• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
• /
• pp.21-21
• /
• 2003

Microstructure and magnetic transport phenomina in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN (3 nm)/Co (t nm)]...$\sub$10/ with t$\sub$Co/=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1,2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR value of Δ$\rho$/$\rho$$\sub$0/=1.8 %. As t$\sub$Co/ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. Tunneling barrier called "decay length for tunneling" for the films having the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$\^$-1/.

• Journal of Magnetics
• /
• 제8권2호
• /
• pp.98-102
• /
• 2003

Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.73-76
• /
• 1999

We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of $I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method.

• 한국전기전자재료학회논문지
• /
• 제37권3호
• /
• pp.309-313
• /
• 2024

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

• 한국재료학회지
• /
• 제20권6호
• /
• pp.294-300
• /
• 2010

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to $553\;cd/m^2$ and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were $1724\;cd/m^2$ and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

• 한국정보통신학회논문지
• /
• 제22권1호
• /
• pp.190-195
• /
• 2018

최근 지속되는 사이버 공격의 증가와 개인정보 보호에 대한 인식 강화로 많은 인터넷 서비스는 보안 프로토콜을 사용하여 트래픽을 암호화한다. 기존의 보안 프로토콜은 보통 전송 계층과 응용 계층 사이에서 추가적인 계층을 가지며 전송하는 모든 트래픽을 암호화하므로 추가적인 비용이 발생한다. 이로 인해 기밀성이 요구되지 않는 데이터도 암호화하므로 불필요한 성능저하가 발생한다. 따라서 본 논문에서는 응용 계층의 사용자가 기밀성이 요구되는 데이터만을 선택적으로 암호화할 수 있게 지원하는 TCP OENC(Optional Encryption)를 제안한다. TCP OENC는 TCP 옵션으로 동작하여 응용 계층이 요구 할 때만 전송되는 TCP 스트림을 암호화하도록 지원하고, TCP 계층과 응용 계층간의 투명성을 보장한다. 이를 확인하기 위해 구현된 TCP OENC를 개발 보드에서 TCP 세션의 스트림을 선택적으로 암호화하는 것을 검증하였고, 암호화된 스트림의 전송 수행 시간을 측정하여 성능을 분석하였다.

• 한국정보과학회논문지:정보통신
• /
• 제35권5호
• /
• pp.374-383
• /
• 2008

무선랜(Wireless LAN)으로 현재 널리 쓰이고 있는 IEEE 802.11 표준 프로토콜은 채널상태에 따라 다양한 데이타 전송률(data rate)을 지원한다. 서로 다른 데이타 전송률을 사용하는 여러 단말들이 동일한 무선랜에 존재할 경우 낮은 전송률을 사용하는 단말 때문에 높은 전송률을 지원하는 단말의 처리율이 저하되는 성능 이상(Performance Anomaly) 문제가 발생한다. 이러한 성능 이상 문제를 해결하는 방법으로 모든 단말에 동일한 전송시간을 제공하는 시간 공정성(Temporal Fairness) 개념이 제안되었다. 그러나 현재 제안된 대부분의 시간 공정성 제공방안은 MAC 계층에서 보낼 패킷이 항상 있는 상황을 가정하여 전송계층 프로토콜의 특성은 고려하지 않았다는 제약점을 가지고 있다. 본 논문에서는 대표적인 전송계층 프로토콜인 TCP와 UDP가 사용되는 환경에서 현재까지 제시된 시간 공정성 제공방안이 어떤 성능을 보이는지 분석하고, 전송계층의 특성 때문에 발생하는 문제점들을 해결하기 위해서 AP에 높은 우선 순위를 제공하는 AP 우선순위 방법과 노드의 CWmin 을 조절하는 동적 CWmin 조절 방안을 제안한다. 제안한 방법을 적용하면 다중 데이타 전송률을 사용하는 무선랜에서 전송계층으로 TCP, UDP 프로토콜이 혼재할 경우에도 전체적인 시간 공정성을 유지할 수 있고 전체 데이타 처리율(total throughput)이 향상된다는 것을 컴퓨터 시뮬레이션을 이용하여 검증하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제18권2호
• /
• pp.89-92
• /
• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

• 대기
• /
• 제14권4호
• /
• pp.3-18
• /
• 2004

Neglecting the vertical transport from the surface, most of the previous studies on the long-range transport of pollutants have only considered the horizontal transport caused by the free atmosphere wind. I used a three dimensional numerical model, MM5 (The fifth generation Penn State Univ./NCAR Mesoscale Model) for the simulation of vertical transport of pollutants and investigated the mechanism of the vertical transport of atmospheric pollutants between planetary boundary layer(PBL) and free atmosphere by fronts. From the three dimensional simulation of MM5, the amount of pollutants transport from PBL to free atmosphere is 48% within 18 hour after the development of front, 55% within 24 hour, and 53% within 30 hour. The ratios of the vertically transported pollutant for different seasons are 62%, 60%, 54%, and 43% for spring, summer, fall, and winter, respectively. The most active areas for the vertical transport are the center of low pressure and the warm sector located east side of cold front, in which the strong upward motion slanted northward occurs. The horizontal advection of pollutants at the upper level is stronger than at the lower level simply because of the stronger wind speed. The simulation results shows the well known plum shape distribution of pollutants. The high concentration area is located in the center and north of the low pressure system, while the second highest concentration area is in the warm sector. It is shown that the most important mechanism for the vertical transport is vertical advection, while the vertical diffusion process plays an important role in the redistribution of pollutants in the PBL.

• 센서학회지
• /
• 제4권4호
• /
• pp.10-15
• /
• 1995

유기 박막 electoluminescent(EL) 소자를 제작하여 전극의 일함수에 따른 출력휘도의 의존성과 휘도-전압 특성을 측정하였다. 제작된 소자의 구조는 Indium-Tin-Oxide(ITO)/정공수송층/발광층(전자수송층)/금속전극이며, 정공수송층으로는 PMMA+TPD(0.5wt%)와 측쇄 액정 고분자 메트릭스인 MC homopolymer+TPD(0.005wt%)와 (MC/MMA)copolymer+TPD(0.005wt%)을 사용하였으며, 발광층은 $Alq_{3}$을, 금속전극으로는 Ca, Mg, Mg:Ag(10:1) 와 Al을 사용하였다. 출력특성이 전압에 따른 정류특성을 가짐을 보였으며, 소자의 문턱전압은 5볼트이고, 출력 휘도는 10 볼트에서 700 $Cd/m^{2}$이상의 휘도를 보였다.