• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.312-316
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• 1998

ZnO- TiO$_2$, and Sn0$_2$ - Ti0$_2$ ceramic composites doped with TiO$_2$ were prepared and their electrical and 1000ppm CO gas sensing properties were investigated. The phases of samples were analyzed by XRD, and the microsturctures of the fractured surface of samples were observed by SEM. A carbon monoxide gas sensitivity was de¬fined as the ratio of the resistance in dry air atmosphere(R$drt air$) to the resistance in 1000ppm CO gas atmosphere(R$_co$) The CO gas sensitivity of Smol% Ti0$_2$-added ZnO decreased about 1.7 times compared to that of pure ZnO. On the other hand, the maximum CO gas sensitivity of Ti0$_2$-added SnO$_2$ increased about 2.5 times compared to that of pure SnO$_2$. Therefore, the CO gas sensitivies of SnO$_2$-TiO$_2$ composite were better than those of ZnO- Ti0$_2$ and the temper¬ature range showing the maximum sensitivity for Sn0$_2$-TiO$_2$ composite was lower than that for ZnO- Ti0$_2$.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.453-457
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• 2005

Piezoelectric properties of $Pb(Mn_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ ceramics were investigated with $Al_2O_3$ content $(0.0-1.0 wt\%)$. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with $Al_2O_3$, indicating the MPB (morphotropic phase boundary) composition of tetragonal structures. The highest sintered density of $7.8 g/cm^3$ was obtained for $0.2wt\%\;Al_2O_3-doped$ specimen. Grain size increased by doping $Al_2O_3$ up to $0.3 wt\%$, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping $Al_2O_3$ up to $0.2wt\%$, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in $O^{2-}$ ion sites and the substitution of $Al^{3+}$ ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.458.2-458.2
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• 2014

We have demonstrated that simple brush-painted Ti-doped $In_2O_3$(TIO) films can be used as a cost effective transparent anodes for organic solar cells (OSCs). We examined the RTA effects on the electrical, optical, and structural properties of the brush painted TIO electrodes. By the direct brushing of TIO nanoparticle ink and rapid thermal annealing (RTA), we can simply obtain TIO electrodes with a low sheet resistance of 28.25 Ohm/square and a high optical transmittance of 85.48% under atmospheric ambient conditions. Furthermore, improvements in the connectivity of the TIO nano-particles in the top region during the RTA process play an important role in reducing the resistivity of the brush-painted TIO anode. In particular, the brush painted TIO films showed a much higher mobility ($33.4cm^2/V-s$) than that of previously reported solution-process transparent oxide films ($1{\sim}5cm^2/V-s$) due to the effects of the Ti dopant with higher Lewis acid strength (3.06) and the reduced contact resistance of TIO nanoparticles. The OSCs fabricated on the brush-painted TIO films exhibited cell-performance with an open circuit voltage (Voc) of 0.61 V, shot circuit current (Jsc) of $7.90mA/cm^2$, fill factor (FF) of 61%, and power conversion efficiency (PCE) of 2.94%. This indicates that brush-painted TIO film is a promising cost-effective transparent electrode for printing-based OSCs with its simple process and high performance.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.259-259
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• 2011

