• Journal of Magnetics
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• 제9권1호
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.141-144
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• 2000

We report on the influence of d-wave pairing symmetry in high-T$_c$ superconductor by tunneling spectroscopy. The zerobias conductance peak(ZBCP) which is produced by tunneling through the ab-plane is observed on both of metal Au/YBa$_2$Cu$_3$O$_y$(N/S) tunnel junctions and ferromagnet Co/Au/ YBa$_2$Cu$_3$O$_y$(F/N/S) tunnel junctions. The effects of Andreev reflection on the differential conductance of each junctions are dependent on the tunnel direction. For the S/N/F junction, it appears the suppression of the ZBCP due to the suppression of Andreev reflection at the interface between a ferromagnetic material and a d-wave superconductor. By comparing these experimental results with recent theoretical works on Andreev reflection, the existence of Andreev bound state is verified in high-T$_c$ superconductor, due to the d-wave symmetry of the pair potential.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.152-153
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• 2002

The report on large tunneling magnetoresistance (TMR) at room temperature in magnetic tunnel junctions (MTJ), composed of two ferromagnetic electrodes separated by a thin insulating barrier, has ignite the intensive research both from scientific and technological points of view. A simple model proposed by Juliere has explained the observed TMR surprisingly well, where the TMR is expressed in terms of the spin polarization P of the ferromagnetic electrodes. (omitted)

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.9-14
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• 2000

We report on the novel nonequilibrium nlicrowave emission from quasiparticle-injected high-Tc superconductors. The phenomena have been observed for the current-injected YBCO/I/Au or BSCCO/I/Au thin-film tunnel junctions and BSCCO single-crystal intrinsic Josephson mesa junction samples. For the thin-film tunnel junctions, the emitted radiation appears as broadband. For the intrinsic BSCCO mesa samples, the radiation appears as three different modes of emissions depending on the bias point in the hysteretic current-voltage characteristics; Josephson-emission, nonequilibrium broad emission and sharp coherent microwave emission. The results were interpreted by the Josephson plasma excitation model due to quasiparticle injection.

• Journal of Magnetics
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• 제7권2호
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.124-124
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• 2006

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2004년도 제35차 춘계학술대회
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• pp.93-93
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• 2004

• 한국자기학회지
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• 제13권2호
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• pp.47-52
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• 2003

DC 마그네트론 스파터법과 RLSA(Radial Line Slot Antenna)을 이용한 마이크로파 여기 프라즈마를 이용하여 Ta/Cu/Ta/NiFe/Cu/Mn$_{75}$Ir$_{25}$/ $Co_{70}$Fe$_{30}$/Al-oxide 구조의 접합을 제조한 후, contact-mode AM(Atomic Force Microscope)을 이용하여 Al 산화막의 국소전도 특성의 평가를 수행하였다. AFM 동시전류측정으로부터, 얻어지는 표면상과 전류상은 대응하지 않는다. 국소 전류-전압(I-V)의 측정 결과, 전류상은 절연층의 barrier height의 분포를 나타내고 있다는 것을 알았다.다.다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.66-67
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• 2002

Magnetic tunnel junction에서는 spin의 tunneling이 가장 기본적인 현상이기 때문에 tunnel junction의 특성은 tunnel barrier의 성질에 크게 의존한다. Tunnel barrier로는 지금까지 $Al_2$O$_3$가 주로 사용되고 있다. 하지만 $Al_2$O$_3$의 경우는 barrier height가 2-3 eV로 높기 때문에 저 저항의 tunnel junction을 형성하기 위해서는 Al의 두께가 1nm 이하로 낮아져야 한다. 따라서 이를 극복하기 위해서 $Al_2$O$_3$ 보다 낮은 barrier height를 갖는 절연막을 tunnel barrier로 사용하고자 하는 연구가 많이 진행되고 있다 (예를 들면 TaOx [1], ZrOx [2], GaOx [3], and HfOx [4]). (중략)

• Journal of Magnetics
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• 제6권4호
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.