• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.197-197
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• 2011

In this study, in contrast with cases in which Scanning Tunneling Microscopy (STM) tip-induced reactions were instigated by the tunneling electrons, the local electric field, or the mechanical force between a tip and a surface, we found that the tungsten oxide (WO3) covered tungsten (W) tip of a STM acted as a chemical catalyst for the S-H dissociative adsorption of phenylthiol and 1-octanethiol onto a Ge(100) surface. By varying the distance between the tip and the surface, the degree of the tip-catalyzed adsorption could be controlled. We have found that the thiol head-group is the critical functional group for this catalysis and the catalytic material is the WO3 layer of the tip. After removing the WO3 layer by field emission treatment, the catalytic activity of the tip has been lost. 3-mercapto isobutyric acid is a chiral bi-functional molecule which has two functional groups, carboxylic acid group and thiol group, at each end. 3-Mercapto Isobutyric Acid adsorbs at Ge(100) surface only through carboxylic acid group at room temperature and this adsorption was enhanced by the tunneling electrons between a STM tip and the surface. Using this enhancement, it is possible to make thiol group-terminated surface where we desire. On the other hand, surprisingly, the WO3 covered W tip of STM was found to act as a chemical catalyst to catalyze the adsorption of 3-mercapto isobutyric acid through thiol group at Ge(100) surface. Using this catalysis, it is possible to make carboxylic acid group-terminated surface where we want. This functional group-selective adsorption of bi-functional molecule using the catalysis may be used in positive lithographic methods to produce semiconductor substrate which is terminated by desired functional groups.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.513-519
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• 2001

We proposed Si-rich tungsten silicide (WSix) films for alternate gate electrode of deep-submicron MOSFETs. The investigation of WSix films deposited directly on SiO$_2$ indicated that the annealing of as-deposited films using a rapid thermal processor (RTP) results in low resitivity, as well as negligible fluorine (F) diffusion. Specifically, the resitivity of RTP-annealed samples at 800 $^{\circ}C$ for 3 minutes in vacuum was ~160 $\mu$$\Omega$ . cm, and the irregular growth of an extra SiO$_2$ layer due to F diffusion during annealing has not been observed. In addition, the analysis of the WSix-SiO$_2$-Si (MOS) capacitors exhibits excellent electrical characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.141-148
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• 1999

High quality pure and Nb-doped $PbWO_{4}$ Single Crystal were grown from a 50 %~50 % mixture of Lead oxide (PbO) and Tungsten oxide $(WO_{3})$ by Czochralski method in Iridium crucible. The stoichiometric deviation correspond to the selective loss of the crystal constituents is found to be responsible for the yellowish coloration of $PbWO_{4}$. Through the X-ray powder diffraction experiment, we have investigated the lattice constant variations of each $PbWO_{4}$ crystals. We also present information on their photoluminescence (PL), optical absoption properties and Raman spectra. The temperature dependence of PL intensity and FWHM (Full Width Half Maximum) were measured in the temperature range 10 K~300 K. One observes a slight temperature dependence in the low temperature region and PL intensity decreases over 200 K by thermal quenching. The activation energy, Huang-Rhys coupling constant and inhomogenious brodenning acquired from their temperature dependence.

• The korean journal of orthodontics
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• v.48 no.4
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• pp.245-252
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• 2018

Objective: We aimed to perform in-vitro evaluation to compare 1) shear bond strength (SBS), adhesive remnant index (ARI), and color change between self-etched and acid-etched primers; 2) the SBS, ARI and color change between direct and indirect bonding; and 3) the enamel roughness (ER) between 12-blade bur and aluminum oxide polisher debonding methods. Methods: Seventy bovine incisors were distributed in seven groups: control (no bonding), direct (DTBX), and 5 indirect bonding (ITBX, IZ350, ISONDHI, ISEP, and ITBXp). Transbond XT Primer was used in the DTBX, ITBX, and ITBXp groups, flow resin Z350 in the IZ350 group, Sondhi in the ISONDHI group, and SEP primer in the ISEP group. SBS, ARI, and ER were evaluated. The adhesive remnant was removed using a low-speed tungsten bur in all groups except the ITBXp, in which an aluminum oxide polisher was used. After coffee staining, color evaluations were performed using a spectrophotometer immediately after staining and prior to bonding. Results: ISONDHI and ISEP showed significantly lower SBS (p < 0.01). DTBX had a greater number of teeth with all the adhesive on the enamel (70%), compared with the indirect bonding groups (0-30%). The ER in the ITBX and ITBXp groups was found to be greater because of both clean-up techniques used. Conclusions: Direct and indirect bonding have similar results and all the primers used show satisfactory adhesion strength. Use of burs and polishers increases the ER, but polishers ensure greater integrity of the initial roughness. Resin tags do not change the color of the teeth.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.2
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• pp.297-305
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• 2000

It is observed that the initial properties and degradation characteristics on plasma of n/p-MOSFET with polycide and poly-Si as different gate materials under F-N stress and hot electron stress are affected by metal AR(Antenna Ratio) during plasma process. Compared to that of MOS devices with poly-Si gate material, reliability properties on plasma of MOS devices with polycide gate material are improved. This can be explained by that fluorine of tungsten polycide process diffuses through poly-Si into gate oxide and results in additional oxide thickness. The fact that MOS devices with polycide gate material can reduce damages of plasma process shows possibility that polycide gate material can be used as gate material for next generation MOS devices.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• Proceedings of the Plant Resources Society of Korea Conference
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• 2018.04a
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• pp.93-93
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• 2018

This study disclosed the aqueous fruits extract of Rubus coreanus as a sustainable agent for the synthesis of Rubus coreanus zinc oxide nanoparticle (Rc-ZnO Nps) using as a reducing and capping precursor for co-precipitation method. The development of Rc-ZnO was assured by white precipitated powder and analyzed by spectroscopic and analytical instruments. The UV-visible (UV-Vis) studies indicate the maximum absorbance at 357nm which confirmed the formation of ZnO Nps and the purity, functional group and monodispersity were assured by field emission transmission electron microscopy (FE-TEM), Fourier Transform Infrared (FTIR) Spectroscopy and dynamic light scattering (DLS). The X-ray powder diffraction (XRD) data revealed the Nps is 23.16 nm in size, crystalline in nature and possess hexagonal wurtzite structure. The Rc-ZnO Nps were subjected for catalytic studies. The Malachite Green dye was degraded by Rc- ZnO NPs in both dark and light (100 W tungsten) conditions and it degraded about 90% at 4 hours observation in both cases. The biodegradable, low cost Rc-ZnO NPs can be a better weapon for waste water treatment.