염료감응형 태양전지(Dye-Sensitized Solar Cells:DSSC)는 환경 친화적이며, 저가의 공정에 대한 가능성으로 기존의 고가의 결정질 실리콘 태양전지의 경제적인 대안으로 각광을 받고 있다. 최근 염료감응형 태양전지는 투명 전도성 산화막(Transparent Conducting Oxide : TCO)으로 사용되는 Fluorine Tin Oxide (FTO)가 증착된 유리기판 위에 주로 제작된다. FTO는 낮은 비저항과 가시광선 영역에서 높은 투과도를 가지는 우수한 전기-광학적 특성을 갖지만, 비교적 공정이 까다로운 Chemical Vapor Deposition (CVD)법으로 제조하며, 전체 공정비용의 60%를 차지하는 높은 생산단가로 인해 현재 FTO를 대체할 재료개발 연구가 활발히 진행되고 있다. 그 중 ZnO (Zinc Oxide)는 우수한 전기-광학적 특성과 비교적 저렴한 가격으로 새로운 TCO로써 주목받고 있다. ZnO는 넓은 energy band gap (3.4 [eV])의 육방정계 울자이트(hexagonal wurtzite) 결정 구조를 가지는II-VI족 n형 반도체 물질이며, III족 금속원소인 Al, Ga 및 In 등의 불순물을 첨가하면 TCO로서 우수한 전기-광학적 특성과 안정성을 나타낸다. 이들 물질중 $Zn^{2+}$ (0.060 nm)의 이온반경과 유사한 $Ga^{2+}$0.062 nm) 이온이 ZnO의 격자반경을 최소화 시킬 수 있다는 장점으로 최근 주목 받고 있다. 하지만 Ga-doped ZnO (GZO)의 경우 DSC에 사용되는 루테늄 계열의 산성 염료 하에 장시간 두면 표면이 파괴되는 문제가 발생하며, $TiO_2$ paste를 Printing 후 열처리하는 과정에서도 박막의 파괴가 발생할 수 있다. 이를 방지하기 위해 $TiO_2$ Blocking Layer를 GZO 투명전극 위에 증착하였다. 또한, $TiO_2$ Blocking Layer를 적용한 GZO 박막을 전면전극으로 이용하여 DSC를 제작하여 효율을 확인하였다. 2wt%의 $Ga_2O_3$가 도핑된 ZnO 박막은 20mTorr 400$^{\circ}C$에서 Pulsed Laser Deposition (PLD)에 의해 성장되었고, $TiO_2$박막은 Ti 금속을 타겟으로 이용하여 30mTorr 400$^{\circ}C$에서 증착되었다. Scanning electron microscopy (FE-SEM)을 이용한 박막 분석 결과 $TiO_2$가 증착된 GZO 박막의 경우 표면 파괴가 일어나지 않았다. Solar Simulator을 이용하여 I-V특성 측정결과 상용 FTO를 사용한 DSC 수준의 효율을 나타내었다. 이에 따라 Pulsed Laser Deposition을 이용해 제작된 GZO 기판은 $TiO_2$ Blocking Layer를 이용하여 표면 파괴를 방지할 수 있었으며, 이는 향후 염료감응형 태양전지의 투명전극에 적용 가능 할 것으로 판단된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.150-150
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• 2003

• Journal of the Korean Solar Energy Society
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• v.23 no.4
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• pp.29-35
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• 2003

We studied the water splitting into $H_2$ and $O_2$ using two different semiconductor photo catalysts and redox mediator, mimicking the Z-scheme mechanism of the photosynthesis, $H_2$ evolution took place on a Pt-$SrTiO_2$ (Cr-Ta doped) photocatalyst using $I^-$ electron donor under the visible light irradiation. The Pt-$WO_3$ photocatalyst showed an excellent activity of the $O_2$ evolution using $IO_3^-$ electron acceptor under visible light. $H_2$ and $O_2$ gases evolved in the stoichiometric ratio($H_2/O_2$=2) under visible light using a mixture of the Pt-$WO_3$ and Pt-$SrTiO_3$ (Cr-Ta doped) suspended in NaI aqueous solution. We proposed a two-step photo-excitation mechanism using redox mediator under the visible irradiation.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.11
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• pp.1019-1024
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• 2009

Visible-light-active $TiO_2-_xN_x$ nanoparticles with a homogeneous anatase crystalline structure were successfully prepared through a hydrolysis of $TiCl_4$ with ammonia solution. The samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), $N_2$-sorption, and UV-vis diffuse reflectance spectra (DRS) techniques. The light absorption onset shifted from 390 nm on pure $TiO_2$ to the visible region at 530 nm on nitrogen-doped $TiO_2$. A clear decrease in the band gap was deduced from the DRS results. The photocatalytic activity was evaluated from the photodegradation of congo red solution under visible light irradiation. The photocatalyst showed the highest photocatalytic activity at an optimal value of nitrogen doping concentration. This was suggested that the nitrogen doping should have an important effects on the improvement of photocatalytic activity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.204-208
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• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.