• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.274-274
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• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Journal of Institute of Convergence Technology
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• v.10 no.1
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• pp.13-17
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• 2020

Among the factors that must be taken into account when using thermal imaging cameras that are expanding their application to various fields, a basic study was conducted focusing on temperature on the effect of solar radiation on the photographed thermal image. Through all experiments, in order to use an image taken with a thermal imaging camera for an object installed or located outdoors, a separate temperature correction according to the size of solar radiation or a separate device to block the effect of solar radiation must be additionally installed. Since the temperature of the same object may vary in the thermal image taken indoors or outdoors, it is necessary to calibrate it through comparison with other temperatures as a reference point. In the case of measuring the temperature of a glossy surface such as metal indoors with a thermal imaging camera, it was confirmed that an environment that can remove the light reflection effect by the glossy surface must be constructed and photographed.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1101-1104
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• 2005

As intelligence of robot is developed, consumer of robot changes by ordinary people. Intelligent service robot is produced to a target of ordinary people. It is risen that need the most service robot business. Among the control mobile robot because using network by real time. Do to appear on mobile phone LCD screen being transmitted image from device that acquire transmit of mobile phone user interface development and real time mobile robot in this study. Use the BREW that is Qualcomm's Mobile platform for mobile phone user interface development. Mobile phone JPEG compression function chooses excellent camera phone and display transmit image which send connection setting screen and mobile robot on LCD screen by real time. At the same time, materialize to make screen that can process button input that can control transfer of robot. Also, Relay Server used to help processing of protocol to control direction of mobile robot.

• Journal of IKEEE
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• v.16 no.3
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• pp.265-273
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• 2012

Data stability and leakage power dissipation have become a critical issue in scaled SRAM design. In this paper, an advanced 8T SRAM cell improving the read and write stability of data storage elements as well as reducing the leakage current in the idle mode is presented. During the read operation, the bit-cell keeps the noise-vulnerable data 'low' node voltage close to the ground level, and thus producing near-ideal voltage transfer characteristics essential for robust read functionality. In the write operation, a negative bias on the cell facilitates to change the contents of the bit. Unlike the conventional 6T cell, there is no conflicting read and write requirement on sizing the transistors. In the standby mode, the built-in stacked device in the 8T cell reduces the leakage current significantly. The 8T SRAM cell implemented in a 130 nm CMOS technology demonstrates almost 100 % higher read stability while bearing 20 % better write-ability at 1.2 V typical condition, and a reduction by 45 % in leakage power consumption compared to the standard 6T cell. The stability enhancement and leakage power reduction provided with the proposed bit-cell are confirmed under process, voltage and temperature variations.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1769-1776
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• 2016

For on-line partial discharge (PD) monitoring of rotating machines, a novel sensor is proposed, which can be installed on the power lead inside the terminal box of the machine. The sensor has been designed to have high capacitance, and minimal reflection of measured pulses. As a sensitivity of the sensor, transfer impedance $Z_t$ has been measured and compared to conventional coupler-type sensors. A simple method is presented for measuring $Z_t$ of coupler sensors, using a vector network analyzer and a practical lead-cable of rotating machine. Through this method, it became possible to measure the $Z_t$ of coupler sensors including the installation environment of them. The $Z_t$ of the proposed sensor is higher than that of same sized other conventional couplers at frequencies between 30 and 92 MHz. Another sensitivity test has been performed using a PD calibrator as a test pulse source. The proposed sensor has higher measured peak voltage than the conventional coupler type sensors when the same charges were input.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.46 no.4
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• pp.93-100
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• 2014

The packaging with environment-friendly materials become more important issue since the concern for the environment and the disposal of waste such as the packaging materials has increased. Although the paper based packaging such as corrugated box are widely used as a typical environment-friendly packaging stuff, the heat insulation properties of paper packaging did not get many attention. In this study, the heat insulation properties of paper were deeply evaluated to improve the functional properties as packaging material of the cold storage goods. The simple device for evaluating the heat insulation of paper product was developed. Subsequently, the changes in the heat insulation depending on the paper structure and the addition of the inorganic fillers were investigated by using the instrument. The higher basis weight and the less beating time resulted in the bulkier structure and the less efficiency of heat transfer. The addition of the perlite powder as a filler resulted in the great increase in the heat insulation, although the addition of the calcium carbonate decreased the heat insulation potential of paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.688-691
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• 2004

In this study, we synthesized a new red emitting material of a Red225 doped into $Alq_3$ (tris(8-quinolinolato)aluminum (III)) and fabricated white organic light-emitting diodes (OLEDs) with a simple device structure. With a blue emitting material of DPVBi (4,4'-bis(2,2'-diphenylvinyl)1,1'-biphenyl) that can transfer effectively both a hole and an electron, OLEDs with a narrow emission layer could be possible without a hole-blocking layer. Consequently, the driving voltage and stability of devices have been improved. The devices show the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.35) at luminance of 2000 cd/$m^2$. The luminous efficiency is about 3.5 cd/A, luminance is about 12000 cd/$m^2$ and current density is about 350 mA/$cm^2$ at 12 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.401-401
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• 2009

Recently, demands for the development of compact, lightweight power supplies with higher power density and higher efficiency have been increased. Since Piezoelectric Transformer (PT) was emerged in device and material industry, it has been suggested as a viable alternative to the magnetic transformer in some applications. PT has some advantages such as low profile and mechanical energy transfer with little electromagnetic interface (EMI). Also, PT can provide high voltage stepping ratio with good isolation and requires no copper windings saving copper usage especially for large voltage conversion differences. Conventional control of PT converter has mainly two-way. One is the pulse frequency modulation (PFM) control method and the other is the pulse width modulation (PWM) control with frequency fixed method. It is known that the maximum PT efficiency can be obtained when it operates near the resonant frequency of the PT. And, also PT's resonant frequency moves according to the load condition. Therefore, selection of PT converter control method is very difficult. This paper analyzes general piezo-electric converter modeling and proposes a guide-line to selection of control method and stabilization control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.417-417
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• 2009

Although a transparent conductive film (TCF) belongs to essential supporting materials for many device applications such as touch screens, flat panel displays, and sensors, a conventional transparent conductive material, indium-tin oxide (ITO), suffers from considerable drawback because the price of indium has soared since 2001. Despite a recent falloff, a demand of ITO is expected to increase sharply in the future due to the trend of flat panel display technologies toward flexible, paper-like features. There have been recently extensive studies to replace ITO with new materials, in particular, carbon nanotubes (CNTs) since CNTs possess excellent properties such as flexibility, electrical conductivity, optical transparency, mechanical strength, etc., which are prerequisite to TCFs. This study fabricated TCFs with single-walled carbon nanotubes (SWCNTs) produced by arc discharge. The SWCNTs were dispersed in water with a surfactant of sodium dodecyl benzene sulfonate (NaDDBS) under sonication. Carbon black and fullerene nanoparticles were added to the SWCNT-dispersed solution to enhance contact resistance between CNTs. TCFs were manufactured by a filtration and transfer method. TCFs added with carbon black and fullerene nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy (optical transmittance), and four-point probe measurement (sheet resistance).