• ETRI Journal
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• 제34권6호
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 1999년도 연약지반처리위원회 학술세미나
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• pp.1-13
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• 1999

The use of Compaction Grouting evolved in the 1950's to correct structural settlement of buildings. Over the almost 50 years, the technology has developed and is currently used in wide range of applications. Compaction Grouting, the injection of a very stiff, 'zero-slump' mortar grout under relatively high pressure, displaces and compacts soils. It can effectively repair natural or man-made soil strength deficiencies in variety of soil formations. Major uses of Compaction Grouting include densifying loose soils or fill voids caused by sinkholes, poorly compacted fills, broken utilities, improper dewatering, or soft ground tunneling excavation. Other application include preventing liquefaction, re-leveling settled structures, and using compaction grout bulbs as structural elements of minipiles or underpinning. The technique replaced slurry injection, or 'pressure grouting', as the preferred method of densification grouting. There are several reasons for the increased use of Compaction Grouting which can be summarized in one word: CONTROL. The low slump grout and injection processes are usually designed to keep the grout in a homogeneous mass at the point of injection, while acceptable in some limited applications, tends to quickly get out of control. Hydraulic soil fracturing can cause extensive grout travel, often well beyond the desired treatment zone. So, on the basis of the two case history constructed in recent year, a study has been peformed to analyze the basic mechanism of the Compaction Grouting and verify the effectiveness of the ground improvement using some test methods.

• 한국생산제조학회지
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• 제9권5호
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• pp.105-111
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than 200~300${\mu}{\textrm}{m}$ has been realized. Over the past four or five years, numerical modeling of microsensors and microstructures has gradually been developed as a field of microelectromechanical system(MEMS) design process. In this paper, we study some of the micromachining processes of single crystal silicon(SCS) for the microaccelerometer, and their subsequent processes which might affect thermal and mechanical loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for component design of microaccelerometer. Temperature rise sufficiently low at the suspended beams. Instead, larger temperature gradient can be seen at the bottom of paddle part. The center of paddle part becomes about 5~2$0^{\circ}C$ higher than the corner of paddle and suspended beam edges.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.314-317
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• 2002

Since the early work of Tersoff and Hamann on the theory of the scanning tunneling microscope (STM), many theoretical approaches have been developed in order to gain further physical insight into the real space image that this technique provides. In this Paper, the STM image of Carbon nanotubes (CNT's) was calculated through the theoretical study. The optimized structure of CNT's was simulated using Brenner's hydrocarbon potential. The structure of simulation is (5. 5) armchair CNT and (10. 0) zigzag CNT. Also we have used that the extended Huckel tight binding (EHTB) theory already provides a fairly good qualitative description of the main processes that control the final contrast in the STM image. we found that the shape of the calculated images is hardly dependent on the exact electronic charge distribution at the surface. The STM images are not too sensitive to the precise electronic structure but, rather, they reflect its qualitative features. As a result of the simulation, The STM images of CNT's and the electronic density distribution were investigated. It found that the EHTB theory is appropriate for STM image calculation and that the STM images are in agreement with the result of Experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.7-8
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• 2008

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

• Geomechanics and Engineering
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• 제16권2호
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• pp.205-215
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• 2018

Strain-based criteria are known as a direct method in determining the stability of the geomechanical structures. In spite of the widely use of Sakurai critical strain criterion, it is so conservative to make use of them in rocks with initial plastic deformation on account of the considerable difference between the failure and critical strains. In this study, a new criterion has been developed on the basis of the failure strain to attain more reasonable results in determining the stability status of the tunnels excavated in the rocks mostly characterized by plastic-elastic/plastic behavior. Firstly, the stress-strain curve was obtained having conducted uniaxial compression strength tests on 91 samples of eight rock types. Then, the initial plastic deformation was omitted making use of axis translation technique and the criterion was presented allowing for the modified secant modulus and by use of the failure strain. The results depicted that the use of failure strain criterion in such rocks not only decreases the conservativeness of the critical strain criterion up to 42%, but also it determines the stability status of the tunnel more accurately.

• 한국응용과학기술학회지
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• 제20권2호
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• pp.148-153
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• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.47-51
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• 2008

The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

• Maxillofacial Plastic and Reconstructive Surgery
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• 제39권
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• pp.24.1-24.6
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• 2017

Background: Tunneled transposition of the facial artery myomucosal (FAMM) island flap on the lingual side of the mandible has been reported for intraoral as well as oropharyngeal reconstruction. This modified technique overcomes the limitations of short range and dentition and further confirms the flexibility of the flap. This paper presents a case of reconstructing secondary soft palatal defect due to flap necrosis following two-flap palatoplasty in irradiated patient with lingually transposed facial artery myomucosal island flap. Case presentation: The authors successfully reconstructed secondary soft palatal defect due to flap necrosis following two-flap palatoplasty in an irradiated 59-year-old female patient with tunnelized-facial artery myomucosal island flap (t-FAMMIF). Conclusions: Islanding and tunneling modification extends the versatility of the FAMM flap in the reconstruction of soft palatal defects post tumor excision and even after radiation, giving a great range of rotation and eliminating the need for revision in a second stage procedure. The authors thus highly recommend this versatile flap for the reconstruction of small and medium-sized oral defects.

• 한국재료학회지
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• 제30권7호
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• pp.333-337
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• 2020

Orthorhombic DyMnO₃ films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO₃ single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO₃ films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.