• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.82-86
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• 2024

With the growing field and growing interest in transparent organic light-emitting diodes (TOLED) in the industry, various attempts are being made to improve the transmittance and performance of TOLED. TOLEDs are expected to be used in next-generation displays such as mixture reality (MR) displays, displayable windows, televisions, etc. This study presents a mesh TOLED with better transmittance and luminescence characteristics than existing TOLEDs through an in-situ vacuum deposition method that does not require additional processes such as photolithography and etching. In this study the mesh TOLED's cathode consists of Mg: Ag 1:9 electrode. Mesh patterns are interconnected with a 6 nm layer of interlayer. We approached transmittance improvement up to 30% at 555 nm at the cathode electrode with similar current injection character, also we improved lumination characteristics up to 23% at 7 V driving condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).