were drawn with red lines using a mix of Minium (Pb3O4) and Cinnabar (HgS), or Cinnabar (HgS) alone, and the contents of the scriptures were written with silver paint. Silver chloride (AgCl) and Calcium (Ca) were identified in the silver paint component of the characters, while Calcium and Orpiment (As2S3) were identified in the yellow lines. Concerning the paper ground, Buddhist scriptures written in ancient Mongolian were characterized by herbal plant fiber and bast fiber, and those written in Tibetan, by bast fiber. Radiocarbon dating indicates that the paper for the scriptures was produced between the 15th and 17th centuries. Conservation treatment of the scriptures was carried out based on the experiment on the production of pre-coated paper and how to coat that to prevent the second damage due to the deformation and fragility of the excavated paper. The scriptures were preserved and mounted, and a neutral box was made to identify the contents of the scriptures recorded on both sides after the treatment. This conservation treatment is the result of a study that applied new conservation treatment materials and methods according to the principle of conservation treatment reversibility.

A STUDY OF THE MECHANISM OF IMPROVING ACID RESISTANCE OF BOVINE TOOTH ENAMEL AFTER PULSED Nd-YAG LASER IRRADIATION (펄스형 Nd-YAG 레이저 조사에 의한 법랑질 내산성 증가 기전에 관한 연구)

  • Lee, Young-Soon;Shon, Heung-Kyu
    • Journal of the korean academy of Pediatric Dentistry
    • /
    • v.23 no.3
    • /
    • pp.640-658
    • /
    • 1996
  • The purpose of this study was to examine the mechanism of improving acid resistance of Nd-YAG laser irradiated tooth enamel and determine the most effective energy density for improving acid resistance. The bovine tooth enamel were lased with a pulsed Nd-YAG laser. The energy densities of exposed laser beam were varied from 10 to $70\;J/cm^2$. To investigate the degree of improving acid resistance by irradiation, all the samples were submerged to demineralize in 0.5 N $HClO_4$ solution for 1 minute. After 1 minute, 0.05 % $LaCl_3$ was added to the solution for interrupting the demineralization reaction. The amounts of dissolved calcium and phosphate in the solution were measured by using an atomic absorption spectrophotometer and the UV/VIS spectrophotometer, respectively. To examine the mechanism of improving acid resistance, X-ray diffraction analysis, infrared spectroscopy, and scanning electron microscopy were taken. The X-ray diffraction pattern of the samples were obtained in the $10^{\circ}{\sim}80^{\circ}2{\theta}$ range with $Cu-K{\alpha}$ radiation using M18HF(Mac Science Co.) with X-ray diffractometer operating at 40 KV and 300 mA. The infra-red spectra of the ground samples in 300 mg KBr pellets 10 mm diameter were obtained in the $4000cm^{-1}\;to\;400cm^{-1}$ range using JASCO 300E spectrophotometer. The scanning electron microscopy was carried out using JSM6400(JEOL Co.) with $500{\sim}2000$ times magnification. The results were as follow 1. The concentration of calcium dissolved from laser irradiated enamel with $50J/cm^2$ was significantly lesser than that of unlased control group (p<0.05) 2. From the result of the X-ray diffraction analysis, $\beta$-TCP, which increases acid solubility, was identified in lased enamel but the diffraction peaks of (002) and (004) became sharp with increasing energy density of laser irradiation. This means that the crystals in lased samples were grown through the c-axis and subsequently, the acid solubility of enamel decreased. 3. The a-axis parameter was slightly increased by laser irradiation, whereas the c-axis parameter was almost constant except for a little decrease at $50J/cm^2$. 4. In the infra-red spectra of lased enamels, phosphate bands ($600{\sim}500cm^{-1}$), B-carbonate bands (870, $1415{\sim}1455cm^{-1}$), and A-carbonate band ($1545cm^{-1}$) were observed. The amounts of phosphate bands and the B-carbonate bands were reduced, on the other hand, the amount of the A-carbonate band was increased by increase the energy density. 5. The SEM experiments reveal that the surface melting and recrystallization were appeared at $30J/cm^2$ and the cracks were observed at $70J/cm^2$. From above results, It may be suggested that the most effective energy density for improving acid resistance of tooth enamel with the irradiation of Nd-YAG laser was $50J/cm^2$. The mechanism of improving acid resistance were reduction of permeability due to surface melting and recrystallization of lased enamel and reduction of acid solubility of enamel due to decrease of carbonate content and growth of crystal.

