• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.31.1-31.1
• /
• 2009

In an approach to acclimate ourselves torecent ecological consciousness trend, a lead-free piezoelectric material, bismuth sodium titanate (abbreviated as BNT) based bismuth sodium barium titanate (abbreviated as BNT-BT), was considered as an environment-friendly alternative for a lead based piezoelectric system. Ceramic specimens of0.94[(BixNa0.5)TiO3]-0.06[BaTiO3] (x = 0.500~0.515) compositions were prepared by a modified mixed oxide method. To increase the chemical homogeneity andre action activity, high energy mechanical milling machine and pre-milled nanosized powder has been used. In this method (BixNa0.5)TiO3 (x=0.500~0.515) andBaTiO3 were prepared separately from pre-milled constituent materials at low calcination temperature and then separately prepared BNTX (X=1, 2, 3 and 4) and BT were mixed by high energy mechanical milling machine. Without further calcination step the mixed powders were pressed into disk shape and sintered at $1110^{\circ}C$. Microstructures, phase structures and electrical properties of the ceramic specimens were systematically investigated. Highly dense ceramic specimens with homogenous grains were prepared in spite of relatively low sintering temperature. Phase structures were not significantly influenced by the excess amount Bi. Large variation on the piezoelectric and dielectric properties was detected at relative high excess Bi amounts. When $x{\leq}0.505$, the specimens exhibit insignificant variation in piezoelectric and dielectric constant though depolarization temperature is found to be decreased. Considerable amount of decrease in piezoelectric and dielectric properties are observed with higher excess of Bi amounts ($x{\geq}0.505$). This research indicates the advantages of high energy mechanical milling and importance of proper maintenance of Bi stoichiometry.

• Korean Journal of Materials Research
• /
• v.17 no.1
• /
• pp.11-17
• /
• 2007

Turbulent in-situ mixing process is a new material process technology to get dispersed phase in nanometer size by controlling reaction of liquid/solid, liquid/gas, flow ana solidification speed simultaneously. In this study, mixing which is the key technology to this synthesis method was studied by computational fluid dynamics. For the simulation of mixing of liquid metal, static mixers investigated. Two inlets for different liquid metal meet ana merge like 'Y' shape tube having various shapes and radios of curve. The performance of mixer was evaluated with quantitative analysis with coefficient of variance of mass fraction. Also, detailed plots of intersection were presented to understand effect of mixer shape on mixing. The simulations show that the Reynolds number (Re) is the important factor to mixing and dispersion of $TiB_2$ particles. Mixer was designed according to the simulation, and $Cu-TiB_2$ nano composites were evaluated. $TiB_2$ nano particles were uniformly dispersed when Re was 1000, and cluster formation and reduction in volume fraction of $TiB_2$ were found at higher Re.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.189-189
• /
• 2008

Due to the environmental issue vast research is going on to replace the widely used lead contented piezoelectric materials. Bismuth sodium titanate (abbreviated as BNT) based bismuth sodium titanate-barium titanate (abbreviated as BNBT) ceramic was prepared by using modified method rather than conventional mixed oxide method. This modification was made to improve the properties of BNT based ceramic. In this procedure $BaTiO_3$ (abbreviated as BT) was prepared using conventional mixed oxide method. Analytical grade raw materials of $BaCO_3$ and $TiO_2$ were weighted and ball milled using ethanol medium. The mixed slurry was dried and sieved under 80 mesh. Then the powder was calcined at $1100^{\circ}C$ for 2 hours. This calcined BT powder was used in the preparation of BNBT. Stoichiometric amount of $Bi_2O_3$, $Na_2CO_3$, $TiO_2$ and BT were weighted and mixed by using ball mill. The used calcination temperature was $850^{\circ}C$ for 2 hours. Calcined powder was taken for another milling step. BNBT disks were pressed to 15 mm of diameter and then cold isostatical press (CIP) was used. Pressed samples were sintered at $1150^{\circ}C$ for 2 hours. The SEM microstructure analysis revealed that the grain shape of the sintered ceramic was polyhedral and grain boundary was well matched where as the sample prepared by conventional method showed irregular arrangement and grain boundary not well matched. And sintered density was better (5.78 g/cc) for the modified method. It was strongly observed that the properties of BNBT ceramic near MPB composition was found to be improved by the modified method compare to the conventional mixed oxide method. The piezoelectric constant dB of 177.33 pC/N, electromechanical coupling factor $k_p$ of 33.4%, dielectric constant $K_{33}^T$ of 688.237 and mechanical quality factor $Q_m$ of 109.37 was found.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.255-255
• /
• 2016

Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$와 $85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2003.10a
• /
• pp.87-87
• /
• 2003

• Korean Journal of Materials Research
• /
• v.27 no.8
• /
• pp.416-421
• /
• 2017

V-substituted $SrTiO_3$ thermoelectric oxide materials were fabricated by the conventional solid state reaction method. From X-ray diffraction pattern analysis, it can be clearly seen that almost every vanadium atom incorporated into the $SrTiO_3$ provided charge carriers. The electrical conductivity ${\sigma}$, Seebeck coefficient S, and thermal conductivity k were investigated in a high temperature regime above 1000 K. The addition of vanadium significantly reduced the thermal conductivity and enhanced the Seebeck coefficient, as well as the electrical conductivity, thus enhancing the ZT value. A maximum ZT value of 0.084 at 673 K was observed for the sample with 1.0 mole% of vanadium substitution. In this study, the reason for the enhanced thermoelectric properties via vanadium addition was also investigated.

• Journal of Hydrogen and New Energy
• /
• v.21 no.4
• /
• pp.264-270
• /
• 2010

Recently, the most promising methods for high purity hydrogen production are membranes separation such as polymer, metal, ceramic and composites. It is well known that Pd and Pd-alloys membranes have excellent properties for hydrogen separation. However, it has hydrogen embrittlement and high cost for practical applications. Therefore, most scientists have studied new materials instead of Pd and Pd-alloys. On the other hand, TiN powders are great in resistance to acids and chemically stable under high operating temperature. In order to get specimens for hydrogen permeation, the TiN powders synthesized were consolidated together with Co, Ni powders by hot press sintering (HPS). During the consolidation of powders at HPS, heating rate was 10 K/min and the pressure was 10 MPa. It was characterized by XRD, SEM. Also, we estimated the hydrogen permeability by Sievert's type hydrogen permeation membrane equipment.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.6
• /
• pp.258-261
• /
• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.180-180
• /
• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.209-209
• /
• 2008

$BaTiO_3$는 대표적인 강유전체 재료로서 적층형 세라믹 콘덴서 (MLCC), PTC thermistor, resonator 등 다양한 분야에서 사용되고 있다. $BaTiO_3$ 기본조성으로 하는 PTC 써미스터는 온도가 올라감에 따라 저황이 높아지는 특성을 가지고 있으며, 이러한 PTCR 특성은 작동되는 큐리온도에 따라 그 적용이 달라진다. PTCR 소자는 소결온도, 소결분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용해 PTCR 특성에 영향을 미치기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 하지만 우수한 특성을 지닌 PTCR 소자를 제조하기 위하여 새로운 조성개발이 이루어지고 있으며, 전기적 특성 개선, 재현성 확보, 제조원가 절감 등의 측면에서 새로운 공정개발이 이루어지고 있다. 본 연구에서는 Sm을 첨가한 $BaTiO_3$계 재료의 PTCR 특성에 미치는 Ti/Ba ratio 등의 변화에 따른 영향을 조사하고 공기 중과 환원분위기 중에서 소결된 시편의 차이점과 재산화 처리에 따른 PTC 특성에 미치는 영향을 R-T 측정으로 고찰하였다. 본 조성은 환원 분위기에서 소결할 경우 그 미세구조는 Ti/Ba ratio비가 높을 때 grain size가 커져 상온 비저항을 낮출 수 있었다. Sm 첨가로 상온 비저항값은 낮출 수 있었으나 공기 중에서 재산화 처리하더라도 jumping ratio$(R_{max}/R_{25^{\circ}C})$는 Ti/Ba ratio와 거의 무관한 것으로 분석되었다.