• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Progress in Medical Physics
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• v.10 no.2
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• pp.63-71
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• 1999

For the purpose of utilization in 3-D conformal radiotherapy and whole body radiosurgery, the Whole Body 3-Dimensional Topographic Radiation Therapy System has been developed. Whole body frame was constructed in order to be installed on the couch. Radiopaque catheters were engraved on it for the dedicated coordinate system and a MeV-Green immobilizer was used for the patient setup by the help of side panels and plastic rods. By designing and constructing the whole body frame in this way, geometrical limitation to the gantry rotation in 3-D conformal radiotherapy could be minimized and problem which radiation transmission may be altered in particular incident angles was solved. By analyzing CT images containing information of patient setup with respect to the whole body frame, localization and coordination of the target is performed so that patient setup error may be eliminated between simulation and treatment. For the verification of setup, the change of patient positioning is detected and adjusted in order to minimize the setup error by means of comparison of the body outlines using 3 CCTV cameras. To enhance efficiency of treatment procedure, this work can be done in real time by watching the change of patient setup through the monitor. The method of image subtraction in IDL (Interactive Data Language) was used to visualize the change of patient setup. Rotating X-ray system was constructed for detecting target movement due to internal organ motion. Landmark screws were implanted either on the bones around target or inside target, and variation of target location with respect to markers may be visualized in order to minimize internal setup error through the anterior and the lateral image information taken from rotating X-ray system. For CT simulation, simulation software was developed using IDL on GUI(Graphic User Interface) basis for PC and includes functions of graphic handling, editing and data acquisition of images of internal organs as well as target for the preparation of treatment planning.

• Journal of Technology Innovation
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• v.26 no.3
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• pp.37-68
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• 2018

Since the 20th century, automobiles, which are the most common means of transportation, have been evolving as the use of electronic control devices and automotive semiconductors increases dramatically. Automotive semiconductors are a key component in automotive electronic control devices and are used to provide stability, efficiency of fuel use, and stability of operation to consumers. For example, automotive semiconductors include engines control, technologies for managing electric motors, transmission control units, hybrid vehicle control, start/stop systems, electronic motor control, automotive radar and LIDAR, smart head lamps, head-up displays, lane keeping systems. As such, semiconductors are being applied to almost all electronic control devices that make up an automobile, and they are creating more effects than simply combining mechanical devices. Since automotive semiconductors have a high data rate basically, a microprocessor unit is being used instead of a micro control unit. For example, semiconductors based on ARM processors are being used in telematics, audio/video multi-medias and navigation. Automotive semiconductors require characteristics such as high reliability, durability and long-term supply, considering the period of use of the automobile for more than 10 years. The reliability of automotive semiconductors is directly linked to the safety of automobiles. The semiconductor industry uses JEDEC and AEC standards to evaluate the reliability of automotive semiconductors. In addition, the life expectancy of the product is estimated at the early stage of development and at the early stage of mass production by using the reliability test method and results that are presented as standard in the automobile industry. However, there are limitations in predicting the failure rate caused by various parameters such as customer's various conditions of use and usage time. To overcome these limitations, much research has been done in academia and industry. Among them, researches using data mining techniques have been carried out in many semiconductor fields, but application and research on automotive semiconductors have not yet been studied. In this regard, this study investigates the relationship between data generated during semiconductor assembly and package test process by using data mining technique, and uses data mining technique suitable for predicting potential failure rate using customer bad data.

• Progress in Medical Physics
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• v.20 no.1
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• pp.37-42
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• 2009

Proton therapy facility, which is recently installed at National Cancer Center in Korea, generally produces a large amount of radiation near cyclotron due to the secondary particles and radioisotopes caused by collision between proton and nearby materials during the acceleration. Although the level of radiation by radioisotope decreases in length of time, radiation exposure problem still exists since workers are easily exposed by a low level of radiation for a long time due to their job assignment for maintenance or repair of the proton facility. In this paper, the working environment near cyclotron, where the highest radiation exposure is expected, was studied by measuring the degree of radiation and its duration for an appropriate level of protective action guide. To do this, we measured the radiation change in the graphite based energy degrader, the efficiency of transmitted beam and relative activation degree of the transmission beam line. The results showed that while the level of radiation exposure around cyclotron and beam line during the operation is much higher than the other radiation therapy facilities, the radiation exposure rate per year is under the limit recommended by the law showing 1~3 mSv/year.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.90-90
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• 2014