  • PDF

Effect of Chlorella vulgaris CHK0008 Fertilization on Enhancement of Storage and Freshness in Organic Strawberry and Leaf Vegetables (Chlorella vulgaris CHK0008 시비가 유기농 딸기와 엽채소의 저장성과 신선도 향상에 미치는 영향)

  • Kim, Min-Jeong;Shim, Chang-Ki;Kim, Yong-Ki;Park, Jong-Ho;Hong, Sung-Jun;Ji, Hyeong-Jin;Han, Eun-Jung;Yoon, Jung-Chul
    • Horticultural Science & Technology
    • /
    • v.32 no.6
    • /
    • pp.872-878
    • /
    • 2014
  • This study aimed to enhance storage and freshness of strawberry fruits and foliage vegetables by spray treatment with Chlorella vulgaris as a bio-fertilizer. The tested strain, C. vulgaris CHK0008, was isolated from an organically cultivated rice paddy and identified as C. vulgaris by its morphology and 18S rDNA and 23S rDNA sequence homology. We successfully cultured C. vulgaris CHK0008 in BG11 modified medium (BG11MM) and adjusted $2.15{\times}10^6cell/mL$ C. vulgaris CHK0008 to one OD value by measuring the optical density at 680 nm using a UV-vis spectrophotometer. The soluble solid content of 'Seolhyang' and 'Yukbo' strawberry fruits treated by spray application with C. vulgaris CHK0008 was enhanced by 22.2% and 11.5% respectively, compared to untreated controls. Additionally, the decay rates of treated 'Seolhyang' and 'Yukbo' strawberry fruits decreased 63.8% and 74.4% respectively, compared to untreated control. Surface color changes and chlorosis of leaves in leaf vegetables such as lettuce, kale, red ornamental kale, white ornamental kale and beet were observed in samples treated with water spray for 10 days after cold storage. However, the decay rate of leafy vegetables treated with foliar application of 25% C. vulgaris CHK0008 liquid culture was significantly decreased compared to that of the untreated control during storage at $4^{\circ}C$.

The quality investigation of 6H-SiC crystals grown by conventional PVT method with various SiC powders

  • Yeo, Im-Gyu;Lee, Won-Jae;Shin, Byoung-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.113-114
    • /
    • 2009
  • Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

  • PDF

Fabrication and Study of Transparent Conductive Films ZnO(Al) and ZnO(AlGa) by DC Magnetron Sputtering (DC 마그네트론 스퍼터링법에 의한 대면적 투명전도성 ZnO(Al)와 ZnO(AlGa) 박막제조 및 물리적 특성 연구)

  • Son, Young Ho;Choi, Seung Hoon;Park, Joong Jin;Jung, Myoung Hyo;Hur, Youngjune;Kim, In Soo
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.3
    • /
    • pp.119-125
    • /
    • 2013
  • In this study, we studied the properties of ZnO(Al) and ZnO(AlGa) thin film according to film thickness deposited on SLG by In-line magnetron sputtering system. XRD, FESEM, 4-point probe, Hall measurement system and UV/Vis-NIR spectrophotometer were employed to analyze the properties of ZnO(Al) and ZnO(AlGa) thin film. The all films exhibited (002) preferential orientation with clear peak shape and high intensity. The carrier concentration and Hall mobility of ZnO(Al) and ZnO(AlGa) thin film were improved with increasing thickness. The resistivity of both films decreased when the film thickness was raised from 500 nm to 1,450 nm. And then relatively the resistivity of ZnO(AlGa) film was lower than that of ZnO(Al) film. The transmittance of the films decreased with increasing film thickness but all films exhibited optical transmittances of over 83.3% in the visible region.

Fabrication of Microwire Arrays for Enhanced Light Trapping Efficiency Using Deep Reactive Ion Etching

  • Hwang, In-Chan;Seo, Gwan-Yong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.454-454
    • /
    • 2014
  • Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

  • PDF