• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.159-159
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• 2010

본 논문은 테라헤르츠 소스로 저온 InGaAs를 대체하기 위한 저온 $In_{0.64}Al_{0.36}Sb$의 실리콘(Si) 도핑 농도에 따른 광학적 특성 변화를 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. $In_{0.64}Al_{0.36}Sb$ 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 약 $420^{\circ}C$에서 $3.7\;{\mu}m$ 두께 성장하였다. Si은 $In_{0.64}Al_{0.36}Sb$ 시료에서 도핑 농도가 낮을 때는 어셉터(acceptor)로 작용하다가 도핑 농도가 증가함에 따라 도너(donor)로 작용하였다. 본 연구에 사용한 $In_{0.64}Al_{0.36}Sb$ 시료의 Si 도핑 농도는 $4.5{\times}10^{16}\;cm^{-3}$ (n형), $4{\times}10^{16}\;cm^{-3}$ (n형), $8{\times}10^{15}\;cm^{-3}$ (n형), $1{\times}10^{15}\;cm^{-3}$ (p형), $4{\times}10^{14}\;cm^{-3}$ (p형)인 다섯 개의 시료를 사용하였다. Si 도핑한 시료의 PL 피크는 undoped 시료보다 약 100-200 nm 단파장에서 나타나고 PL 세기도 크게 증가하였다. 그러나 Si 도핑 농도가 가장 낮은 n형과 p형 시료의 PL 피크가 가장 짧은 파장 (높은 에너지)에 나타나고 도핑 농도가 증가함에 따라 장파장으로 이동함을 보였다. n형 시료의 도핑 농도가 $8{\times}10^{15}\;cm^{-3}$에서 $4.5{\times}10^{16}\;cm^{-3}$로 증가하였을 때 PL 피크는 1232 nm에서 1288 nm까지 장파장쪽으로 이동하였으며, p형 시료는 도핑 농도가 $4{\times}10^{14}\;cm^{-3}$에서 $1{\times}10^{15}\;cm^{-3}$로 증가하였을 때 PL 피크가 1248 nm에서 1314 nm로 이동함을 보였다. 또한 시료 온도에 따른 PL 결과는 온도가 증가함에 따라 PL 피크는 장파장으로 이동하면서 PL 세기는 급격하게 감소하고 약 100 - 150 K에서 소멸하였다. 그러나 ~1500 nm 이상 장파장 영역에 매우 넓은 새로운 피크가 나타났으며 온도가 증가함에 따라 PL 세기가 증가함을 확인하였다. Si 도핑 농도에 따른 운반자 수명시간 변화를 TRPL을 이용하여 측정하였다. 운반자 수명시간은 double exponential function을 이용하여 얻었다. Si 도핑 시료의 운반자 수명시간이 undoped 시료에 비해 매우 길게 나타났으며, Si 도핑 시료에서는 p형 시료들보다 n형 시료들의 운반자 수명시간이 길게 나타났다. PL 방출파장에 따른 운반자 수명시간은 Si 도핑 농도에 따라 다르게 나타났다. 이러한 PL과 TRPL 결과로부터 $In_{0.64}Al_{0.36}Sb$의 발광 특성 및 운반자 동역학은 Si 도핑에 크게 영향을 받는다는 것을 확인하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.81-84
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• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.49-54
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• 2016

$SrAl_{12}O_{19}:Ce_x{^{3+}}$,$Eu_{0.01}{^{2+}}$ phosphors were synthesized through a combustion process and their optical properties were investigated using time-resolved photoluminescence. A PL spectrum showed two dominant peaks which appeared at 300 and 410 nm. It is seen that, as the $Ce^{3+}$ concentration increases, the intensity of 300 nm decreases and the intensity of 410 nm increases. This behavior has been explained by two independent energy transfer mechanism. The first energy transfer occurs from $Ce^{3+}$ ion to $Eu^{3+}$ ion. The second energy transfer takes place from $Ce^{3+}$ ion to $Ce^{3+}-O_{ME}$ complex created in the magnetoplumbite structural host materials. The blue emitting 410 nm peak has been explained by both energy transfer mechanisms.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.218-221
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• 2011

