• Journal of Environmental Science International
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• v.21 no.2
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• pp.241-251
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• 2012

The emissions of several air pollutants ($NO_x$, CO, VOCs, etc.) for the replacement of all diesel buses by Compressed Natural Gas (CNG) buses were estimated in the Busan Metropolitan Area (BMA). These emissions were calculated from emission factors considering the different driving speeds with bus routes, distance traveled, and deterioration factors. For the purpose of this study, three categories of fuel type were selected: (1) the combination of diesel (65%) and CNG buses (35%) (DSL+CNG case), (2) all diesel buses (DSL case), and (3) all CNG buses (CNG case). The emissions of $NO_x$ and CO in the CNG case were estimated to be significant decreases (by about 50% and 98%, respectively) relative to the DSL case. Conversely, the emission of VOCs (980.7 ton/year) in the CNG case were a factor of 3.3 higher than that (299.8 ton/year) in the DSL case. In addition, the diurnal variations of emissions between two city buses (e.g. diesel and CNG) and all other vehicles were distinctly different because the two city buses operate at a regular time interval. Our overall results suggest the possibility that the pollutant emissions from the CNG buses can exert less influence on air quality in the target area than those from the diesel buses.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.5
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• pp.43-50
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• 2002

To improve the current waveform of diode rectifiers, we propose a new operating principle for the voltage -doubler diode rectifiers. In the conventional voltage-doubler rectifier circuit, relatively large capacitors are used to boost the output voltage, while the proposed circuit uses smaller ones and a small reactor not to boost the output voltage but improve the input current waveform. A high input power factor of 97[%] and an efficiency of 98[%] are also obtained. The harmonic guide lines of proposed rectifier is no interfered with inverter switching, resulting in a simple, reliable and low-cost ac-to dc converters in comparison with the boost-type current-improving circuits.It compared conventional pulse-widthmodulated(PWM)inverter with half pulse-widthmodulated (HPWM) inverter. Proposed HPWM inverter eliminated dead-time by lowering switchingloss and holding over-shooting.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.347-348
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• 2013

To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.1028-1036
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• 2008

In the OFDM system, IQ imbalance problem happens at the RF front-end of transceiver, which degrades the BER(bit error rate) performance because it affects the constellation in the received signal. Also, phase noise is generated in the local oscillator of transceivers and it destroys the orthogonality between the subcarriers. Conventional PNS algorithm is effective for phase noise suppression, but it is not useful anymore when there are jointly IQ(In-phase and Quadrature) imbalance and phase noise. Therefore, in this paper, we analyze the effect of IQ imbalance and phase noise generated in the down-conversion of the receiver. Then, we estimate and compensate the IQ imbalance and phase noise at the same time. Compared with the conventional method that IQ imbalance after IFFT is estimated and compensated in front of FFT via the feedback, this proposed method extracts and compensates effect of IQ imbalance after FFT stage. In case IQ imbalance and phase noise exist at the same time, we can decrease complexity because it is needless to use elimination of IQ imbalance in time domain and training sequences and preambles. Also, this method shows that it reduces the ICI and CPE component using adaptive forgetting factor of MMSE after FFT.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.159-159
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• 2016

Vertically-aligned carbon nanotubes (VCNT) have attracted much attention due to their unique structural, mechanical and electronic properties, and possess many advantages for a wide range of multifunctional applications such as field emission displays, heat dissipation and potential energy conversion devices. Surface modification of the VCNT plays a fundamental role to meet specific demands for the applications and control their surface property. Recent studies have been focused on the improvement of the electron emission property and the structural modification of CNTs to enable the mass fabrication, since the VCNT considered as an ideal candidate for various field emission applications such as lamps and flat panel display devices, X-ray tubes, vacuum gauges, and microwave amplifiers. Here, we investigate the effect of surface morphology of the VCNT by water vapor exposure and coating materials on field emission property. VCNT with various height were prepared by thermal chemical vapor deposition: short-length around $200{\mu}m$, medium-length around $500{\mu}m$, and long-length around 1 mm. The surface morphology is modified by water vapor exposure by adjusting exposure time and temperature with ranges from 2 to 10 min and from 60 to 120oC, respectively. Thin films of SiO2 and W are coated on the structure-modified VCNT to confirm the effect of coated materials on field emission properties. As a result, the surface morphology of VCNT dramatically changes with increasing temperature and exposure time. Especially, the shorter VCNT change their surface morphology most rapidly. The difference of field emission property depending on the coating materials is discussed from the point of work function and field concentration factor based on Fowler-Nordheim tunneling.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.282-287
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• 2019

The photovoltaic properties of $TiO_2$ used for the electron transport layer in perovskite solar cells(PSCs) are compared according to the particle size. The PSCs are fabricated and prepared by employing 20 nm and 30 nm $TiO_2$ as well as a 1:1 mixture of these particles. To analyze the microstructure and pores of each $TiO_2$ layer, a field emission scanning electron microscope and the Brunauer-Emmett-Teller(BET) method are used. The absorbance and photovoltaic characteristic of the PSC device are examined over time using ultraviolet-visible-near-infrared spectroscopy and a solar simulator. The microstructural analysis shows that the $TiO_2$ shape and layer thicknesses are all similar, and the BET analysis results demonstrate that the size of $TiO_2$ and in surface pore size is very small. The results of the photovoltaic characterization show that the mean absorbance is similar, in a range of about 400-800 nm. However, the device employing 30 nm $TiO_2$ demonstrates the highest energy conversion efficiency(ECE) of 15.07 %. Furthermore, it is determined that all the ECEs decrease over time for the devices employing the respective types of $TiO_2$. Such differences in ECE based on particle size are due to differences in fill factor, which changes because of changes in interfacial resistance during electron movement owing to differences in the $TiO_2$ particle size, which is explained by a one-dimensional model of the electron path through various $TiO_2$ particles.

• Korean Chemical Engineering Research
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• v.54 no.3
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• pp.299-304
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• 2016

Characteristics of self-propagating reaction for the preparation of ZnO powder from precursors composed of nitrate and citrate compounds were examined. The ratio of C/N was maintained in range of 0.7~0.8 to initiate the self-propagating reaction between the reducing citrate and oxidizing nitrate groups. The samples were decomposed thermally by using TGA. The sudden decomposition occurred in the range of X > 0.5 in a very short time with a very sharp decrease of mass, indicating that the self-propagating reaction would occur. Friedman, Ozawa-Flynn-Wall and Vyazovkin methods were employed to predict the activation energy, reaction order and frequency factor of the reaction rate in the rate determining step of X < 0.5 range. The activation energy increased with increasing fractional conversion in the range of 46~130 (kJ/min). The reaction order decreased in the range of 2.9~0.9, while the frequency factor increased in the range of 85~278 ($min^{-1}$), respectively, with increasing the rate of temperature increase.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Solar Energy
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• v.10 no.3
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• pp.60-65
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• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.