• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 춘계학술대회 논문집
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• pp.186-189
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• 2004

Although magnesium has high potential for structural material due to the lightweight and high specific strength, the structural application has been limited by the low ductility at room temperature. The reason of the poor ductility is few activated slip systems of magnesium (HCP structure) during deformation. As temperature increases, however, additional non-basal slip systems are incorporated to exhibit higher ductility comparable to aluminum. In the present study, a series of tensile tests of Mg-Al alloy has been carried out to study deformation behavior with temperature variation. Analysis of load relaxation test results based on internal variable approach gave information about relationship between the micromechanical character and corresponding deformation behavior of magnesium. Especially, the material parameter, p representing dislocation permeability through barriers was altered from 0.1 to 0.15 as the non-basal slip systems were activated at high temperature.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.204-205
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• 2009

The magnetic properties and structure of FeRh thin film pitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380K. Both M-T curve and d-spacing changes correspond to each other very closely.

• 한국세라믹학회지
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• 제24권6호
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• pp.527-536
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• 1987

PLZT ceramics of composition La/Zr/Ti=X/65/35(X=5-10 at.%) were fabricated by two state sintering technique.Transparent PLZT ceramics were obtained in the composition above 8 at. % La. Variations of electrooptic properties in the compositions between 8 at. % and 9 at. % La were able to be expected from the significant differences of P-E hysteresis curve and the changes of dielectric phase transition. The range of birefringence of 8/65/35 specimen was 4.08${\times}$10-3. Domain switching of 9/65/35 specimen was agreed with the applied electric pulse because input pulse signal corresponds to optical pulse response.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• 제4권3호
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• pp.165-171
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• 2000

Experiments were carried out to measure variations in the oxidation potential and current density using the polarization curves of polycarbonate. The results were then examined to identify the influences affecting the oxidation potential related to various conditions, such as temperature, pH, and oxydase(citrate and lipase). The lines representing the active anodic and cathodic dissolution shifted only slightly in the potential direction relative to temperature, pH, and the effect of the enzyme. The Tafel slope for the anodic and cathodic dissolution was determined such that the reversibility polarization was indicated as being effected by various conditions. The slope of the polarization curves describing the active-to-passive transition region shifted noticeably in their direction. Also, by varying the conditions, the optimum conditions for the most ready transform were identified, including temperature, pH, oxidation rate, and resistance of oxidation potential. The critical oxidation sensitivity(I(sub)r/I(sub)f) of the anodic current density peak and maximum passive current density was also determined, which is used in measuring the critical corrosion sensitivity of a polycarbonate.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 1997년도 가을 학술발표회 논문집
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• pp.527-532
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• 1997

Design strength of structural members could be determined by applying a strength reduction factor to nominal strength. At the beginning point of the transition region for the strength reduction factor, P=0.1$\sigma$$_{ck}A_g$, only sectional area and concrete strength are adopted as the variables of P=0.1$\sigma$$_{ck}A_g$. Therefore, P=0.1$\sigma$$_{ck}A_g$ is the empirically adopted which does not consider steel ratio, steel yielding stress, and steel arrangement. So, this research was perpormed the computer program for the analysis of axial force-moment-curvature relationship of reinforced concrete columns by sectional behaviour nonlinear analysis using a concrete compressive stress-strain curve, in order to investigate the ductility of reinforced concrete columns. As a result, ductility indicies of axial force, P=0.1$\sigma$$_{ck}A_g$, represented the lack of consistency of the indicies value for the various sections.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.20-20
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• 2002

• 센서학회지
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• 제21권5호
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

• 전기의세계
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• 제23권6호
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.583-588
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• 2004

We stabilized the frequency and power of a high voltage excited CW CO2 laser on the peak of the Doppler broadened gain curve using the photoacoustic effect generated from the laser itself. The photoacoustic signal is directly coupled from an radio frequency discharge chamber via a capacitor microphone into a detector and a lock-in stabilizer. The frequency stability is estimated to be better then 1.2×10/sup -7/ at the transition P(20) line. The stabilized output power variation was reduced to from 77 % to 3.3 %.