We modified the optical properties of the $CuInS_2$ nanocrystal (NC) by alloying. Nanocrystals (NCs) with alloyed cores were synthesized by refluxing the as-synthesized $CuInS_2$ NCs with a mixture of cadmium acetate, zinc acetate and palmitic acid. The shift in emission wavelength of the NCs after shell layer formation was minimized by alloying. The photoluminescence (PL) spectra showed significant reduction of emission intensity. A detailed study on the emission process of NCs implies that the formation of shell layers with small lattice mismatch minimized the mismatch strain generated from the shell layers in contrast to core alloyed NCs. In particular, time-resolved PL spectra of the NCs showed a significant increase in the lifetime of excited carriers by modifying the band alignment of the NCs by modifying the shell composition.

• Journal of KIISE:Software and Applications
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• v.26 no.8
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• pp.955-963
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• 1999

다단계 보안 실시간 데이타베이스 시스템은 데이타베이스의 일관성 유지와 실시간 요구인 마감시간의 만족, 그리고 기밀성을 띤 데이타가 노출될 수 있는 비밀채널(covert-channel)의 방지라는 요구사항을 모두 만족해야 한다. 기존의 SRT-2PL(Secure Real-Time 2 Phase Locking)은 원본과 복사본으로 데이타 객체를 분리시켜 다른 등급간에 불간섭(non-interference)을 유지하여 비밀채널의 방지를 가능하게 하였으나, 복사본이 모든 데이타 객체에 대해 항상 존재하므로 메모리의 낭비가 있을 수 있고, 복사본의 갱신을 위한 갱신 큐의 관리에 따르는 오버헤드와 그에 따른 예측성 결여라는 문제점을 갖고 있다. 이를 개선하기 위하여 본 논문에서는 다단계 보안 실시간 데이타베이스 시스템의 요구사항을 모두 만족하는 동적 복사 프로토콜을 제안한다. 동적 복사 프로토콜은 로킹 기법을 기초로 동작하고, 트랜잭션의 작업에 따라 동적으로 복사본을 생성하고 삭제한다. 모의 실험 결과 제안한 동적 복사 프로토콜은 비밀채널을 방지하고 동적인 복사본의 생성으로 SRT-2PL의 단점인 메모리 낭비를 줄일 수 있으며, 예측성을 높여 마감시간 오류율을 감소시켰다.Abstract Concurrency control of real-time secure database system must satisfy not only logical data consistency but also timing constraints and security requirements associated with transactions. These conflicting natures between timing constraints and security requirements are often resolved by maintaining several versions(or secondary copies) on the same data items. In this paper, we propose a new lock-based concurrency control protocol, Dynamic Copy Security Protocol, ensuring both two conflicting requirements. Our protocol aims for reducing the storage overhead of maintaining secondary copies and minimizing the processing overhead of update history. Main idea of our protocol is to keep a secondary copy only when it is needed to resolve the conflicting read/write operations in real time secure database systems. For doing this, a secondary copy is dynamically created and removed during a transaction's read/write operations according to our protocol. We have also examined the performance characteristics of our protocol through simulation under different workloads while comparing the existing real time security protocol. The results show that our protocol consumed less storage and decreased the missing deadline transactions.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.373-373
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• 2013

