• Bulletin of the Korean Chemical Society
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• v.20 no.9
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• pp.1031-1034
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• 1999

Tin oxide films have been grown employing the chemical vapor deposition technique under reduced pressure conditions using tetramethyltin as the precursor and oxygen as the oxidant. An activation energy derived for the deposition reaction under representative deposition conditions has a value of 89±3 kJ mol-1, suggesting a typical kinetic control. Deposition rates of tin oxide films exhibit a near first order dependence on tetramethyltin partial pressure and a zeroth order dependence on oxygen partial pressure. This study provides the first quantitative information about the growth kinetics of tin oxide films from tetramethyltin by the cold-wall low-pressure chemical vapor deposition.

• Journal of Powder Materials
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• v.9 no.1
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• pp.32-37
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• 2002

In the present study of IGC (Inert Gas Condensation) evaporation-condensation processing study, the effects of IGC convection gas on the crystallographic structure, size and shape of tin oxide nanoparticles were investigated. In addition, the phase transformation of tin oxide nanoparticles was studied after heat treatment. IGC processing was conducted at 1000℃ for 1 hr. The mixture gas of oxygen and helium was used as a convection gas. Metastable tetragonal SnO nanoparticles were obtained at a lower convection gas pressure, whereas amorphous tin oxide nanoparticles were obtained at a higher one. The formation of amorphous phase could be explained by the rapid quenching of the vaporized atoms. The resultant nanoparticles size was about 10 nm with a rounded shape. The tin oxide nanoparticles prepared by IGC were almost transformed to the stable tetragonal SnO₂ after heat treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of Electrochemical Science and Technology
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• v.8 no.1
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• pp.69-76
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• 2017

Crystallization of one-dimensional porous tin oxide during the anodic oxidation of tin at ambient temperatures is reported. Remarkable crystallinity is achieved when a substrate with a high elastic modulus (e.g., silicon) is used and the tin coating on it is very thin. It is suggested that the compressive stress applied to the anodic tin oxide during the anodization process is the key factor affecting the degree of crystallinity. The measured value of the stress generated during anodization matches well with the range of the most favorable theoretical pressure (stress) for crystallization.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.505-510
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• 2012

A study of the recovery of tin and nickel from steel ball scraps for barrel plating was carried out through a physical treatment, a leaching treatment, hydrogen reduction and an electrolysis experiment. The recovery of the iron component was over 95% by the physical treatment. We obtained tin oxide in the form of metastannic acid ($SnO_2{\cdot}xH_2O$) with impurities of less than 5% from the leaching treatment. We also recovered the high-purity metallurgical tin at a rate that exceeded 99.9% by the electrolysis of crude tin obtained from the hydrogen reduction of metastannic acid.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.663-670
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• 2014

Diameter-controlled tin oxide nanofibers have been successfully prepared using electrospinning and a subsequent calcination process; their diameters, morphologies, and crystal structures have been characterized. The diameters of the as-spun nanofibers can be decreased by lowering the concentration of a polymer and a tin precursor in the electrospinning solution because of the decrease in the solution viscosity. The crystal structure of the nanofibers calcined at various temperatures from $200^{\circ}C$ to $800^{\circ}C$ has been proved to be the tetragonal rutile of tin oxide; crystallinity is improved by increasing the temperature. However, nanofibers with lower concentrations of tin precursor do not maintain their fibrous structures after calcination at high temperatures. In this study, the effect of the relationship between the precursor concentration and the calcination temperature on the diameter and the morphology of the tin oxide nanofiber has been systematically investigated and discussed.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.2013-2014
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• 2011

Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.