• 한국진공학회지
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• 제5권4호
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• pp.327-332
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• 1996

Tungsten(W) polycide gate 구조에서 $WSi_x$의 두께가 증가하면 열처리 공정 후 Gate oxide의 두께가 증가하며, 전기적 신뢰도가 열화 되는 현상이 발생한다. 이러한 특성 열화를 일으키는 지배적인 요인은 $WSi_x$ 증착 공정 중 유입되어 후속 열 공정에 의하여 gate oxide로 환산되는 fluorine인 것으로 밝혀졌다. 이러한 현상을 규명하기 위하여 fluorine ion implantation된 poly Si과의 특성을 비교하였으며, SIMS 및 단면 TEM을 이용한 미세 구조 연구를 실시하였다. 그러나 $WSi_x$의 두께가 600$\AA$ 이상부터는이러한 특성 열화가 포화되는 현상이 관찰되었다. 600$\AA$ 이상의 $WSi_x$ 두께에서는 미세 구조가 표면이 거칠고, porous한 phase로 구성된 상부 구조와 비교적 dense하고, 매끈한 계면 상태를 갖는 하부 구조로 이루어졌으며, porous한 표면 부위는 후속 열공정 중 oxygen-rich한 phase로 변하여 fluorine을 포획하여 oxide로의 확산을 억제하여 특성 열화가 포화되는 것으로 해석되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.25.2-25.2
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• 2011

The tungsten oxide wire-like nanostructure is fabricated by deposition and thermal oxidation of tungsten metal on porous single wall carbon nanotubes (SWNTs). The morphology and crystalline quality of materials are investigated by SEM, TEM, XRD and Raman analysis. The results prove that $WO_3$ wire-like nanostructure fabricated on SWNTs show highly porous structures. Exposure of the sensors to NH3 gas in the temperature range of 150~300$^{\circ}C$ resulted in the highest sensitivity at $250^{\circ}C$ with quite rapid response and recovery time. Response time as a function of test concentrations and NH3 gas sensing mechanism is reported and discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.157-157
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• 1999

Electrochromic tungsten oxide films were prepared by the electron beam deposition, and the dependence of the electrochemical stability and the optical properties on the titanium concentration, and on the annealing temperature, that was investigated. coloring and bleaching experiments were repeated by cyclic voltammetry in a propylene carbonate solution of LiClO4. Spectrometry was used to assess the stability of the transmittance in the degraded films. Tungsten oxide films with titanium contents of about 10~15 mol% were found to be most stable, undergoing the least degradation during the repeated for coloring and bleaching cycles. The reason for this small amount of degradation was the reduction of lithium ion trapping sites in the films, which results in an increased durability. Tungsten oxide films with titanium contents of about 20 mol% were annealed at 20$0^{\circ}C$ for 1 hour, and this results showed that durability of films were increased.

• 한국표면공학회지
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• 제30권2호
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• pp.121-127
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• 1997

Vanadium tungsten oxide thin films were formed by RF magnetron sputtering and the effects of tungsten addition on the crystallinity and on the electrochemical behavior were investigated. X-ray analysis revealed that amorphized films could be obtained by tungase addition. In order to investigate the electrochemical behavior of the vanadium tungsten oxide films, electrochemical insertion and extraction of lithium were out in 1m $LiCIO_4$-PC-DME electrolyte using litium metal as a counter electrode. When the tungsten was added to the $V_2O_5$ films, cycling reversibility was considerably improved. Electrochemical test showed the cell capacity of about $70\mu\;Ah/\textrm{cm}^2-\mu\textrm{m}$ when the amount of additive tungseten reached 30 atomic percent. No appreciable degradation of the cell capacity could be observed after hundred cycles of insertion and extration od Li.

• 한국분말재료학회지
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• 제26권1호
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• pp.28-33
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• 2019

The gas sensor is essential to monitoring dangerous gases in our environment. Metal oxide (MO) gas sensors are primarily utilized for flammable, toxic and organic gases and $O_3$ because of their high sensitivity, high response and high stability. Tungsten oxides ($WO_3$) have versatile applications, particularly for gas sensor applications because of the wide bandgap and stability of $WO_3$. Nanosize $WO_3$ are synthesized using the hydrothermal method. As-prepared $WO_3$ nanopowders are in the form of nanorods and nanorulers. The crystal structure is hexagonal tungsten bronze ($MxWO_3$, x =< 0.33), characterized as a tunnel structure that accommodates alkali ions and the phase stabilizer. A gas detection test reveals that $WO_3$ can detect acetone, butanol, ethanol, and gasoline. This is the first study to report this capability of $WO_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.354-355
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• 2009

In the fabrication of inverted top-emitting organic light emitting diodes (ITOLEDs), the sputtering process is needed for deposition of transparent conducting oxide (TCO) as top anode. Energetic particle bombardment, however, changes the physical properties of underlying layers. In this study, we examined plasma process effects on tungsten oxide ($WO_3$) hole injection layer (HIL). From our results, we suggest the theoretical mechanism to explain the correlation between the physical property changes caused by plasma process on $WO_3$ HIL and degradation of device performances.

• 한국분말재료학회지
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• 제12권2호
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• pp.112-116
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• 2005

In the present study, the focus is on the analysis of carbothermal reduction of oxide powder prepared from waste WC/Co hardmetal by solid carbon under a stream of argon for the recycling of the WC/Co hard-metal. The oxide powder was prepared by the combination of the oxidation and crushing processes using the waste $WC-8 wt.\%Co$ hardmetal as the raw material. This oxide powder was mixed with carbon black, and then this mixture was carbothermally reduced under a flowing argon atmosphere. The changes in the phase structure and gases discharge of the mixture during carbothermal reduction was analysed using XRD and gas analyzer. The oxide powder prepared from waste $WC-8wt.\%Co$ hardmetal has a mixture of $WO_{3} and CoWO_{4}$. This oxide powder reduced at about $850^{\circ}C$, formed tungsten carbides at about $950^{\circ}C$, and then fully transformed to a mixed state of tungsten carbide (WC) and cobalt at about $1100^{\circ}C$ by solid carbon under a stream of argon. The WC/Co composite powder synthesized at $1000^{\circ}C$ for 6 hours from oxide powder of waste $WC-8wt.\%Co$ hardmetal has an average particle size of $0.3 {\mu}m$.

• 센서학회지
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• 제17권1호
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• pp.9-14
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• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• 한국재료학회지
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• 제21권12호
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• pp.703-707
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• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

• 대한화학회지
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• 제40권1호
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• pp.37-43
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• 1996

텅스텐을 작업 전극으로 사용하여 순환 전압-전류법으로 합성한 폴리아닐린 막의 전기화학적 임피던스를 0.1M 황산 용액에서 측정하였다. 전기 전도성을 갖는 퍼텐셜 영역에서는 고분자 막의 큰 축전-용량과작은 저항이 직렬로 연결된 전기화학 쎌이 관측되었다. 순수한 텅스텐에 입혀진 폴리아닐린은 접촉 저항을 무시할 수 있었으나, 산화 전극 막이 입혀진 텅스텐의 경우는 산화 전극 막의 저항과 접촉 저항이 관측되었다. 측정된 임피던스 데이터로부터 전극의 등가 회로를 추정하였으며, 이 등가 회로를 토대로 하여 폴리아닐린-막 안에 혼입된 이온의 물질 이동 파라미터를 산출하였다.