높은 효율의 InGaN/GaN 전광소자는 현대 조명 산업에 필수적인 역할을 하고 있다. 그러나 전광소자의 효율을 높이는 데에는 여러가지 한계들이 있다. 예를 들면 높은 전류에서의 효율저하, GaN 의 전위결함에 의한 비발광 재결합의 발생 등이 있다. 이러한 한계를 극복하고자 InGaN/GaN 전광소자의 효율을 높이기 위해 사파이어 기판의 표면을 거칠게 바꾸는 방법, 무분극 전광소자, 표면 플라즈몬 등 여러가지 많은 방법들이 개발되고 있다. c-plane InGaN/GaN LED 기반의 표면 플라즈몬 실험은 많은 연구가 수행되고 있으나, m-plane InGaN/GaN LED 기반의 표면 플라즈몬은 아직 연구가 진행되지 않았다. 본 실험의 목적은 표면 플라즈몬 효과를 이용하여 semi-polar InGaN/GaN LED의 광효율을 개선하는 것이다. 유기금속화학 증착 장비로 m-plane sapphire위에 $6{\mu}m$ 의 GaN 버퍼층을 증착하고 표면의 평탄화를 위해 $2{\mu}m$의 n-GaN을 증착하였다. 그 위에 3개의 다중양자우물 층을 증착하였고, 10 nm의 도핑이 되지않은 GaN를 증착하였다. 표면 플라즈몬 현상을 일으키기 위해 Ag박막을 10, 15, 20 nm 증착하여 급속 열처리 방법으로 $300^{\circ}C$에서 20분 열처리 하였다. 형성된 나노입자를 측정하기 위해 주사전자현미경으로 표면을 분석하였다. 표면플라즈몬에 의한 InGaN/GaN 광 세기를 측정하고자 여기 파장이 385 nm인 photoluminescence (PL) 를 사용하였다. 또한 내부양자효과의 증가를 확인하기 위해 PL을 이용하여 온도를 10~300 K까지 20 K 간격으로 광세기를 측정하였다. 향상된 내부 양자효과가 표면 플라즈몬에 의한 것임을 증명하기 위해 time-resolved PL을 이용하여 운반자 수명시간을 구하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.762-767
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• 2001

We report the white light emission from the multilayer organic electroluminescent(EL) device using exciplex emission. The exciplex at 500nm originated between poly(N-vinylcarvazole)(PVK) and 2,5-bis(5'-tert-butyl-2-benzoxazoly)thiophene(BBOT) and exciplex of 50nm originated from N,N'-diphenyl-N,N'-(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) and BBOT were observed. Also, the energy transfer from PVK to BBOT and poly(3-hexylthiophene)(P3HT) in mixed emitting materials was occurred. The electroluminescence(EL) spectra of organic EL device which have a device structure of ITO/CuPc(5nm)/emitting layer(100nm)/BBOT(30nm)/LiF(1.4nm)/Al(200nm) were slightly changed as a function of the applied voltage. The luminance fo 12.3 ${\mu}$W/$\textrm{cm}^2$ was achieved at 20V and EL spectrum measured at 20V corresponds to Commission Internationale de L\`Eclairage(CIE) coordinates of x=0.29 and y=0.353.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.798-802
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• 2010

From time-resolved optical emission spectra, we have investigated the effects of a transverse magnetic field on the expansion of a plasma plume produced by laser ablation of a ZnO:$P_2O_5$ ceramic target in oxygen active atmosphere. The emission spectra of $Zn^{+*}$, $P^{+*}$, and $Zn^*$ neutrals in the presence of magnetic field turn out to be considerably different from those without magnetic field. The characteristics of the deposited films grown on amorphous fused silica substrates by pulsed laser deposition (PLD) are examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV-visible spectra.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.48-52
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• 2019

The blue emitting fluorescence of $SrAl_{12}O_{19}:Ce_{0.09}{^{3+}}$, $Eu_{0.01}{^{2+}}$ phosphor includes two kinds of independent energy transfer mechanism through electric multipole interactions between donor and acceptor ions. The first energy transfer takes place between the $Ce^{3+}$ ion and the $Eu^{2+}$ion which strongly depends on the concentration $Eu^{2+}$ions. The second energy transfer occurs between the $Ce^{3+}$ ion and the $O_{Me}-Ce^{3+}$ complexes. Both energy transfer mechanisms of blue emitting peak at 410 nm were investigated by fitting of Gaussian functions. The result shows that the peak at 410 nm is two overlapping emissions originated by $Eu^{2+}$ions and $O_{Me}-Ce^{3+}$ complexes and as time elapses $Eu^{2+}$peak remains whereas $O_{Me}-Ce^{3+}$ related peak disappears.