• Title/Summary/Keyword: UHV

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Analysis on the Pumping Characteristics of a Commercial Cryopump (상용 크라이오펌프의 배기특성 분석)

  • 인상렬;박미영
    • Journal of the Korean Vacuum Society
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    • v.12 no.2
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    • pp.86-92
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    • 2003
  • The pumping characteristics of a commercial UHV cryopump with a G-M refrigerator for various gases were investigated. The pumping speeds as a function of pumped amount of $H_2,\; D_2,\; He,\; Ar,\; N_2$, CO and the pumping capacity of $N_2$ were measured and the trend was theoretically analyzed. The spectrum change of the residual gas was also investigated during cyropump operation.

Vertical Transport of Protons in Amorphous Ice

  • Moon, Eui-Seong;Kim, Young-Soon;Shin, Sung-Hwan;Kang, Heon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.279-279
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    • 2012
  • In order to estimate the average migration lengths of $H_3O^+$ ions in amorphous ice, we conducted experiments of reactive ion scattering (RIS), low energy sputtering (LES), and reflection absorption IR spectroscopy (RAIRS) with an ultra-high vacuum (UHV) chamber. Dopped water-ice films were grown on the clean surface of Ru single crystal and analyzed with RIS, LES and RAIRS methods. The population changes of probe molecules, which were buried at a controlled distance from the surface, were monitored by those methods so that we can mesure the migration efficiencies. From the measured efficiencies, we evaluated the average migration lengths. This result is expected to give the information about the dynamics of proton in water-ice film.

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Switching of the Dimer-row Direction through Sb-passivation on Vicinal Si(001) Surface of a Single Domain

  • Dugerjav, Otgonbayar;Kim, Hui-Dong;Seo, Jae-Myeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.186-186
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    • 2011
  • [100] 방향으로 4$^{\circ}$ 기울어진 Si(001)-2${\times}$1(vicinal surface)을 초고진공하(UHV)에서 청결하게 하고 열처리하면 rebonded-atom을 가진 DB double step과 이 step에 나란한 아홉 개의 dimer를 가진 평균 폭이 4.0 nm인 single-domain의 (001)-2${\times}$1 테라스의 면으로 재구조된다 [그림 a]. 본 연구에서는 이 표면 위에 Sb을 상온에서 증착하여 덮고 후열처리하면(2 ML, 500$^{\circ}C$ 10 분), Sb-dimer가 Si 표면을 한 층 덮고 (001) 테라스의 Sb-dimer 방향이 DA double-step과 수직을 이루는 1${\times}$2 구조를 이룬다는 사실을 STM으로 확인하였다 [그림 b]. 이러한 Sb-passivation의 효과는 표면 Si-dimer의 부분적으로 채워진 dangling-bond를 Sb-dimer의 완전히 채워진 고립쌍(lone-pair)으로 바꿈으로써 표면 자유 에너지를 줄이고, 나아가 계면 Si 층은 bulk에 유사하게 되는 데에 있다. 이 passivation 된 표면은 Ge/Si 등의 heteroepitaxy에 사용할 수 있고, 특히 single-domain을 유지하며 step 방향에 대해 평행인 dimer-row로 이루어져 있어서 원자나 전자의 이동에 비등방적 효과를 증가시킬 것이 예측된다.

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Current and Voltage Measurement using Optical Sensors (광센서에 의한 전류전압 측정법)

  • Kim, Y.S.;Park, H.S.;Kim, K.H.
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.523-526
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    • 1987
  • The present metering transformer being used for measurement has the characteristics of high reliability and high efficiency. In the future, however, it is thought that the scales of mettering transformer will be larger and the cost of production will increase as the transmission voltage ascends to UHV. And, also, it wilt be not easy to ensure the aseismatic capability. For the purpose of settling these problems, by applying optical sensor technology to electric power systems and by developing optical current transformer and potential transformer, we will realize the saving in energy, reduction of cost prise, improvement in measuring precision.

