• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.6
• /
• pp.581-586
• /
• 2018

Cast iron manhole lids cause environmental pollution during the manufacturing process, and the work environment is very poor. In addition, if the height of the manhole cover does not match the height of the road surface, it causes considerable inconvenience and safety problems. This study proposes a height - adjustable steel manhole cover that can replace cast iron manhole covers and easily match the road surface with the upper surface of the manhole cover. Structural analysis was performed to grasp the design variable of the structure of the manhole cover, satisfying the required quality performance. To fabricate a manhole cover that satisfies the required load capacity, the optimal design for the U-shaped reinforcement structure was made. The cylindrical shape of the height adjustment part and the low frame were formed by bending the steel sheet into a circular shape and then welding. Reinforcing bars were also made by bending a steel plate. The height adjustment groove was machined by a CNC milling machine. Four prototypes were fabricated and a load bearing test was carried out, and new manhole cover was made reflecting results of the test. In the load bearing test, there was no breakage of the welded part, and deformation occurred mainly at the contact area between the groove and gusset plate. Deformation of 1 to 2.7mm occurred due to a load of 450kN. On the other hand, after removing the load, there was almost no residual deformation, and the load bearing evaluation was judged to be satisfactory because the manhole cover could be disassembled and reassembled.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.36.2-36.2
• /
• 2009

Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

• Composites Research
• /
• v.19 no.1
• /
• pp.29-35
• /
• 2006

The avoidance of enemy's radar detection is very important issue in the modem electronic weapon system. Researchers have studied to minimize reflected signals of radar. In this research, two types of radar absorbing structure (RAS), 'C'-type shell and 'U'-type shell, were fabricated using fiber-reinforced composite materials and their radar cross section (RCS) were evaluated. The absorption layer was composed of glass fiber reinforced epoxy and nano size carbon-black, and the reflection layer was fabricated with carbon fiber reinforced epoxy. During their manufacturing process, undesired thermal deformation (so called spring-back) was observed. In order to reduce spring-back, the bending angle of mold was controlled by a series of experiments. The spring-back of parts fabricated by using compensated mold was predicted by finite element analysis (ANSYS). The RCS of RAS shells were measured by compact range and predicted by physical optics method. The measured RCS data was well matched with the predicted data.

• Korean Journal of Materials Research
• /
• v.8 no.8
• /
• pp.744-750
• /
• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.