The Immersion Grating Infrared Spectrometer (IGRINS) is the first astronomical spectrograph that uses a silicon immersion grating as its dispersive element. IGRINS fully covers the H and K band atmospheric transmission windows in a single exposure. It is a compact high-resolution cross-dispersion spectrometer whose resolving power R is 40,000. An individual volume phase holographic grating serves as a secondary dispersing element for each of the H and K spectrograph arms. On the 2.7m Harlan J. Smith telescope at the McDonald Observatory, the slit size is $1^{{\prime}{\prime}}{\times}15^{{\prime}{\prime}}$. IGRINS has a plate scale of 0.27" pixel-1 on a $2048{\times}2048$ pixel Teledyne Scientific & Imaging HAWAII-2RG detector with a SIDECAR ASIC cryogenic controller. The instrument includes four subsystems; a calibration unit, an input relay optics module, a slit-viewing camera, and nearly identical H and K spectrograph modules. The use of a silicon immersion grating and a compact white pupil design allows the spectrograph collimated beam size to be 25mm, which permits the entire cryogenic system to be contained in a moderately sized ($0.96m{\times}0.6m{\times}0.38m$) rectangular Dewar. The fabrication and assembly of the optical and mechanical components were completed in 2013. From January to July of this year, we completed the system optical alignment and carried out commissioning observations on three runs to improve the efficiency of the instrument software and hardware. We describe the major design characteristics of the instrument including the system requirements and the technical strategy to meet them. We also present the instrumental performance test results derived from the commissioning runs at the McDonald Observatory.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12C
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• pp.1173-1183
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• 2006

In this paper, we propose an efficient method for improving visual quality of AR-FGS (Adaptive Reference FGS) which is adopted as a key scheme for SVC (Scalable Video Coding) or H.264 scalable extension. The standard FGS (Fine Granularity Scalability) adopts AR-FGS that introduces temporal prediction into FGS layer by using a high quality reference signal which is constructed by the weighted average between the base layer reconstructed imageand enhancement reference to improve the coding efficiency in the FGS layer. However, when the enhancement stream is truncated at certain bitstream position in transmission, the rest of the data of the FGS layer will not be available at the FGS decoder. Thus the most noticeable problem of using the enhancement layer in prediction is the degraded visual quality caused by drifting because of the mismatch between the reference frame used by the FGS encoder and that by the decoder. To solve this problem, we exploit the principle of cyclical block coding that is used to encode quantized transform coefficients in a cyclical manner in the FGS layer. Encoding block coefficients in a cyclical manner places 'higher-value' bits earlier in the bitstream. The quantized transform coefficients included in the ealry coding cycle of cyclical block coding have higher probability to be correctly received and decoded than the others included in the later cycle of the cyclical block coding. Therefore, we can minimize visual quality degradation caused by bitstream truncation by adjusting weighting factor to control the contribution of the bitstream produced in each coding cycle of cyclical block coding when constructing the enhancement layer reference frame. It is shown by simulations that the improved AR-FGS scheme outperforms the standard AR-FGS by about 1 dB in maximum in the reconstructed visual quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.3-9
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• 2017

Recently, in 3rd Generation Partnership Project(3GPP), there is a study of the Long Term Evolution(LTE) based vehicle communication which has been actively conducted to provide a transport efficiency, telematics and infortainment. Because the vehicle communication is closely related to the safety, it requires a reliable communication. Because vehicle speed is very fast, unlike the movement of the user, radio channel is rapidly changed and generate a number of problems such as transmission quality degradation. Therefore, we have to continuously updates the channel estimates. There are five types of conventional channel estimation scheme. Least Square(LS) is obtained by pilot symbol which is known to transmitter and receiver. Decision Directed Channel Estimation(DDCE) scheme uses the data signal for channel estimation. Constructed Data Pilot(CDP) scheme uses the correlation characteristic between adjacent two data symbols. Spectral Temporal Averaging(STA) scheme uses the frequency-time domain average of the channel. Smoothing scheme reduces the peak error value of data decision. In this paper, we propose the novel channel estimation scheme in LTE based Vehicle-to-Vehicle(V2V) environment. In our Hybrid Reliable Channel Estimation(HRCE) scheme, DDCE and Smoothing schemes are combined and finally the Linear Minimum Mean Square Error(LMMSE) scheme is applied to minimize the channel estimation error. Therefore it is possible to detect the reliable data. In simulation results, overall performance can be improved in terms of Normalized Mean Square Error(NMSE) and Bit Error Rate(BER).

