• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.1-7
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• 2002

We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

• Journal of Yeungnam Medical Science
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• v.1 no.1
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• pp.41-48
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• 1984

The soil bacterium Agrobacterium tumefaciens is a plant pathogen that cause3 crown gall tumors by infecting the wounded dicotyledonous plants and subsequent integration of bacterial DNA into plant nuclear DNA. Virulent A. tumefaciens strains harbor a large Ti (tumor-inducing) plasmid that carries genes essential for tumorigenesis. In the present study, 13 strains (Malus pumila Mill; $A_{1-3}$, Populus monilifera; $W_{1-6}$, Populus tomentiglandlosa; $P_{1-3}$ and Rosa species; $R_1$) of Agrobacterium isolated in korean crown gall tumors and plasmids were observed in 6 strains ($W_2$, $W_3$, $W_6$, $P_1$, $P_3$ and $A_2$). The test for crown gall tumor formation was resulted only in ATCC15955 and $KW_2$ strains inoculated into the stem of sun flower and the development was observed for 4 and 6 weeks after inoculation. Above two Ti plasmids (pTi) were purified by cesium chloride-ethidium bromide density gradient centrifugation and digested with restriction enzyme and fragments of pTiATCC 15955 and $pTiKW_2$ observed by EcoR I ; 25&27, Hind III; 23&21, BamH I ; each 20 and Hpa I ; 12&27, and sizes of pTiATCC15955 and and $pTiKW_2$ calculated as 200 and 87 kbases. Octopine was isolated from tumor tissue ($W_{1-6}$ and $P_{1-3}$) and these strains confirmed as octopine type.

• Journal of radiological science and technology
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• v.26 no.3
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• pp.19-24
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• 2003

We carried out studies on development and characteristic of ultrasound brast training biopsy phantom. the major finding were of follow ; (1) C type TMM was shown good homogeneity, brightness and attenuation as like human soft tissue. (2) $TiO_2$ 4.10%w/v TMM was shown good homogeneous echo texture and propagated speed as like the human Tissue. (3) $TiO_2$ type TMM was appeared lower brightness and higher penetration rate than C type TMM. Therefor, Breast TM phantom and target material TMM will be useful $TiO_2$ 4.10 %w/v TMM and C 2.09 %w/v TMM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.378-383
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• 2004

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.3981-3986
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• 2012

Anatase nanocrystalline and its tungsten-doped (0.4, 2, and 4 mol %) powders have been synthesized by microwave irradiation through hydrolysis of titanium tetra-isopropoxide (TIP) in aqueous solution. The materials are characterized by XRD, Raman, SEM-EDX, TEM, FT-IR and UV-vis techniques. The nanocrystalline $TiO_2$ particles are 30 nm in nature and doping of tungsten ion decreases their size. As seen in TEM images, the crystallites of W (4 mol %) doped $TiO_2$ are small with a size of about 10 nm. The photocatalytic activity was tested on the degradation of 4-nitrophenol (4-NP). Catalytic activities of W-doped and pure $TiO_2$ were also compared. The results show that the photocatalytic activity of the W-doped $TiO_2$ photocatalyst is much higher than that of pure $TiO_2$. Degradation decreases from 96 to 50%, during 115 min, when the initial 4-NP concentration increases from 10 to 120 ppm. Maximum degradation was obtained at 35 mg of photocatalyst.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.1-8
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• 1997

The surface properties after plasma etching of TiW alloy using the chemistries of BCl$_{3}$ and SF$_{6}$ gases with varying mixing ratio have been investigated using XPS(X-ray photoelectron spectrocopy). The elements existed on the etched sampled have been extracted with BCL$_{3}$/SF$_{6}$ ratio and their chemical binding states have also been analysed. It was confirmed that the thickness of native oxide formed on the TiW films is thinner than 10nm by using Ar sputtering. At the same time, the roughness of etched surface has been esamnied using AFM (atomic force microscopy). on the basis of the basis of this results, the relations between the caanges of oxygen contents detected by XPS and the rouhness of etched surface have been discussed. And the etch rate and etched profile of Tiw films have been examined and the changes of the etch rate and etched prfile have been discussed with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound has been proposed. Ti-S compound seems to make a role of passivation layer that surpresses Ti-O formation.ion.