• Bulletin of the Korean Chemical Society
• /
• v.19 no.1
• /
• pp.107-109
• /
• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.59.2-59.2
• /
• 2011

We have demonstrated ink-jet printed indium tin oxide (ITO) and indium tin zinc oxide (IZTO) electrodes for cost-efficient organic solar cells (OSCs). By ink-jetting of crystalline ITO nano-particles and performing a rapid thermal anneal at $450^{\circ}C$, we were able to obtain directly patterned-ITO electrodes with an average transmittance of 84.14% and a sheet resistance of 202.7 Ohm/square without using a conventional photolithography process. The OSCs fabricated on the directly patterned ITO electrodes by ink-jet printing showed an open circuit voltage of 0.57 V, short circuit current of 8.47 mA/cm2, fill factor of 44%, and power conversion efficiency of 2.13%. This indicates that the ITO directly-patterned by ink-jet printing is a viable alternative to sputter-grown ITO electrodes for cost-efficient printing of OSCs due to the absence of a photolithography process for patterning and more efficient ITO material usage.

• Proceedings of the KIEE Conference
• /
• 2015.07a
• /
• pp.1155-1156
• /
• 2015

This study demonstrates hybrid-type transparent electrodes for touch screen panels. The hybrid-type electrodes were fabricated by coating carbon nanotubes (CNTs) on metal meshes. For the formation of metal meshes, thin films of silver (Ag) were deposited on glass substrates using a sputtering method and then pattenrned via photolithography to obtain mesh structures of which line width was $10{\mu}m$ and line-to-line spacing was $300{\mu}m$. CNTs were coated on Ag meshes by using electrophoretic deposition (EPD). For the samples of Ag meshes with/without CNTs, their surface morphologies, visible-range transmittances, and reflectances were characterized and compared. The experimental results indicated that the reflectance of Ag mesh electrodes was substantially reduced by coating of CNTs. Especially, the hybrid electrodes of Ag meshes with EPD-coated CNTs showed excellent properties such as transmittance higher than 90%, reflectance lower than 8%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.159-159
• /
• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.241.2-241.2
• /
• 2014

We present highly transparent liquid crystal displays (LCDs) using hybrid films based on carbon nanomaterials, metal grid, and indium-tin-oxide (ITO) grid. Carbon based nanomaterials are used as transparent electrodes because of high transmittance. Despite of their high transmittance they have relatively high sheet resistance. To solve this problem, we applied grid and made hybrid conductive films based on carbon nanomaterials. Conventional photolithography processes were used to make a grid pattern of metal and ITO. To fabricate transparent conductive films, carbon nanotube (CNT) ink was spin coated on the grid pattern. The transparency of the conductive film was controlled by shape and size of the grid pattern and the thickness of CNT films. The optical transmittance of CNT-based hybrid films is 92.2% and sheet resistance is also reduced to $168{\Omega}/square$. These substrates were used for the fabrication of typical twisted nematic (TN) LCD cells. From the characteristics of LCD devices such as transmittance, operating voltage, voltage holding ratio our devices were comparable to those of pristine ITO substrates. The result shows that the hybrid conductive films based on carbon nanomaterials could be alternative of ITO for the highly transparent LCDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.5
• /
• pp.439-444
• /
• 2022

Laser-induced plasmonic sintering of metal nanoparticles (NPs) is a promising technology to fabricate flexible conducting electrodes, since it provides instantaneous, simple, and scalable manufacturing strategies without requiring costly facilities and complex processes. However, the metal NPs are quite expensive because complicated synthesis procedures are needed to achieve long-term reliability with regard to chemical deterioration and NP aggregation. Herein, we report laser-induced Ag NP self-generation and sequential sintering process based on low-cost Ag organometallic material for demonstrating high-quality microelectrodes. Upon the irradiation of laser with 532 nm wavelength, pre-baked Ag organometallic film coated on a transparent polyimide substrate was transformed into a high-performance Ag conductor (resistivity of 2.2 × 10^-4 Ω·cm). To verify the practical usefulness of the technology, we successfully demonstrated a wearable transparent heater by using Ag-mesh transparent electrodes, which exhibited a high transmittance of 80% and low sheet resistance of 7 Ω/square.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.21-32
• /
• 2023

CuNWs(Copper nanowires) are attracting attention as a transparent electrode material because of their excellent electrical conductivity, high mechanical flexibility, and cost-effectiveness. However, since copper nanowires are easily oxidized, there is a disadvantage that properties of the transparent electrode may be deteriorated due to this, and researches are being conducted to improve this. Accordingly, in this review, various methods and studies to prevent oxidation and improve stability of copper nanowire transparent electrodes by using coating materials such as carbon-based materials, metals, and conductive polymers are introduced. Through this, we intend to provide solutions to solve the problem of development and oxidation of copper nanowire-based technology.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.05a
• /
• pp.96-96
• /
• 1998

• Korean Journal of Materials Research
• /
• v.21 no.7
• /
• pp.371-376
• /
• 2011

We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.276-276
• /
• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.