• 한국분말재료학회지
• /
• 제15권4호
• /
• pp.314-319
• /
• 2008

Nano-sized tungsten disulfide ($WS_2$) powders were synthesized by chemical vapor condensation (CVC) process using tungsten carbonyl ($W(CO)_6$) as precursor and vaporized pure sulfur. Prior to the synthesis of tungsten disulfide nanoparticles, the pure tungsten nanoparticles were produced by same route to define the optimum synthesis parameters, which were then successfully applied to synthesize tungsten disulfide. The influence of experimental parameters on the phase and chemical composition as well as mean size of the particles for the produced pure tungsten and tungsten disulfide nanoparticles, were investigated.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.361.2-361.2
• /
• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.