• Journal of the Korean Society of Radiology
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• v.11 no.7
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• pp.547-553
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• 2017

In the current medical field, lead is widely used as a radiation shield. However, the lead weight is very heavy, so wearing protective clothing such as apron is difficult to wear for long periods of time and there is a problem with the danger of lethal toxicity in humans. Recently, many studies have been conducted to develop substitute materials of lead to resolve these problems. As a substitute materials for lead, barium(Ba) and iodine(I) have excellent shielding ability. But, It has characteristics emitting characteristic X-rays from the energy area near 30 keV. For patients or radiation workers, shielding materials is often made into contact with the human body. Therefore, the characteristic X-rays generated by the shielding material are directly exposured in the human body, which increases the risk of increasing radiation absorbed dose. In this study, we have developed the FLUKA transport code, one of the most suitable elements of radiation transport codes, to remove the characteristic X-rays generated by barium or iodine. We have verified the reliability of the shielding fraction of the structure of the structure shielding by comparing with the MCPDX simulations conducted as a prior study. Using the MCNPX and FLUKA, the double layer shielding structures with the various thickness combination consisting of barium sulphate ($BaSO_4$) and bismuth oxide($Bi_2O_3$) are designed. The accuracy of the type shown in IEC 61331-1 was geometrically identical to the simulation. In addition, the transmission spectrum and absorbed dose of the shielding material for the successive x-rays of 120 kVp spectra were compared with lead. In results, $0.3mm-BaSO_4/0.3mm-Bi_2O_3$ and $0.1mm-BaSO_4/0.5mm-Bi_2O_3$ structures have been absorbed in both 33 keV and 37 keV characteristic X-rays. In addition, for high-energy X-rays greater than 90 keV, the shielding efficiency was shown close to lead. Also, the transport code of the FLUKA's photon transport code was showed cut-off on low-energy X-rays(below 33keV) and is limited to computerized X-rays of the low-energy X-rays. But, In high-energy areas above 40 keV, the relative error with MCNPX was found to be highly reliable within 6 %.

• Journal of Korean Ophthalmic Optics Society
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• v.18 no.3
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• pp.231-239
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• 2013

Purpose: To design and fabricate the auto pattern maker for the development. Methods: we got the necessary data, needed in design, by using CAD. Based on the these data, we fabricated the trial product for the development of the auto pattern maker. Results: The auto pattern maker were composed with combinations of many elements; pattern making assembly, control panel, frame attachment and prober unit. The pattern making assembly was comprised of the cutter, the pattern holder, pattern remover and silence cover which could minimize the sound during the cutting process. The control panel was designed to be connected and operated with the main printed circuit board. The prober could get the eye shape data by scanning of 1.8 degrees around the groove of the frame through the encoding data according to the address. After starting, scanning was carried out in two passes, i.e. one right-handed and one left-handed. Communication connector could send the eye shape data from auto pattern maker to outer system with the RS232C transmission system. By using the one-way analysis of variance, we got the error rate of cut pattern size for ${\Phi}22mm$, ${\Phi}55mm$ and ${\Phi}62mm$. Because F-value was 0.510 and p-value was 0.601, no statistically significant differences were found. Also, the mean cutting error of the auto pattern maker was 0.0274 mm. Conclusions: we could succeed in making the trial product by applying it to the development of the auto pattern maker. The role of this auto pattern maker is to find a exact required size of lens to fit the frame by measuring the frame. The acquired data are transferred to outer system for grinding and finishing with patternless process. Also, the trial product can produce pattern to fit the frame. Therefore, it was confidently expected that the optometrists could handily produce pattern to fit the frame with this trial product and dispense the ophthalmic lens because of its efficiency and convenience compared to the past.