• 한국해양학회지
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• v.15 no.2
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• pp.108-111
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• 1980

The sampling was made by a kind of trap nets and an electric fishing apparatus in the lagoons of Arcachon Bay. Length frequency distributions obtained by two gears are combined to propose more reliable length composition of the population. The biomass was estimated by the capture and recapture method in a limited area with electric fishing apparatus, and it was redressed based on the corrected length composition. It showed approximately 638kg/ha in the deeper parts of the lagoons. It suggests that the lagoons of Arcachon Bay contain relatively high density of eels.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.39 no.spc1
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• pp.223-230
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• 2006

We investigated the spring and summer community structure of meiobenthos in a tidal-falt near Iwon, Korea, in 2002 and 2003. In total, 12 meiofaunal groups were found in the study area among which nematodes were the most dominant. Benthic foraminiferans, harpacticoid copepods, polychaetes, and crustacean nauplli were also dominant groups at all sites. The total density of meiobenthos at each station was be 246-2,177 ind./$10cm^2$. As the depth of sediment increased, the density of meiobenthos at each station gradually decreased. Changes in the vertical distribution of meiobenthos in the study area occurred mainly near the sediment surface (0-1 cm). Generally, between spring and summer the density of nematodes increased, and the density of other dominant meiofaunal groups (benthic harpacticoids, crustacean nauplii, benthic foraminiferans) decreased near the sediment trap the control site of sediment traps compared to that at the control site. The results of cluster and multidimensional scaling plots indicate that the meiofaunal community changed following construction of a low artificial wood groin structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1294-1303
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• 1988

Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.664-674
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• 2016

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

• Korean journal of applied entomology
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• v.42 no.2
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• pp.125-132
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• 2003

Seasonal fluctuations in density of mosquito species were investigated at two cow sheds near to a large, reedy marsh with fairly polluted brackish water near the coast of Yongam-ri, Cheongryang-myon, Ulsan, Korea. Female mosquitoes were collected biweekly using Nozawa light traps from March to September, from 1999 to 2001. On average, 4,416.1, 5,505.9 and 6,863.8 females per trap night were collected from 10 species in 5 genera in 1999, 2000 and 2001, respectively. Among them, An. sinensis was most abundant (53.4% in species ratio), followed by Cx. tritaeniorhynchus (43.0%), Cx. inatomii (1.6%), Ochlerotatus dorsalis (1.3%) and Cx. pipiens pallens (0.5%). A malaria vector, An. sinensis and a Japanese encephalitis vector, Cx. tritaeniorhynchus were collected 3,663.3 females and 3,142.5 females per trap night from June to September for the years, respectively. According to the biweekly population changes at the area, Cx. inatomii which was dominant species in 1997, was the most abundant in the early July during 1999-2001.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.65.4-65.4
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• 2017

The laboratory astrophysics is a new emerging field of basic sciences, and has tremendous discovery potentials. The laboratory astrophysics investigates the basic physical phenomena in the astrophysical objects in controlled and reproducible manners, which has become possible only recently due to the newly-established intense photon and ion beam facilities worldwide. In this presentation, we will introduce several promising ideas for laboratory astrophysics programs that might be readily incorporated in the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). For example, precise spectroscopic measurements using Electron Beam Ion Trap (EBIT) and intense X-ray photons from the PAL-XFEL can be performed to explore the fundamental processes in high energy X-ray phenomena in the visible universe. Besides, in many violent astrophysical events, the energy density of matter becomes so high that the traditional plasma physics description becomes inapplicable. Generation of such high-energy density states can be also be achieved by using the intense photon beams available from the PAL-XFEL.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.212-222
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• 1992

To use polycrystalline Si Thin Film Transistor (poly-Si TFT) in high density SRAM instead of High Load Resistor (HLR), TFT is needed to show good electrical characteristics such as large carrier mobility, low leakage current, high driver current and low subthreshold swing. To satisfy these electrical characteristics, the trap state density must be reduced in the channel poly. Technological issues pertinent to the channel poly fabrication process are investigated and discussed. They are solid phase growth (SPG), Si-ion implantation, laser annealing and hydrogenation. The electrical properties of several CVD oxides used as the gate oxide of TFT are compared. The dependence of the electrical characteristics of TFT on source-drain ion-implantation dose, drain offset length and dopant lateral diffusion are also described.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.601-606
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• 1994

This paper describes the effect of elongation on electrical properties and molecular structrue of high density polyethylene. Thin polyethylene films films obtained dy roll elongation after extruded at 220$^{\circ}C$ and elongated to draw rations of 16. Crystallinity of polyethylene films was measured by X-Ray diffraction and electrical properties were estimated by conductivity and TSC(Thermal Simulated Current). It was foung that the crystallinity increases and the electrical conductivity decreases as the elongation increases. The elongation dependence of electrical conductivity may be explained by the trap density. Thus, the control of polymer structure and crystallinity makes its properties better and can be applicated in order to get more active properties.