• Journal of the Computational Structural Engineering Institute of Korea
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• v.35 no.5
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• pp.299-308
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• 2022

This study was conducted to predict the tendency for heat exchange and boil-off gas (BOG) in a liquefied hydrogen tank under sloshing excitation. First, athe fluid domain excited by sloshing was modeled using a multiphase-thermal flow domain in which liquid hydrogen and hydrogen gas are in the saturated state. Both the the volume of fluid (VOF) and Eulerian-based multi-phase flow methods were applied to validate the accuracy of the pressure prediction. Second, it was indirectly shown that the fluid velocity prediction could be accurate by comparing the free surface and impact pressure from the computational fluid dynamics with those from the experimental results. Thereafter, the heat ingress from the external convective heat flux was reflected on the outer surfaces of the hydrogen tank. Eulerian-based multiphase-heat flow analysis was performed for a two-dimensional Type-C cylindrical hydrogen tank under rotational sloshing motion, and an inflation technique was applied to transform the fluid domain into a computational grid model. The heat exchange and heat flux in the hydrogen liquid-gas mixture were calculated throughout the analysis,, whereas the mass transfer and vaporization models were excluded to account for the pure heat exchange between the liquid and gas in the saturated state. In addition, forced convective heat transfer by sloshing on the inner wall of the tank was not reflected so that the heat exchange in the multiphase flow of liquid and gas could only be considered. Finally, the effect of sloshing on the amount of heat exchange between liquid and gas hydrogen was discussed. Considering the heat ingress into liquid hydrogen according to the presence/absence of a sloshing excitation, the amount of heat flux and BOG were discussed for each filling ratio.

• Korean Chemical Engineering Research
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• v.53 no.5
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• pp.557-564
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• 2015

The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-$CO_2$ (supercritical-$CO_2$) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-$CO_2$. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-$CO_2$ without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, $25^{\circ}C$) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, $5^{\circ}C$, we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-$CO_2$ (7.5 Mpa, $40^{\circ}C$), we had as good results as those of the case using gas-$CO_2$. Besides the processing time was shortened compared with that of the case of using gas-$CO_2$.