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Influence of $SF_6$ Gas On An Arc Plasma In UHV Circuit Breaker ($SF_6$ gas가 초고압 차단기 내에서 Arc Plasma에 미치는 영향)

  • Choi, Kyung-Chuel;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.278-282
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    • 1987
  • Computational and theoritical investigations of an arc plasma have been made for the design of a circuit breaker. Modeling of an arc plasma used to be very involved and difficult because of the many variables and factors, In this paper, the dynamic behavior of an arc plasma is investigated by solving the MHD equations. Comparing an $SF_6$-blast arc with a non-blast arc, it has been found that the effect of gas-blast has a great influence on density rather than temperature.

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Flow field Analysis In Puffer Type Interrupters of GIS/GCB (파퍼형 GIS/GCB의 유동특성 해석)

  • Song, K.D.;Shin, Y.J.;Park, K.Y.;Choi, Y.G.;Song, W.P.;Kang, J.H.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1512-1516
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    • 1994
  • FLIC(Fluid in cell) method has been used for analyzing a cold gas flow field in an interrupter of a circuit treater since 1970s. In this paper FLIC method is applied to calculation of a cold gas flow and then combined with the simple are analysis method in order to investigate the flow field characteristics in a puffer type interrupter rated at 145kV 40kA. The results for a cold gas flow agree with the experimental measurement well. The other results such as pressure rise, arc temperature, post-arc current and so forth am also reasonable and show the possibility that the combined program can be applied to the design of UHV interrupters.

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A Study on A Hot Gas Velocity Measurement in GCB Using Small-Gap (Small-Gap을 이용한 가스차단기에서의 열가스 속도측정에 관한 연구)

  • Kim, Hong-Kyu;Song, Ki-Dong;Park, Kyong-Yop;Hong, Jung-Pyo;Chong, Jin-Kyo
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.55 no.3
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    • pp.155-158
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    • 2006
  • $SF_6$ gas circuit breakers we widely used for short circuit current interruption in EHV or UHV power system. For a $SF_6$ gas circuit breaker development, the hot gas velocity measurement is necessary during $SF_6$ gas circuit breaker's trip operation. Small-gap flashover characteristics are used for this hot gas velocity measurement. This study sho was the hot gas velocity measurement results during $SF_6$ gas circuit breaker' trip operation.

Electrode dependences of MFSFET Characteristics using BaMgF$_4$ Thin Films (BaMgF$_4$박막을 이용한 MFSFET특성의 전극의존성)

  • 김채규;정순원;김진규;김용성;이남열;김광호;유병곤;이원재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.465-468
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    • 1999
  • Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

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Thermal treatment dependences of MFS devices in $BaMgF_4$ thin films on silicon structures ($BaMgF_4$ 박막을 이용한 MFS 디바이스의 열처리 의존성)

  • 김채규;정순원;이상우;김광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.59-62
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    • 1998
  • Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

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Breaking test of UHV circuit breaker by ANSI/IEEE standard (ANSI/IEEE를 적용한 초고압 차단기의 차단시험)

  • Park, Seung-Jae;Rhyou, Hyeong-Kee;Kang, Young-Sik;Koh, Heui-Seog
    • Proceedings of the KIEE Conference
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    • 2003.07a
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    • pp.467-469
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    • 2003
  • IEC(International Electrotechnical Commission) 62271-100 has been adopted for the design test of circuit breaker which is used as the main protecting device of power system. But, it is also necessary to separately receive the testing certificate in accordance with ANSI/IEEE standard for getting into the american market. Up to now, several domestic companies have completed the ANSI/IEEE testing in medium circuit breaker of distribution system, but they recently started the ANSI/IEEE testing in ultra high-voltage class of transmission and substation system. This paper introduces the testing techniques and its results for the making and breaking performance of 145kV, 40kA $SF_6$ gas circuit breaker which was firstly performed in KERI(Korea Electrotechnology Institute) by the ANSI/IEEE standard.

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