• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.191-194
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• 1998

In this paper, the physical and conductivity properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. The specimens of the low density polyethylene of thickness 100[$\mu\textrm{m}$] irradiated as each 1 [Mrad], 2[Mrad], 4[Mrad], 8[Mrad], 16[Mrad] and virgin are used in this experiment. In order to measure the conductivity properties, the micro electrometer is used, the range of temperature and app1ying voltage are 20 to 120[$^{\circ}C$], from 100 to 1000[V] respectively So. as a result of the conductivity properties, it is confirmed that the conductivity is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• Korean Journal of Organic Agriculture
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• v.25 no.4
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• pp.759-772
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• 2017

This experiment was conducted to develop control method for Bemisia tabaci (Gennadius) on eggplant using sticky trap method. According to the color of the sticky traps, the attractiveness of the B. tabaci was the highest in the yellow trap, followed by the green and orange. However, white, blue, red, black and green sticky traps have reduced attractiveness of B. tabaci. In order to improve the efficiency and attractiveness of sticky trap to the B. tabaci, the different kinds of sugars such as glucose, fructose, oligosaccharide, starch syrup and pure sugar were added to sticky traps respectively. However, the effect of B. tabaci attractiveness was low in starch syrup, pure sugar, and non-treated sticky traps. The attracting effect of B. tabaci was depending on the location of sticky trap. The highest value was obtained where sticky traps were located in the top of the eggplant, followed by 30 cm above from the top level. In addition, we were installed up to 40 sticky traps to determine the optimal amount of sticky traps to control B. tabaci in eggplant. When increasing the sticky traps, the number of adult and nymphs of B. tabaci were tended to be decreased significantly. This tendency was more effective in the latter stages than in the early stages. As the number of sticky traps increased, not only the growth rate of eggplant, leaf length, and stem diameter were to be better. But also number of fruits and product marketable value were increased at the early stage of growing as well. The study had proven that the sticky traps had an effect on increasing the yield at the early stage of growth, but the efficiency of controlling decreased due to the high density of B. tabaci of the next generation.

• Journal of IKEEE
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• v.25 no.3
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• pp.501-505
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• 2021

In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO₂ and the mixed layers of HfO₂ and Al₂O₃, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO₂ was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm²/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO₂ and Al₂O (2:1, 1:1), the mobilities and SS were 26.4 cm²/Vs (2:1), 16.8 cm²/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al₂O₃ ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al₂O₃.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.340-340
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• 2012

최근 MOS 소자들이 게이트 산화막을 Mono-layer가 아닌 Multi-Layer을 사용하는 추세이다. Bulk와 High-k물질간의 Dangling Bond를 줄이기 위해 Passivation 층을 만드는 것을 예로 들 수 있다. 이러한 Double Layer의 쓰임이 많아지면서 계면에서의 Interface State Density의 영향도 커지게 되면서 이를 측정하는 방법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 $SiO_2$ Double Layer의 Interface State Density를 Conductance Method를 사용하여 구하는 연구를 진행하였다. Wet Oxidation과 Chemical Vapor Deposition (CVD) 공정을 이용하여 $SiO_2$ Double-layer로 증착한 후 Aluminium을 전극으로 하는 MOS-Cap 구조를 만들었다. 마지막 공정은 $450^{\circ}C$에서 30분 동안 Forming-Gas Annealing (FGA) 공정을 진행하였다. LCR meter를 이용하여 high frequency C-V를 측정한 후 North Carolina State University California Virtual Campus (NCSU CVC) 프로그램을 이용하여 Flatband Voltage를 구한 후에 Conductance Method를 측정하여 Dit를 측정하였다. 본 연구 결과 Double layer (Wet/CVD $SiO_2$)에 대해서 Conductance Method를 방법을 이용하여 Dit를 측정하는 것이 유효하다는 것을 확인 할 수 있었다. 본 실험은 앞으로 많이 쓰이고 측정될 Double layer (Wet/CVD $SiO_2$)에 대한 Interface State Density의 측정과 분석에 대한 방향을 제시하는데 도움이 될 것이라 판단된다.

• Korean journal of applied entomology
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• v.54 no.2
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• pp.73-81
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• 2015

A Cohort based model for temperature-dependent population dynacmics of Riptortus pedestris was constructed by using a commercial software (DYMEX) and seasonal occurrence along with pesticide treatments effect was simulated and validated with pheromone trap data. Ten modules of DYMEX software were used to construct the model and Lifecycle module was consisted of seven developmental stages (egg, 1 - 5 nymphal instars, and adult) of R. pedestirs. Simulated peaks of adult populations occurred three or four times after the peak of overwintered populations which was similar to those observed from pheromone trap catch. Estimated dates for the second peak were quite similar (1-2 day difference) with those observed with pheromone trap. However, the estimated dates for the first population peak were 9-16 days later than the observed dates by pheromone trap and the estimated dates for the last peak were 17-23 days earlier than the observed dates. When insecticide treatments were included in the simulation, the biggest decrease in R. pedestris adult density occurred when insecticide was applied on July 1 for the first peak population: the estimated adult density of the second peak was 3% of untreated population density. When insecticide was assumed to be applied on August 30 for the second peak population, the estimated adult density of the following generation was about 25% of untreated population and the peak density of the following generation reached about two weeks later than untreated population. These results can be used for the efficient management strategies for the populations of R. pedestris.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.6
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• pp.582-589
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• 1991

We used Cd Se as the semiconductor to analyze the Poly-TFT. Cd Se TFT is fabricated by the vacuum evaporation method and the characteristics curves of the current-voltage are obtained using the results of measurement of Cd Se TFT devices. Employing least square method and Rosenbrock algorithm, we can extract the device parameters(grain boundary mobility, trap density). The current-voltage relations calculated by extracted parameters are in good agreement with experimental results.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.